Optical and electrical properties of Te doped AlGaAsSb/AlAsSb Bragg mirrors on InP

Detalhes bibliográficos
Autor(a) principal: Toginho Filho,D. O.
Data de Publicação: 2006
Outros Autores: Dias,I. F. L., Duarte,J. L., Laureto,E.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000700023
Resumo: We present a comparative study carried out on the optical and electrical characteristics of undoped and Te doped AlGaAsSb/AlAsSb Bragg mirrors with 6.5 pairs of layers and bulk undoped and Te doped AlGaAsSb epilayers alloys lattice matched on InP, grown by molecular beam epitaxy, using SIMS, photoluminescence, reflectivity and IxV techniques. The temperature dependence of PL transitions observed in the Bragg mirrors are similar to that observed in bulk samples and associated with the donor and acceptor recombinations in alloys with electrostatic potential fluctuations described by quasi-donor-acceptor-pair (QDAP) models. We verified by SIMS the presence of a macro fluctuation in the Te profile concentrations in the growth direction of the doped Bragg mirror. The influence of doping, alloy and macrofluctuation of incorporated Te on the optical and electrical properties of doped Bragg mirror is analyzed. The AlGaAs/AlAsSb seems a very attractive option for VCSEL technology.
id SBF-2_008bbb1aeba7f548009ecef0dfd64740
oai_identifier_str oai:scielo:S0103-97332006000700023
network_acronym_str SBF-2
network_name_str Brazilian Journal of Physics
repository_id_str
spelling Optical and electrical properties of Te doped AlGaAsSb/AlAsSb Bragg mirrors on InPSemiconductorBragg mirrorAlGaAs/AlAsSbWe present a comparative study carried out on the optical and electrical characteristics of undoped and Te doped AlGaAsSb/AlAsSb Bragg mirrors with 6.5 pairs of layers and bulk undoped and Te doped AlGaAsSb epilayers alloys lattice matched on InP, grown by molecular beam epitaxy, using SIMS, photoluminescence, reflectivity and IxV techniques. The temperature dependence of PL transitions observed in the Bragg mirrors are similar to that observed in bulk samples and associated with the donor and acceptor recombinations in alloys with electrostatic potential fluctuations described by quasi-donor-acceptor-pair (QDAP) models. We verified by SIMS the presence of a macro fluctuation in the Te profile concentrations in the growth direction of the doped Bragg mirror. The influence of doping, alloy and macrofluctuation of incorporated Te on the optical and electrical properties of doped Bragg mirror is analyzed. The AlGaAs/AlAsSb seems a very attractive option for VCSEL technology.Sociedade Brasileira de Física2006-12-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000700023Brazilian Journal of Physics v.36 n.4a 2006reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332006000700023info:eu-repo/semantics/openAccessToginho Filho,D. O.Dias,I. F. L.Duarte,J. L.Laureto,E.eng2007-06-21T00:00:00Zoai:scielo:S0103-97332006000700023Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2007-06-21T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Optical and electrical properties of Te doped AlGaAsSb/AlAsSb Bragg mirrors on InP
title Optical and electrical properties of Te doped AlGaAsSb/AlAsSb Bragg mirrors on InP
spellingShingle Optical and electrical properties of Te doped AlGaAsSb/AlAsSb Bragg mirrors on InP
Toginho Filho,D. O.
Semiconductor
Bragg mirror
AlGaAs/AlAsSb
title_short Optical and electrical properties of Te doped AlGaAsSb/AlAsSb Bragg mirrors on InP
title_full Optical and electrical properties of Te doped AlGaAsSb/AlAsSb Bragg mirrors on InP
title_fullStr Optical and electrical properties of Te doped AlGaAsSb/AlAsSb Bragg mirrors on InP
title_full_unstemmed Optical and electrical properties of Te doped AlGaAsSb/AlAsSb Bragg mirrors on InP
title_sort Optical and electrical properties of Te doped AlGaAsSb/AlAsSb Bragg mirrors on InP
author Toginho Filho,D. O.
author_facet Toginho Filho,D. O.
Dias,I. F. L.
Duarte,J. L.
Laureto,E.
author_role author
author2 Dias,I. F. L.
Duarte,J. L.
Laureto,E.
author2_role author
author
author
dc.contributor.author.fl_str_mv Toginho Filho,D. O.
Dias,I. F. L.
Duarte,J. L.
Laureto,E.
dc.subject.por.fl_str_mv Semiconductor
Bragg mirror
AlGaAs/AlAsSb
topic Semiconductor
Bragg mirror
AlGaAs/AlAsSb
description We present a comparative study carried out on the optical and electrical characteristics of undoped and Te doped AlGaAsSb/AlAsSb Bragg mirrors with 6.5 pairs of layers and bulk undoped and Te doped AlGaAsSb epilayers alloys lattice matched on InP, grown by molecular beam epitaxy, using SIMS, photoluminescence, reflectivity and IxV techniques. The temperature dependence of PL transitions observed in the Bragg mirrors are similar to that observed in bulk samples and associated with the donor and acceptor recombinations in alloys with electrostatic potential fluctuations described by quasi-donor-acceptor-pair (QDAP) models. We verified by SIMS the presence of a macro fluctuation in the Te profile concentrations in the growth direction of the doped Bragg mirror. The influence of doping, alloy and macrofluctuation of incorporated Te on the optical and electrical properties of doped Bragg mirror is analyzed. The AlGaAs/AlAsSb seems a very attractive option for VCSEL technology.
publishDate 2006
dc.date.none.fl_str_mv 2006-12-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000700023
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000700023
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97332006000700023
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.36 n.4a 2006
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
_version_ 1754734863436480512

Registros relacionados