Etchability Dependence of InO x and ITO Thin Films by Plasma Enhanced Reactive Thermal Evaporation on Structural Properties and Deposition Conditions

Detalhes bibliográficos
Autor(a) principal: Amaral, Ana
Data de Publicação: 2018
Outros Autores: Lavareda, G., Carvalho, C. Nunes de, André, V., Vygranenko, Yuri, Fernandes, M., Brogueira, Pedro
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: https://doi.org/10.1557/adv.2018.113
Resumo: The authors gratefully acknowledge T. Duarte for the X-ray diffraction facilities, "Fundacao para a Ciencia e a Tecnologia" for funding through a pluriannual contract with CeFEMA (UID/CTM/04540/2013) and fellowship (SFRH/BPD/102217/2014) for financial support of this research.
id RCAP_f3db3196ea893963f4fb7d68edccda92
oai_identifier_str oai:run.unl.pt:10362/66986
network_acronym_str RCAP
network_name_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository_id_str 7160
spelling Etchability Dependence of InO x and ITO Thin Films by Plasma Enhanced Reactive Thermal Evaporation on Structural Properties and Deposition Conditionsplasma depositionthin filmtransparent conductorMechanical EngineeringMechanics of MaterialsMaterials Science(all)Condensed Matter PhysicsThe authors gratefully acknowledge T. Duarte for the X-ray diffraction facilities, "Fundacao para a Ciencia e a Tecnologia" for funding through a pluriannual contract with CeFEMA (UID/CTM/04540/2013) and fellowship (SFRH/BPD/102217/2014) for financial support of this research.Indium oxide (InOx) and indium tin oxide (ITO) thin films were deposited on glass substrates by plasma enhanced reactive thermal evaporation (PERTE) at different substrate temperatures. The films were then submitted to two etching solutions with different chemical reactivity: I) HNO3 (6%), at room temperature; ii) HCl (35%): (40 °Bé) FeCl3 (1:1), at 40 °C. The dependence of the etchability of the films on the structural and deposition conditions is discussed. Previously to etching, structural characterization was made. X-ray diffraction showed the appearance of a peak around 2θ=31° as the deposition temperature increases from room temperature to 190 °C, both for ITO and InOx. AFM surface topography and SEM micrographs of the deposited films are consistent with the structural properties suggested by X-ray spectra: As the deposition temperature increases, the surface changes from a finely grained structure to a material with a larger-sized grain or/and agglomerate structure of the order of 250-300 nm. The roughness Rq varies from 0.74 nm for the amorphous tissue to a maximum of 10.83 nm for the sample with the biggest crystalline grains. Raman spectra are also presented.CTS - Centro de Tecnologia e SistemasDCM - Departamento de Ciência dos MateriaisUNINOVA-Instituto de Desenvolvimento de Novas TecnologiasRUNAmaral, AnaLavareda, G.Carvalho, C. Nunes deAndré, V.Vygranenko, YuriFernandes, M.Brogueira, Pedro2019-04-17T22:13:14Z2018-01-012018-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article6application/pdfhttps://doi.org/10.1557/adv.2018.113eng2059-8521PURE: 12726535http://www.scopus.com/inward/record.url?scp=85044181883&partnerID=8YFLogxKhttps://doi.org/10.1557/adv.2018.113info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T04:31:52Zoai:run.unl.pt:10362/66986Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:34:36.589239Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Etchability Dependence of InO x and ITO Thin Films by Plasma Enhanced Reactive Thermal Evaporation on Structural Properties and Deposition Conditions
title Etchability Dependence of InO x and ITO Thin Films by Plasma Enhanced Reactive Thermal Evaporation on Structural Properties and Deposition Conditions
spellingShingle Etchability Dependence of InO x and ITO Thin Films by Plasma Enhanced Reactive Thermal Evaporation on Structural Properties and Deposition Conditions
Amaral, Ana
plasma deposition
thin film
transparent conductor
Mechanical Engineering
Mechanics of Materials
Materials Science(all)
Condensed Matter Physics
title_short Etchability Dependence of InO x and ITO Thin Films by Plasma Enhanced Reactive Thermal Evaporation on Structural Properties and Deposition Conditions
title_full Etchability Dependence of InO x and ITO Thin Films by Plasma Enhanced Reactive Thermal Evaporation on Structural Properties and Deposition Conditions
title_fullStr Etchability Dependence of InO x and ITO Thin Films by Plasma Enhanced Reactive Thermal Evaporation on Structural Properties and Deposition Conditions
title_full_unstemmed Etchability Dependence of InO x and ITO Thin Films by Plasma Enhanced Reactive Thermal Evaporation on Structural Properties and Deposition Conditions
title_sort Etchability Dependence of InO x and ITO Thin Films by Plasma Enhanced Reactive Thermal Evaporation on Structural Properties and Deposition Conditions
author Amaral, Ana
author_facet Amaral, Ana
Lavareda, G.
Carvalho, C. Nunes de
André, V.
Vygranenko, Yuri
Fernandes, M.
Brogueira, Pedro
author_role author
author2 Lavareda, G.
Carvalho, C. Nunes de
André, V.
Vygranenko, Yuri
Fernandes, M.
Brogueira, Pedro
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv CTS - Centro de Tecnologia e Sistemas
DCM - Departamento de Ciência dos Materiais
UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias
RUN
dc.contributor.author.fl_str_mv Amaral, Ana
Lavareda, G.
Carvalho, C. Nunes de
André, V.
Vygranenko, Yuri
Fernandes, M.
Brogueira, Pedro
dc.subject.por.fl_str_mv plasma deposition
thin film
transparent conductor
Mechanical Engineering
Mechanics of Materials
Materials Science(all)
Condensed Matter Physics
topic plasma deposition
thin film
transparent conductor
Mechanical Engineering
Mechanics of Materials
Materials Science(all)
Condensed Matter Physics
description The authors gratefully acknowledge T. Duarte for the X-ray diffraction facilities, "Fundacao para a Ciencia e a Tecnologia" for funding through a pluriannual contract with CeFEMA (UID/CTM/04540/2013) and fellowship (SFRH/BPD/102217/2014) for financial support of this research.
publishDate 2018
dc.date.none.fl_str_mv 2018-01-01
2018-01-01T00:00:00Z
2019-04-17T22:13:14Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv https://doi.org/10.1557/adv.2018.113
url https://doi.org/10.1557/adv.2018.113
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2059-8521
PURE: 12726535
http://www.scopus.com/inward/record.url?scp=85044181883&partnerID=8YFLogxK
https://doi.org/10.1557/adv.2018.113
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 6
application/pdf
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv
_version_ 1799137968073474048

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