CGS based solar cells with In2S3 buffer layer deposited by CBD and coevaporation
Autor(a) principal: | |
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Data de Publicação: | 2010 |
Outros Autores: | , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Brazilian Journal of Physics |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000100006 |
Resumo: | In this paper we investigated In2S3 as substitute for CdS, which is conventionally used as buffer layer in chalcopyrite based solar cells. In2S3 thin films were deposited by CBD and co-evaporation methods and these were employed as buffer layer in CuGaSe2 based solar cells. Previous to the device fabrication, comparative study was carried out on In2S3 thin films properties deposited from chemical bath containing thioacetamide, Indium Chloride, and sodium citrate, and In2S3 thin films prepared by co-evaporation from its constituents elements. The influence of synthesis conditions on the growth rate, optical, structural and morphological properties of the as-grown In2S3 thin films have been carried out with Spectrophotometry, X-ray diffraction and AFM microscopy techniques. Suitable conditions were found for reproducible and good quality In2S3 thin films synthesis. By depositing In2S3 thin films as buffer layers in CuGaSe2 configuration, a maximum solar cell efficiency of 6% was achieved, whilst the reference solar cell with CdS/CuGaSe2 on similar absorber exhibited 7% efficiency. |
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Brazilian Journal of Physics |
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CGS based solar cells with In2S3 buffer layer deposited by CBD and coevaporationBuffer layerIn2S3CBDchalcopyritestructural propertiesSolar cellIn this paper we investigated In2S3 as substitute for CdS, which is conventionally used as buffer layer in chalcopyrite based solar cells. In2S3 thin films were deposited by CBD and co-evaporation methods and these were employed as buffer layer in CuGaSe2 based solar cells. Previous to the device fabrication, comparative study was carried out on In2S3 thin films properties deposited from chemical bath containing thioacetamide, Indium Chloride, and sodium citrate, and In2S3 thin films prepared by co-evaporation from its constituents elements. The influence of synthesis conditions on the growth rate, optical, structural and morphological properties of the as-grown In2S3 thin films have been carried out with Spectrophotometry, X-ray diffraction and AFM microscopy techniques. Suitable conditions were found for reproducible and good quality In2S3 thin films synthesis. By depositing In2S3 thin films as buffer layers in CuGaSe2 configuration, a maximum solar cell efficiency of 6% was achieved, whilst the reference solar cell with CdS/CuGaSe2 on similar absorber exhibited 7% efficiency.Sociedade Brasileira de Física2010-03-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000100006Brazilian Journal of Physics v.40 n.1 2010reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332010000100006info:eu-repo/semantics/openAccessVallejo,W.Clavijo,J.Gordillo,G.eng2010-04-22T00:00:00Zoai:scielo:S0103-97332010000100006Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2010-04-22T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false |
dc.title.none.fl_str_mv |
CGS based solar cells with In2S3 buffer layer deposited by CBD and coevaporation |
title |
CGS based solar cells with In2S3 buffer layer deposited by CBD and coevaporation |
spellingShingle |
CGS based solar cells with In2S3 buffer layer deposited by CBD and coevaporation Vallejo,W. Buffer layer In2S3 CBD chalcopyrite structural properties Solar cell |
title_short |
CGS based solar cells with In2S3 buffer layer deposited by CBD and coevaporation |
title_full |
CGS based solar cells with In2S3 buffer layer deposited by CBD and coevaporation |
title_fullStr |
CGS based solar cells with In2S3 buffer layer deposited by CBD and coevaporation |
title_full_unstemmed |
CGS based solar cells with In2S3 buffer layer deposited by CBD and coevaporation |
title_sort |
CGS based solar cells with In2S3 buffer layer deposited by CBD and coevaporation |
author |
Vallejo,W. |
author_facet |
Vallejo,W. Clavijo,J. Gordillo,G. |
author_role |
author |
author2 |
Clavijo,J. Gordillo,G. |
author2_role |
author author |
dc.contributor.author.fl_str_mv |
Vallejo,W. Clavijo,J. Gordillo,G. |
dc.subject.por.fl_str_mv |
Buffer layer In2S3 CBD chalcopyrite structural properties Solar cell |
topic |
Buffer layer In2S3 CBD chalcopyrite structural properties Solar cell |
description |
In this paper we investigated In2S3 as substitute for CdS, which is conventionally used as buffer layer in chalcopyrite based solar cells. In2S3 thin films were deposited by CBD and co-evaporation methods and these were employed as buffer layer in CuGaSe2 based solar cells. Previous to the device fabrication, comparative study was carried out on In2S3 thin films properties deposited from chemical bath containing thioacetamide, Indium Chloride, and sodium citrate, and In2S3 thin films prepared by co-evaporation from its constituents elements. The influence of synthesis conditions on the growth rate, optical, structural and morphological properties of the as-grown In2S3 thin films have been carried out with Spectrophotometry, X-ray diffraction and AFM microscopy techniques. Suitable conditions were found for reproducible and good quality In2S3 thin films synthesis. By depositing In2S3 thin films as buffer layers in CuGaSe2 configuration, a maximum solar cell efficiency of 6% was achieved, whilst the reference solar cell with CdS/CuGaSe2 on similar absorber exhibited 7% efficiency. |
publishDate |
2010 |
dc.date.none.fl_str_mv |
2010-03-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000100006 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000100006 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/S0103-97332010000100006 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
dc.source.none.fl_str_mv |
Brazilian Journal of Physics v.40 n.1 2010 reponame:Brazilian Journal of Physics instname:Sociedade Brasileira de Física (SBF) instacron:SBF |
instname_str |
Sociedade Brasileira de Física (SBF) |
instacron_str |
SBF |
institution |
SBF |
reponame_str |
Brazilian Journal of Physics |
collection |
Brazilian Journal of Physics |
repository.name.fl_str_mv |
Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF) |
repository.mail.fl_str_mv |
sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br |
_version_ |
1754734865256808448 |