Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy

Detalhes bibliográficos
Autor(a) principal: Martins,M. R.
Data de Publicação: 2004
Outros Autores: Oliveira,J. B. B., Tabata,A., Laureto,E., Bettini,J., Meneses,E. A., Carvalho,M. M. G.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400022
Resumo: In this work we investigated the optical and structural properties of GaAs/GaInP quantum wells (QW) grown by Chemical Beam Epitaxy (CBE). The samples were characterized by photoluminescence (PL), photoluminescence excitation (PLE) and transmission electron microscopy (TEM). Simulations of the quantum well potential profiles, using the Van De Walle-Martin model, supplemented by our experimental results, allowed us to associate the interface properties with the growth procedures. We concluded that a thin GaP layer grown at the interface improves its quality and also that the observed broad emission band in the PL spectrum is related to quaternary Ga1-xIn xAs1-yPy.
id SBF-2_10e5286ca63ae7c9c8528dfc37aad0f0
oai_identifier_str oai:scielo:S0103-97332004000400022
network_acronym_str SBF-2
network_name_str Brazilian Journal of Physics
repository_id_str
spelling Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam EpitaxyIn this work we investigated the optical and structural properties of GaAs/GaInP quantum wells (QW) grown by Chemical Beam Epitaxy (CBE). The samples were characterized by photoluminescence (PL), photoluminescence excitation (PLE) and transmission electron microscopy (TEM). Simulations of the quantum well potential profiles, using the Van De Walle-Martin model, supplemented by our experimental results, allowed us to associate the interface properties with the growth procedures. We concluded that a thin GaP layer grown at the interface improves its quality and also that the observed broad emission band in the PL spectrum is related to quaternary Ga1-xIn xAs1-yPy.Sociedade Brasileira de Física2004-06-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400022Brazilian Journal of Physics v.34 n.2b 2004reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332004000400022info:eu-repo/semantics/openAccessMartins,M. R.Oliveira,J. B. B.Tabata,A.Laureto,E.Bettini,J.Meneses,E. A.Carvalho,M. M. G.eng2004-08-31T00:00:00Zoai:scielo:S0103-97332004000400022Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2004-08-31T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy
title Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy
spellingShingle Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy
Martins,M. R.
title_short Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy
title_full Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy
title_fullStr Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy
title_full_unstemmed Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy
title_sort Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy
author Martins,M. R.
author_facet Martins,M. R.
Oliveira,J. B. B.
Tabata,A.
Laureto,E.
Bettini,J.
Meneses,E. A.
Carvalho,M. M. G.
author_role author
author2 Oliveira,J. B. B.
Tabata,A.
Laureto,E.
Bettini,J.
Meneses,E. A.
Carvalho,M. M. G.
author2_role author
author
author
author
author
author
dc.contributor.author.fl_str_mv Martins,M. R.
Oliveira,J. B. B.
Tabata,A.
Laureto,E.
Bettini,J.
Meneses,E. A.
Carvalho,M. M. G.
description In this work we investigated the optical and structural properties of GaAs/GaInP quantum wells (QW) grown by Chemical Beam Epitaxy (CBE). The samples were characterized by photoluminescence (PL), photoluminescence excitation (PLE) and transmission electron microscopy (TEM). Simulations of the quantum well potential profiles, using the Van De Walle-Martin model, supplemented by our experimental results, allowed us to associate the interface properties with the growth procedures. We concluded that a thin GaP layer grown at the interface improves its quality and also that the observed broad emission band in the PL spectrum is related to quaternary Ga1-xIn xAs1-yPy.
publishDate 2004
dc.date.none.fl_str_mv 2004-06-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400022
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400022
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97332004000400022
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.34 n.2b 2004
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
_version_ 1754734861047824384

Registros relacionados