Electric field effects on the confinement properties of GaN/Al x Ga1-xN zincblende and wurtzite nonabrupt quantum wells

Detalhes bibliográficos
Autor(a) principal: Wang,H.
Data de Publicação: 1999
Outros Autores: Farias,G. A., Freire,V. N.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400010
Resumo: We investigate the con.nement properties of GaN/Al xGa1-xN zincblende and wurtzite nonabrupt quantum wells (QWs) in an electric field. It is shown that their Stark shifts decrease considerably when the existence of nonabrupt interfaces are considered. Confined excitons in 50 Å wide GaN/Al0.3Ga0.7N zincblende and wurtzite quantum wells (QWs) can exist up to electric field intensities of the order of 500 kV/cm. In all cases, the electric field effects in GaN/Al xGa1-xN wurtzite QWs are stronger than in similar zincblende QWs.
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spelling Electric field effects on the confinement properties of GaN/Al x Ga1-xN zincblende and wurtzite nonabrupt quantum wellsWe investigate the con.nement properties of GaN/Al xGa1-xN zincblende and wurtzite nonabrupt quantum wells (QWs) in an electric field. It is shown that their Stark shifts decrease considerably when the existence of nonabrupt interfaces are considered. Confined excitons in 50 Å wide GaN/Al0.3Ga0.7N zincblende and wurtzite quantum wells (QWs) can exist up to electric field intensities of the order of 500 kV/cm. In all cases, the electric field effects in GaN/Al xGa1-xN wurtzite QWs are stronger than in similar zincblende QWs.Sociedade Brasileira de Física1999-12-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400010Brazilian Journal of Physics v.29 n.4 1999reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97331999000400010info:eu-repo/semantics/openAccessWang,H.Farias,G. A.Freire,V. N.eng2001-02-23T00:00:00Zoai:scielo:S0103-97331999000400010Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2001-02-23T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Electric field effects on the confinement properties of GaN/Al x Ga1-xN zincblende and wurtzite nonabrupt quantum wells
title Electric field effects on the confinement properties of GaN/Al x Ga1-xN zincblende and wurtzite nonabrupt quantum wells
spellingShingle Electric field effects on the confinement properties of GaN/Al x Ga1-xN zincblende and wurtzite nonabrupt quantum wells
Wang,H.
title_short Electric field effects on the confinement properties of GaN/Al x Ga1-xN zincblende and wurtzite nonabrupt quantum wells
title_full Electric field effects on the confinement properties of GaN/Al x Ga1-xN zincblende and wurtzite nonabrupt quantum wells
title_fullStr Electric field effects on the confinement properties of GaN/Al x Ga1-xN zincblende and wurtzite nonabrupt quantum wells
title_full_unstemmed Electric field effects on the confinement properties of GaN/Al x Ga1-xN zincblende and wurtzite nonabrupt quantum wells
title_sort Electric field effects on the confinement properties of GaN/Al x Ga1-xN zincblende and wurtzite nonabrupt quantum wells
author Wang,H.
author_facet Wang,H.
Farias,G. A.
Freire,V. N.
author_role author
author2 Farias,G. A.
Freire,V. N.
author2_role author
author
dc.contributor.author.fl_str_mv Wang,H.
Farias,G. A.
Freire,V. N.
description We investigate the con.nement properties of GaN/Al xGa1-xN zincblende and wurtzite nonabrupt quantum wells (QWs) in an electric field. It is shown that their Stark shifts decrease considerably when the existence of nonabrupt interfaces are considered. Confined excitons in 50 Å wide GaN/Al0.3Ga0.7N zincblende and wurtzite quantum wells (QWs) can exist up to electric field intensities of the order of 500 kV/cm. In all cases, the electric field effects in GaN/Al xGa1-xN wurtzite QWs are stronger than in similar zincblende QWs.
publishDate 1999
dc.date.none.fl_str_mv 1999-12-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400010
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400010
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97331999000400010
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.29 n.4 1999
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
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