Etchability dependence of InOx and ITO thin films by plasma enhanced reactive termal evaporation on structural properties and deposition conditions
Autor(a) principal: | |
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Data de Publicação: | 2018 |
Outros Autores: | , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10400.21/8800 |
Resumo: | Indium oxide (InOx) and indium tin oxide (ITO) thin films were deposited on glass substrates by plasma enhanced reactive thermal evaporation (PERTE) at different substrate temperatures. The films were then submitted to two etching solutions with different chemical reactivity: i) HNO3 (6%), at room temperature; ii) HCl (35%): (40 °Be) FeCl3 (1:1), at 40 °C. The dependence of the etchability of the films on the structural and deposition conditions is discussed. Previously to etching, structural characterization was made. X-ray diffraction showed the appearance of a peak around 2θ=31° as the deposition temperature increases from room temperature to 190 °C, both for ITO and InOx. AFM surface topography and SEM micrographs of the deposited films are consistent with the structural properties suggested by X-ray spectra: as the deposition temperature increases, the surface changes from a finely grained structure to a material with a larger-sized grain or/and agglomerate structure of the order of 250-300 nm. The roughness Rq varies from 0.74 nm for the amorphous tissue to a maximum of 10.83 nm for the sample with the biggest crystalline grains. Raman spectra are also presented. |
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Etchability dependence of InOx and ITO thin films by plasma enhanced reactive termal evaporation on structural properties and deposition conditionsTransparent conductorThin filmPlasma depositionIndium oxide (InOx) and indium tin oxide (ITO) thin films were deposited on glass substrates by plasma enhanced reactive thermal evaporation (PERTE) at different substrate temperatures. The films were then submitted to two etching solutions with different chemical reactivity: i) HNO3 (6%), at room temperature; ii) HCl (35%): (40 °Be) FeCl3 (1:1), at 40 °C. The dependence of the etchability of the films on the structural and deposition conditions is discussed. Previously to etching, structural characterization was made. X-ray diffraction showed the appearance of a peak around 2θ=31° as the deposition temperature increases from room temperature to 190 °C, both for ITO and InOx. AFM surface topography and SEM micrographs of the deposited films are consistent with the structural properties suggested by X-ray spectra: as the deposition temperature increases, the surface changes from a finely grained structure to a material with a larger-sized grain or/and agglomerate structure of the order of 250-300 nm. The roughness Rq varies from 0.74 nm for the amorphous tissue to a maximum of 10.83 nm for the sample with the biggest crystalline grains. Raman spectra are also presented.Cambridge University PressRCIPLAmaral, AnaLavareda, GuilhermeCarvalho, Carlos Nunes deAndre, VaniaVygranenko, YuriFernandes, MiguelBrogueira, Pedro2018-08-29T09:40:15Z2018-01-302018-01-30T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10400.21/8800engAMARAL, Ana; [et al] – Etchability dependence of InOx and ITO thin films by plasma enhanced reactive termal evaporation on structural properties and deposition conditions. MRS Advances. ISSN 2059-8521. Vol. 3, N.º 4 (2018), pp. 207-2122059-8521https://doi.org/10.1557/adv.2018.113info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-08-03T09:56:43Zoai:repositorio.ipl.pt:10400.21/8800Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T20:17:30.818266Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Etchability dependence of InOx and ITO thin films by plasma enhanced reactive termal evaporation on structural properties and deposition conditions |
title |
Etchability dependence of InOx and ITO thin films by plasma enhanced reactive termal evaporation on structural properties and deposition conditions |
spellingShingle |
Etchability dependence of InOx and ITO thin films by plasma enhanced reactive termal evaporation on structural properties and deposition conditions Amaral, Ana Transparent conductor Thin film Plasma deposition |
title_short |
Etchability dependence of InOx and ITO thin films by plasma enhanced reactive termal evaporation on structural properties and deposition conditions |
title_full |
Etchability dependence of InOx and ITO thin films by plasma enhanced reactive termal evaporation on structural properties and deposition conditions |
title_fullStr |
Etchability dependence of InOx and ITO thin films by plasma enhanced reactive termal evaporation on structural properties and deposition conditions |
title_full_unstemmed |
Etchability dependence of InOx and ITO thin films by plasma enhanced reactive termal evaporation on structural properties and deposition conditions |
title_sort |
Etchability dependence of InOx and ITO thin films by plasma enhanced reactive termal evaporation on structural properties and deposition conditions |
author |
Amaral, Ana |
author_facet |
Amaral, Ana Lavareda, Guilherme Carvalho, Carlos Nunes de Andre, Vania Vygranenko, Yuri Fernandes, Miguel Brogueira, Pedro |
author_role |
author |
author2 |
Lavareda, Guilherme Carvalho, Carlos Nunes de Andre, Vania Vygranenko, Yuri Fernandes, Miguel Brogueira, Pedro |
author2_role |
author author author author author author |
dc.contributor.none.fl_str_mv |
RCIPL |
dc.contributor.author.fl_str_mv |
Amaral, Ana Lavareda, Guilherme Carvalho, Carlos Nunes de Andre, Vania Vygranenko, Yuri Fernandes, Miguel Brogueira, Pedro |
dc.subject.por.fl_str_mv |
Transparent conductor Thin film Plasma deposition |
topic |
Transparent conductor Thin film Plasma deposition |
description |
Indium oxide (InOx) and indium tin oxide (ITO) thin films were deposited on glass substrates by plasma enhanced reactive thermal evaporation (PERTE) at different substrate temperatures. The films were then submitted to two etching solutions with different chemical reactivity: i) HNO3 (6%), at room temperature; ii) HCl (35%): (40 °Be) FeCl3 (1:1), at 40 °C. The dependence of the etchability of the films on the structural and deposition conditions is discussed. Previously to etching, structural characterization was made. X-ray diffraction showed the appearance of a peak around 2θ=31° as the deposition temperature increases from room temperature to 190 °C, both for ITO and InOx. AFM surface topography and SEM micrographs of the deposited films are consistent with the structural properties suggested by X-ray spectra: as the deposition temperature increases, the surface changes from a finely grained structure to a material with a larger-sized grain or/and agglomerate structure of the order of 250-300 nm. The roughness Rq varies from 0.74 nm for the amorphous tissue to a maximum of 10.83 nm for the sample with the biggest crystalline grains. Raman spectra are also presented. |
publishDate |
2018 |
dc.date.none.fl_str_mv |
2018-08-29T09:40:15Z 2018-01-30 2018-01-30T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10400.21/8800 |
url |
http://hdl.handle.net/10400.21/8800 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
AMARAL, Ana; [et al] – Etchability dependence of InOx and ITO thin films by plasma enhanced reactive termal evaporation on structural properties and deposition conditions. MRS Advances. ISSN 2059-8521. Vol. 3, N.º 4 (2018), pp. 207-212 2059-8521 https://doi.org/10.1557/adv.2018.113 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
Cambridge University Press |
publisher.none.fl_str_mv |
Cambridge University Press |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
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1799133437541482496 |