Theoretical study of c-GaN/GaAs single heterojunction solar cells
Autor(a) principal: | |
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Data de Publicação: | 2017 |
Outros Autores: | , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Matéria (Rio de Janeiro. Online) |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1517-70762017000400410 |
Resumo: | ABSTRACT In this work a theoretical study of electrical behavior for a c-GaN/GaAs heterostructure as a photovoltaic device through a two-dimensional (2D) finite element numerical simulation is presented for a first time. I-V curves and electrical parameters like short circuit current (Isc), open circuit voltage (Voc), fill factor (FF) and efficiency (η) were obtained for n-i-p and n-p heterostructures with different thicknesses and doping of the layers by modeling heterostructures with characteristics parameters of this materials previously reported. As a result, an increment on Isc was observed by extending the thickness of i-GaAs layer from 12 mA/cm2 for thinner heterostructures to a maximum of ~32 mA/cm2 for heterostructures with i-GaAs layer >3000 nm and a decrease in Voc and FF in the range from ~1.06 V and 0.89 for n-p heterostructures to 0.75 V and 0.7 respectively for thicker i-GaAs layers allowing estimate maximum efficiencies between 23 and 25% for n-i-p and n-p configurations, respectively. This study allows demonstrating the potential of this type of heterostructures for solar cells applications, considering the possibility of using p-doping GaAs substrates for photovoltaics based in GaN. |
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Theoretical study of c-GaN/GaAs single heterojunction solar cellsGaN/GaAsheterostructuresTCAD modelingI-V curvessolar cellABSTRACT In this work a theoretical study of electrical behavior for a c-GaN/GaAs heterostructure as a photovoltaic device through a two-dimensional (2D) finite element numerical simulation is presented for a first time. I-V curves and electrical parameters like short circuit current (Isc), open circuit voltage (Voc), fill factor (FF) and efficiency (η) were obtained for n-i-p and n-p heterostructures with different thicknesses and doping of the layers by modeling heterostructures with characteristics parameters of this materials previously reported. As a result, an increment on Isc was observed by extending the thickness of i-GaAs layer from 12 mA/cm2 for thinner heterostructures to a maximum of ~32 mA/cm2 for heterostructures with i-GaAs layer >3000 nm and a decrease in Voc and FF in the range from ~1.06 V and 0.89 for n-p heterostructures to 0.75 V and 0.7 respectively for thicker i-GaAs layers allowing estimate maximum efficiencies between 23 and 25% for n-i-p and n-p configurations, respectively. This study allows demonstrating the potential of this type of heterostructures for solar cells applications, considering the possibility of using p-doping GaAs substrates for photovoltaics based in GaN.Laboratório de Hidrogênio, Coppe - Universidade Federal do Rio de Janeiroem cooperação com a Associação Brasileira do Hidrogênio, ABH22017-01-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1517-70762017000400410Matéria (Rio de Janeiro) v.22 n.4 2017reponame:Matéria (Rio de Janeiro. Online)instname:Matéria (Rio de Janeiro. Online)instacron:RLAM10.1590/s1517-707620170004.0221info:eu-repo/semantics/openAccessCruz,Ana Gabriela GaliciaSolís,Mario DíazGonzález,Leandro GarcíaTorres,Julián HernándezLópez,Máximo LópezPuente,Gerardo ContrerasRodríguez,Guillermo SantanaPeredo,Luis Zamoraeng2017-10-02T00:00:00Zoai:scielo:S1517-70762017000400410Revistahttp://www.materia.coppe.ufrj.br/https://old.scielo.br/oai/scielo-oai.php||materia@labh2.coppe.ufrj.br1517-70761517-7076opendoar:2017-10-02T00:00Matéria (Rio de Janeiro. Online) - Matéria (Rio de Janeiro. Online)false |
dc.title.none.fl_str_mv |
Theoretical study of c-GaN/GaAs single heterojunction solar cells |
title |
