Clean-Room lithographical processes for the fabrication of Graphene biosensors
Autor(a) principal: | |
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Data de Publicação: | 2020 |
Outros Autores: | , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/1822/69020 |
Resumo: | This work is on developing clean-room processes for the fabrication of electrolyte-gate graphene field-effect transistors at the wafer scale for biosensing applications. Our fabrication process overcomes two main issues: removing surface residues after graphene patterning and the dielectric passivation of metallic contacts. A graphene residue-free transfer process is achieved by using a pre-transfer, sacrificial metallic mask that protects the entire wafer except the areas around the channel, source, and drain, onto which the graphene film is transferred and later patterned. After the dissolution of the mask, clean gate electrodes are obtained. The multilayer SiO2/SiNx dielectric passivation takes advantage of the excellent adhesion of SiO2 to graphene and the substrate materials and the superior impermeability of SiNx. It hinders native nucleation centers and breaks the propagation of defects through the layers, protecting from prolonged exposition to all common solvents found in biochemistry work, contrary to commonly used polymeric passivation. Since wet etch does not allow the required level of control over the lithographic process, a reactive ion etching process using a sacrificial metallic stopping layer is developed and used for patterning the passivation layer. The process achieves devices with high reproducibility at the wafer scale. |
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Clean-Room lithographical processes for the fabrication of Graphene biosensorsGrapheneMicrofabricationBiosensorsDielectric passivationClean surfacesEngenharia e Tecnologia::Engenharia dos MateriaisEngenharia e Tecnologia::NanotecnologiaScience & TechnologyThis work is on developing clean-room processes for the fabrication of electrolyte-gate graphene field-effect transistors at the wafer scale for biosensing applications. Our fabrication process overcomes two main issues: removing surface residues after graphene patterning and the dielectric passivation of metallic contacts. A graphene residue-free transfer process is achieved by using a pre-transfer, sacrificial metallic mask that protects the entire wafer except the areas around the channel, source, and drain, onto which the graphene film is transferred and later patterned. After the dissolution of the mask, clean gate electrodes are obtained. The multilayer SiO2/SiNx dielectric passivation takes advantage of the excellent adhesion of SiO2 to graphene and the substrate materials and the superior impermeability of SiNx. It hinders native nucleation centers and breaks the propagation of defects through the layers, protecting from prolonged exposition to all common solvents found in biochemistry work, contrary to commonly used polymeric passivation. Since wet etch does not allow the required level of control over the lithographic process, a reactive ion etching process using a sacrificial metallic stopping layer is developed and used for patterning the passivation layer. The process achieves devices with high reproducibility at the wafer scale.Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Funding UIDB/04650/2020, UIDP/00013/2020, and Operational Program Competitiveness and Internationalization (POCI) under project POCI-01-0145-FEDER-031069 (PORTGRAPHE). This work was partially supported by E.U. Horizon 2020 Research and Innovation Programme, under project MULTIMAL (grant #777222). P.D. Cabral acknowledges the Ph.D. grant (SFRH/BD/128579/2017) from the FCTMDPIUniversidade do MinhoCabral, Patrícia D.Domingues, TelmaMachado, GeorgeChicharo, AlexandreCerqueira, M. F.Fernandes, ElisabeteAthayde, EmiliaAlpuim, P.Borme, Jérôme2020-122020-12-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/1822/69020eng1996-194410.3390/ma13245728https://www.mdpi.com/1996-1944/13/24/5728/htminfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T12:23:31Zoai:repositorium.sdum.uminho.pt:1822/69020Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T19:17:15.078170Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Clean-Room lithographical processes for the fabrication of Graphene biosensors |
title |
Clean-Room lithographical processes for the fabrication of Graphene biosensors |
spellingShingle |
Clean-Room lithographical processes for the fabrication of Graphene biosensors Cabral, Patrícia D. Graphene Microfabrication Biosensors Dielectric passivation Clean surfaces Engenharia e Tecnologia::Engenharia dos Materiais Engenharia e Tecnologia::Nanotecnologia Science & Technology |
title_short |
Clean-Room lithographical processes for the fabrication of Graphene biosensors |
title_full |
Clean-Room lithographical processes for the fabrication of Graphene biosensors |
title_fullStr |
Clean-Room lithographical processes for the fabrication of Graphene biosensors |
title_full_unstemmed |
Clean-Room lithographical processes for the fabrication of Graphene biosensors |
title_sort |
Clean-Room lithographical processes for the fabrication of Graphene biosensors |
author |
Cabral, Patrícia D. |
author_facet |
Cabral, Patrícia D. Domingues, Telma Machado, George Chicharo, Alexandre Cerqueira, M. F. Fernandes, Elisabete Athayde, Emilia Alpuim, P. Borme, Jérôme |
author_role |
author |
author2 |
Domingues, Telma Machado, George Chicharo, Alexandre Cerqueira, M. F. Fernandes, Elisabete Athayde, Emilia Alpuim, P. Borme, Jérôme |
author2_role |
author author author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade do Minho |
dc.contributor.author.fl_str_mv |
Cabral, Patrícia D. Domingues, Telma Machado, George Chicharo, Alexandre Cerqueira, M. F. Fernandes, Elisabete Athayde, Emilia Alpuim, P. Borme, Jérôme |
dc.subject.por.fl_str_mv |
Graphene Microfabrication Biosensors Dielectric passivation Clean surfaces Engenharia e Tecnologia::Engenharia dos Materiais Engenharia e Tecnologia::Nanotecnologia Science & Technology |
topic |
Graphene Microfabrication Biosensors Dielectric passivation Clean surfaces Engenharia e Tecnologia::Engenharia dos Materiais Engenharia e Tecnologia::Nanotecnologia Science & Technology |
description |
This work is on developing clean-room processes for the fabrication of electrolyte-gate graphene field-effect transistors at the wafer scale for biosensing applications. Our fabrication process overcomes two main issues: removing surface residues after graphene patterning and the dielectric passivation of metallic contacts. A graphene residue-free transfer process is achieved by using a pre-transfer, sacrificial metallic mask that protects the entire wafer except the areas around the channel, source, and drain, onto which the graphene film is transferred and later patterned. After the dissolution of the mask, clean gate electrodes are obtained. The multilayer SiO2/SiNx dielectric passivation takes advantage of the excellent adhesion of SiO2 to graphene and the substrate materials and the superior impermeability of SiNx. It hinders native nucleation centers and breaks the propagation of defects through the layers, protecting from prolonged exposition to all common solvents found in biochemistry work, contrary to commonly used polymeric passivation. Since wet etch does not allow the required level of control over the lithographic process, a reactive ion etching process using a sacrificial metallic stopping layer is developed and used for patterning the passivation layer. The process achieves devices with high reproducibility at the wafer scale. |
publishDate |
2020 |
dc.date.none.fl_str_mv |
2020-12 2020-12-01T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/1822/69020 |
url |
http://hdl.handle.net/1822/69020 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
1996-1944 10.3390/ma13245728 https://www.mdpi.com/1996-1944/13/24/5728/htm |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
MDPI |
publisher.none.fl_str_mv |
MDPI |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
instname_str |
Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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1799132624031055872 |