Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure
| Autor(a) principal: | |
|---|---|
| Data de Publicação: | 2006 |
| Outros Autores: | |
| Tipo de documento: | Artigo |
| Idioma: | eng |
| Título da fonte: | Brazilian Journal of Physics |
| Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600018 |
Resumo: | The calculation of the electronic energy levels of n-type delta-doped quantum wells in a GaAs matrix is presented. The effects of hydrostatic pressure on the band structure are taken into account specially when the host material becomes an indirect gap one. The results suggest that under the applied pressure regime the GaAs can support two-dimensional conduction channels associated to the delta-doping, with carrier densities exceeding 10(13) cm-2. |
| id |
SBF-2_1aea7e0339e317ab623d7dd6b35b5af3 |
|---|---|
| oai_identifier_str |
oai:scielo:S0103-97332006000600018 |
| network_acronym_str |
SBF-2 |
| network_name_str |
Brazilian Journal of Physics |
| repository_id_str |
|
| spelling |
Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressureGaAsDelta-dopingHydrostatic pressureThe calculation of the electronic energy levels of n-type delta-doped quantum wells in a GaAs matrix is presented. The effects of hydrostatic pressure on the band structure are taken into account specially when the host material becomes an indirect gap one. The results suggest that under the applied pressure regime the GaAs can support two-dimensional conduction channels associated to the delta-doping, with carrier densities exceeding 10(13) cm-2.Sociedade Brasileira de Física2006-09-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600018Brazilian Journal of Physics v.36 n.3b 2006reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332006000600018info:eu-repo/semantics/openAccessMora-Ramos,M. E.Duque,C. A.eng2006-12-04T00:00:00Zoai:scielo:S0103-97332006000600018Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2006-12-04T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false |
| dc.title.none.fl_str_mv |
Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure |
| title |
Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure |
| spellingShingle |
Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure Mora-Ramos,M. E. GaAs Delta-doping Hydrostatic pressure |
| title_short |
Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure |
| title_full |
Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure |
| title_fullStr |
Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure |
| title_full_unstemmed |
Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure |
| title_sort |
Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure |
| author |
Mora-Ramos,M. E. |
| author_facet |
Mora-Ramos,M. E. Duque,C. A. |
| author_role |
author |
| author2 |
Duque,C. A. |
| author2_role |
author |
| dc.contributor.author.fl_str_mv |
Mora-Ramos,M. E. Duque,C. A. |
| dc.subject.por.fl_str_mv |
GaAs Delta-doping Hydrostatic pressure |
| topic |
GaAs Delta-doping Hydrostatic pressure |
| description |
The calculation of the electronic energy levels of n-type delta-doped quantum wells in a GaAs matrix is presented. The effects of hydrostatic pressure on the band structure are taken into account specially when the host material becomes an indirect gap one. The results suggest that under the applied pressure regime the GaAs can support two-dimensional conduction channels associated to the delta-doping, with carrier densities exceeding 10(13) cm-2. |
| publishDate |
2006 |
| dc.date.none.fl_str_mv |
2006-09-01 |
| dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
| dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
| format |
article |
| status_str |
publishedVersion |
| dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600018 |
| url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600018 |
| dc.language.iso.fl_str_mv |
eng |
| language |
eng |
| dc.relation.none.fl_str_mv |
10.1590/S0103-97332006000600018 |
| dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
| eu_rights_str_mv |
openAccess |
| dc.format.none.fl_str_mv |
text/html |
| dc.publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
| publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
| dc.source.none.fl_str_mv |
Brazilian Journal of Physics v.36 n.3b 2006 reponame:Brazilian Journal of Physics instname:Sociedade Brasileira de Física (SBF) instacron:SBF |
| instname_str |
Sociedade Brasileira de Física (SBF) |
| instacron_str |
SBF |
| institution |
SBF |
| reponame_str |
Brazilian Journal of Physics |
| collection |
Brazilian Journal of Physics |
| repository.name.fl_str_mv |
Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF) |
| repository.mail.fl_str_mv |
sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br |
| _version_ |
1754734863323234304 |