Theoretical study of c-GaN/GaAs single heterojunction solar cells |
spellingShingle |
Theoretical study of c-GaN/GaAs single heterojunction solar cells Cruz,Ana Gabriela Galicia GaN/GaAs heterostructures TCAD modeling I-V curves solar cell |
title_short |
Theoretical study of c-GaN/GaAs single heterojunction solar cells |
title_full |
Theoretical study of c-GaN/GaAs single heterojunction solar cells |
title_fullStr |
Theoretical study of c-GaN/GaAs single heterojunction solar cells |
title_full_unstemmed |
Theoretical study of c-GaN/GaAs single heterojunction solar cells |
title_sort |
Theoretical study of c-GaN/GaAs single heterojunction solar cells |
author |
Cruz,Ana Gabriela Galicia |
author_facet |
Cruz,Ana Gabriela Galicia Solís,Mario Díaz González,Leandro García Torres,Julián Hernández López,Máximo López Puente,Gerardo Contreras Rodríguez,Guillermo Santana Peredo,Luis Zamora |
author_role |
author |
author2 |
Solís,Mario Díaz González,Leandro García Torres,Julián Hernández López,Máximo López Puente,Gerardo Contreras Rodríguez,Guillermo Santana Peredo,Luis Zamora |
author2_role |
author author author author author author author |
dc.contributor.author.fl_str_mv |
Cruz,Ana Gabriela Galicia Solís,Mario Díaz González,Leandro García Torres,Julián Hernández López,Máximo López Puente,Gerardo Contreras Rodríguez,Guillermo Santana Peredo,Luis Zamora |
dc.subject.por.fl_str_mv |
GaN/GaAs heterostructures TCAD modeling I-V curves solar cell |
topic |
GaN/GaAs heterostructures TCAD modeling I-V curves solar cell |
description |
ABSTRACT In this work a theoretical study of electrical behavior for a c-GaN/GaAs heterostructure as a photovoltaic device through a two-dimensional (2D) finite element numerical simulation is presented for a first time. I-V curves and electrical parameters like short circuit current (Isc), open circuit voltage (Voc), fill factor (FF) and efficiency (η) were obtained for n-i-p and n-p heterostructures with different thicknesses and doping of the layers by modeling heterostructures with characteristics parameters of this materials previously reported. As a result, an increment on Isc was observed by extending the thickness of i-GaAs layer from 12 mA/cm2 for thinner heterostructures to a maximum of ~32 mA/cm2 for heterostructures with i-GaAs layer >3000 nm and a decrease in Voc and FF in the range from ~1.06 V and 0.89 for n-p heterostructures to 0.75 V and 0.7 respectively for thicker i-GaAs layers allowing estimate maximum efficiencies between 23 and 25% for n-i-p and n-p configurations, respectively. This study allows demonstrating the potential of this type of heterostructures for solar cells applications, considering the possibility of using p-doping GaAs substrates for photovoltaics based in GaN. |
publishDate |
2017 |
dc.date.none.fl_str_mv |
2017-01-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1517-70762017000400410 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1517-70762017000400410 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/s1517-707620170004.0221 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
Laboratório de Hidrogênio, Coppe - Universidade Federal do Rio de Janeiro em cooperação com a Associação Brasileira do Hidrogênio, ABH2 |
publisher.none.fl_str_mv |
Laboratório de Hidrogênio, Coppe - Universidade Federal do Rio de Janeiro em cooperação com a Associação Brasileira do Hidrogênio, ABH2 |
dc.source.none.fl_str_mv |
Matéria (Rio de Janeiro) v.22 n.4 2017 reponame:Matéria (Rio de Janeiro. Online) instname:Matéria (Rio de Janeiro. Online) instacron:RLAM |
instname_str |
Matéria (Rio de Janeiro. Online) |
instacron_str |
RLAM |
institution |
RLAM |
reponame_str |
Matéria (Rio de Janeiro. Online) |
collection |
Matéria (Rio de Janeiro. Online) |
repository.name.fl_str_mv |
Matéria (Rio de Janeiro. Online) - Matéria (Rio de Janeiro. Online) |
repository.mail.fl_str_mv |
||materia@labh2.coppe.ufrj.br |
_version_ |
1752126689843871744 |