Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy
| Autor(a) principal: | |
|---|---|
| Data de Publicação: | 2004 |
| Outros Autores: | , , , , , |
| Tipo de documento: | Artigo |
| Idioma: | eng |
| Título da fonte: | Repositório Institucional da UNESP |
| Texto Completo: | http://dx.doi.org/10.1590/S0103-97332004000400022 http://hdl.handle.net/11449/29740 |
Resumo: | In this work we investigated the optical and structural properties of GaAs/GaInP quantum wells (QW) grown by Chemical Beam Epitaxy (CBE). The samples were characterized by photoluminescence (PL), photoluminescence excitation (PLE) and transmission electron microscopy (TEM). Simulations of the quantum well potential profiles, using the Van de Walle-Martin model, supplemented by our experimental results, allowed us to associate the interface properties with the growth procedures. We concluded that a thin GaP layer grown at the interface improves its quality and also that the observed broad emission band in the PL spectrum is related to quaternary Ga1-xIn xAs1-yPy. |
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Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam EpitaxyIn this work we investigated the optical and structural properties of GaAs/GaInP quantum wells (QW) grown by Chemical Beam Epitaxy (CBE). The samples were characterized by photoluminescence (PL), photoluminescence excitation (PLE) and transmission electron microscopy (TEM). Simulations of the quantum well potential profiles, using the Van de Walle-Martin model, supplemented by our experimental results, allowed us to associate the interface properties with the growth procedures. We concluded that a thin GaP layer grown at the interface improves its quality and also that the observed broad emission band in the PL spectrum is related to quaternary Ga1-xIn xAs1-yPy.Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação para o Desenvolvimento da UNESP (FUNDUNESP)Universidade Estadual Paulista - UNESP Departamento de FísicaUNICAMP Instituto de Física Gleb WathaginLaboratório Nacional de Luz Sincroton - LNLSUniversidade Estadual Paulista - UNESP Departamento de FísicaSociedade Brasileira de FísicaUniversidade Estadual Paulista (Unesp)Universidade Estadual de Campinas (UNICAMP)Laboratório Nacional de Luz Sincroton - LNLSMartins, M. R. [UNESP]Oliveira, José Brás Barreto de [UNESP]Tabata, Américo Sheitiro [UNESP]Laureto, E.Bettini, J.Meneses, E. A.Carvalho, M. M. G.2014-05-20T15:15:41Z2014-05-20T15:15:41Z2004-06-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article620-622application/pdfhttp://dx.doi.org/10.1590/S0103-97332004000400022Brazilian Journal of Physics. Sociedade Brasileira de Física, v. 34, n. 2b, p. 620-622, 2004.0103-9733http://hdl.handle.net/11449/2974010.1590/S0103-97332004000400022S0103-97332004000400022S0103-97332004000400022.pdf69774666987423119354064620643611SciELOreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengBrazilian Journal of Physics1.0820,276info:eu-repo/semantics/openAccess2024-04-25T17:40:00Zoai:repositorio.unesp.br:11449/29740Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T19:29:12.846411Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
| dc.title.none.fl_str_mv |
Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy |
| title |
Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy |
| spellingShingle |
Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy Martins, M. R. [UNESP] |
| title_short |
Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy |
| title_full |
Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy |
| title_fullStr |
Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy |
| title_full_unstemmed |
Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy |
| title_sort |
Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy |
| author |
Martins, M. R. [UNESP] |
| author_facet |
Martins, M. R. [UNESP] Oliveira, José Brás Barreto de [UNESP] Tabata, Américo Sheitiro [UNESP] Laureto, E. Bettini, J. Meneses, E. A. Carvalho, M. M. G. |
| author_role |
author |
| author2 |
Oliveira, José Brás Barreto de [UNESP] Tabata, Américo Sheitiro [UNESP] Laureto, E. Bettini, J. Meneses, E. A. Carvalho, M. M. G. |
| author2_role |
author author author author author author |
| dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) Universidade Estadual de Campinas (UNICAMP) Laboratório Nacional de Luz Sincroton - LNLS |
| dc.contributor.author.fl_str_mv |
Martins, M. R. [UNESP] Oliveira, José Brás Barreto de [UNESP] Tabata, Américo Sheitiro [UNESP] Laureto, E. Bettini, J. Meneses, E. A. Carvalho, M. M. G. |
| description |
In this work we investigated the optical and structural properties of GaAs/GaInP quantum wells (QW) grown by Chemical Beam Epitaxy (CBE). The samples were characterized by photoluminescence (PL), photoluminescence excitation (PLE) and transmission electron microscopy (TEM). Simulations of the quantum well potential profiles, using the Van de Walle-Martin model, supplemented by our experimental results, allowed us to associate the interface properties with the growth procedures. We concluded that a thin GaP layer grown at the interface improves its quality and also that the observed broad emission band in the PL spectrum is related to quaternary Ga1-xIn xAs1-yPy. |
| publishDate |
2004 |
| dc.date.none.fl_str_mv |
2004-06-01 2014-05-20T15:15:41Z 2014-05-20T15:15:41Z |
| dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
| dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
| format |
article |
| status_str |
publishedVersion |
| dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1590/S0103-97332004000400022 Brazilian Journal of Physics. Sociedade Brasileira de Física, v. 34, n. 2b, p. 620-622, 2004. 0103-9733 http://hdl.handle.net/11449/29740 10.1590/S0103-97332004000400022 S0103-97332004000400022 S0103-97332004000400022.pdf 6977466698742311 9354064620643611 |
| url |
http://dx.doi.org/10.1590/S0103-97332004000400022 http://hdl.handle.net/11449/29740 |
| identifier_str_mv |
Brazilian Journal of Physics. Sociedade Brasileira de Física, v. 34, n. 2b, p. 620-622, 2004. 0103-9733 10.1590/S0103-97332004000400022 S0103-97332004000400022 S0103-97332004000400022.pdf 6977466698742311 9354064620643611 |
| dc.language.iso.fl_str_mv |
eng |
| language |
eng |
| dc.relation.none.fl_str_mv |
Brazilian Journal of Physics 1.082 0,276 |
| dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
| eu_rights_str_mv |
openAccess |
| dc.format.none.fl_str_mv |
620-622 application/pdf |
| dc.publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
| publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
| dc.source.none.fl_str_mv |
SciELO reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
| instname_str |
Universidade Estadual Paulista (UNESP) |
| instacron_str |
UNESP |
| institution |
UNESP |
| reponame_str |
Repositório Institucional da UNESP |
| collection |
Repositório Institucional da UNESP |
| repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
| repository.mail.fl_str_mv |
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1808129075699515392 |