Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy

• Autor(a) principal: Martins, M. R. [UNESP]
• Data de Publicação: 2004
• Outros Autores: Oliveira, José Brás Barreto de [UNESP], Tabata, Américo Sheitiro [UNESP], Laureto, E., Bettini, J., Meneses, E. A., Carvalho, M. M. G.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UNESP
• Texto Completo: http://dx.doi.org/10.1590/S0103-97332004000400022; http://hdl.handle.net/11449/29740

In this work we investigated the optical and structural properties of GaAs/GaInP quantum wells (QW) grown by Chemical Beam Epitaxy (CBE). The samples were characterized by photoluminescence (PL), photoluminescence excitation (PLE) and transmission electron microscopy (TEM). Simulations of the quantum well potential profiles, using the Van de Walle-Martin model, supplemented by our experimental results, allowed us to associate the interface properties with the growth procedures. We concluded that a thin GaP layer grown at the interface improves its quality and also that the observed broad emission band in the PL spectrum is related to quaternary Ga1-xIn xAs1-yPy.