Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs at high electric field application
Autor(a) principal: | |
---|---|
Data de Publicação: | 2008 |
Outros Autores: | , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Brazilian Journal of Physics |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332008000300001 |
Resumo: | Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs structures have been calculated using an ensemble Monte Carlo simulation. Electronic states within the conduction band valleys at the Γ, L and X are represented by non-parabolic ellipsoidal valleys centred on important symmetry points of the Brillouin zone. The simulation shows that intervalley electron transfer plays a dominant role in high electric fields leading to a strongly inverted electron distribution and to a large negative differential conductance. Our simulation results have also shown that the electron velocity in InAs and AlAs is less sensitive to temperature than in other III-V semiconductors like GaAs and AlGaAs. So InAs and AlAs devices are expected be more tolerant to self-heating and high ambient temperature device modeling. Our steady-state velocity-field characteristics are in fair agreement with other recent calculations. |
id |
SBF-2_4013d443a6c825013059f659b07610e1 |
---|---|
oai_identifier_str |
oai:scielo:S0103-97332008000300001 |
network_acronym_str |
SBF-2 |
network_name_str |
Brazilian Journal of Physics |
repository_id_str |
|
spelling |
Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs at high electric field applicationElectron MobilitySteady-stateEllipsoidal valleysSelf-heatingTemperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs structures have been calculated using an ensemble Monte Carlo simulation. Electronic states within the conduction band valleys at the Γ, L and X are represented by non-parabolic ellipsoidal valleys centred on important symmetry points of the Brillouin zone. The simulation shows that intervalley electron transfer plays a dominant role in high electric fields leading to a strongly inverted electron distribution and to a large negative differential conductance. Our simulation results have also shown that the electron velocity in InAs and AlAs is less sensitive to temperature than in other III-V semiconductors like GaAs and AlGaAs. So InAs and AlAs devices are expected be more tolerant to self-heating and high ambient temperature device modeling. Our steady-state velocity-field characteristics are in fair agreement with other recent calculations.Sociedade Brasileira de Física2008-09-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332008000300001Brazilian Journal of Physics v.38 n.3a 2008reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332008000300001info:eu-repo/semantics/openAccessArabshahi,H.Khalvati,M. R.Rokn-Abadi,M. Rezaeeeng2008-09-22T00:00:00Zoai:scielo:S0103-97332008000300001Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2008-09-22T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false |
dc.title.none.fl_str_mv |
Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs at high electric field application |
title |
Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs at high electric field application |
spellingShingle |
Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs at high electric field application Arabshahi,H. Electron Mobility Steady-state Ellipsoidal valleys Self-heating |
title_short |
Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs at high electric field application |
title_full |
Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs at high electric field application |
title_fullStr |
Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs at high electric field application |
title_full_unstemmed |
Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs at high electric field application |
title_sort |
Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs at high electric field application |
author |
Arabshahi,H. |
author_facet |
Arabshahi,H. Khalvati,M. R. Rokn-Abadi,M. Rezaee |
author_role |
author |
author2 |
Khalvati,M. R. Rokn-Abadi,M. Rezaee |
author2_role |
author author |
dc.contributor.author.fl_str_mv |
Arabshahi,H. Khalvati,M. R. Rokn-Abadi,M. Rezaee |
dc.subject.por.fl_str_mv |
Electron Mobility Steady-state Ellipsoidal valleys Self-heating |
topic |
Electron Mobility Steady-state Ellipsoidal valleys Self-heating |
description |
Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs structures have been calculated using an ensemble Monte Carlo simulation. Electronic states within the conduction band valleys at the Γ, L and X are represented by non-parabolic ellipsoidal valleys centred on important symmetry points of the Brillouin zone. The simulation shows that intervalley electron transfer plays a dominant role in high electric fields leading to a strongly inverted electron distribution and to a large negative differential conductance. Our simulation results have also shown that the electron velocity in InAs and AlAs is less sensitive to temperature than in other III-V semiconductors like GaAs and AlGaAs. So InAs and AlAs devices are expected be more tolerant to self-heating and high ambient temperature device modeling. Our steady-state velocity-field characteristics are in fair agreement with other recent calculations. |
publishDate |
2008 |
dc.date.none.fl_str_mv |
2008-09-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332008000300001 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332008000300001 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/S0103-97332008000300001 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
dc.source.none.fl_str_mv |
Brazilian Journal of Physics v.38 n.3a 2008 reponame:Brazilian Journal of Physics instname:Sociedade Brasileira de Física (SBF) instacron:SBF |
instname_str |
Sociedade Brasileira de Física (SBF) |
instacron_str |
SBF |
institution |
SBF |
reponame_str |
Brazilian Journal of Physics |
collection |
Brazilian Journal of Physics |
repository.name.fl_str_mv |
Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF) |
repository.mail.fl_str_mv |
sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br |
_version_ |
1754734864470376448 |