Hot electron transport properties in characteristics of wurtzite GaN MESFETs using a five-valley model
Autor(a) principal: | |
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Data de Publicação: | 2010 |
Outros Autores: | |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Brazilian Journal of Physics |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000300002 |
Resumo: | Ensemble Monte Carlo simulations have been carried out to investigate the effects of upper valleys on the characteristics of wurtzite GaN MESFETs. Electronic states within the conduction band valleys at the Γ1, U, M, Γ3 and K are represented by non-parabolic ellipsoidal valleys centred on important symmetry points of the Brillouin zone. The following scattering mechanisims, i.e, impurity, polar optical phonon, acoustic phonon, alloy and piezoelectric are inculded in the calculation. Ionized imurity scattering has been treated beyound the Born approximation using the phase-shift analysis. The simulation results show that on the drain side of the gate region, hot electrons attained enough energy to be scattered into the upper satellite conduction valleys. Approximately %20 of the electrons occupy the higher valleys (mainly U and M valley). The simulated device geometries and doping are matched to the nominal parameters described for the experimental structures as closely as possible, and the predicted drain current and other electrical characteristics for the simulated device including upper valleys show much closer agreement with the available experimantal data. |
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Brazilian Journal of Physics |
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Hot electron transport properties in characteristics of wurtzite GaN MESFETs using a five-valley modelMonte CarloEllipsoidal valleysIonized impurityPhase-shiftEnsemble Monte Carlo simulations have been carried out to investigate the effects of upper valleys on the characteristics of wurtzite GaN MESFETs. Electronic states within the conduction band valleys at the Γ1, U, M, Γ3 and K are represented by non-parabolic ellipsoidal valleys centred on important symmetry points of the Brillouin zone. The following scattering mechanisims, i.e, impurity, polar optical phonon, acoustic phonon, alloy and piezoelectric are inculded in the calculation. Ionized imurity scattering has been treated beyound the Born approximation using the phase-shift analysis. The simulation results show that on the drain side of the gate region, hot electrons attained enough energy to be scattered into the upper satellite conduction valleys. Approximately %20 of the electrons occupy the higher valleys (mainly U and M valley). The simulated device geometries and doping are matched to the nominal parameters described for the experimental structures as closely as possible, and the predicted drain current and other electrical characteristics for the simulated device including upper valleys show much closer agreement with the available experimantal data.Sociedade Brasileira de Física2010-09-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000300002Brazilian Journal of Physics v.40 n.3 2010reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332010000300002info:eu-repo/semantics/openAccessArabshahi,H.Rokn- Abadi,M. Rezaeeeng2010-09-27T00:00:00Zoai:scielo:S0103-97332010000300002Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2010-09-27T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false |
dc.title.none.fl_str_mv |
Hot electron transport properties in characteristics of wurtzite GaN MESFETs using a five-valley model |
title |
Hot electron transport properties in characteristics of wurtzite GaN MESFETs using a five-valley model |
spellingShingle |
Hot electron transport properties in characteristics of wurtzite GaN MESFETs using a five-valley model Arabshahi,H. Monte Carlo Ellipsoidal valleys Ionized impurity Phase-shift |
title_short |
Hot electron transport properties in characteristics of wurtzite GaN MESFETs using a five-valley model |
title_full |
Hot electron transport properties in characteristics of wurtzite GaN MESFETs using a five-valley model |
title_fullStr |
Hot electron transport properties in characteristics of wurtzite GaN MESFETs using a five-valley model |
title_full_unstemmed |
Hot electron transport properties in characteristics of wurtzite GaN MESFETs using a five-valley model |
title_sort |
Hot electron transport properties in characteristics of wurtzite GaN MESFETs using a five-valley model |
author |
Arabshahi,H. |
author_facet |
Arabshahi,H. Rokn- Abadi,M. Rezaee |
author_role |
author |
author2 |
Rokn- Abadi,M. Rezaee |
author2_role |
author |
dc.contributor.author.fl_str_mv |
Arabshahi,H. Rokn- Abadi,M. Rezaee |
dc.subject.por.fl_str_mv |
Monte Carlo Ellipsoidal valleys Ionized impurity Phase-shift |
topic |
Monte Carlo Ellipsoidal valleys Ionized impurity Phase-shift |
description |
Ensemble Monte Carlo simulations have been carried out to investigate the effects of upper valleys on the characteristics of wurtzite GaN MESFETs. Electronic states within the conduction band valleys at the Γ1, U, M, Γ3 and K are represented by non-parabolic ellipsoidal valleys centred on important symmetry points of the Brillouin zone. The following scattering mechanisims, i.e, impurity, polar optical phonon, acoustic phonon, alloy and piezoelectric are inculded in the calculation. Ionized imurity scattering has been treated beyound the Born approximation using the phase-shift analysis. The simulation results show that on the drain side of the gate region, hot electrons attained enough energy to be scattered into the upper satellite conduction valleys. Approximately %20 of the electrons occupy the higher valleys (mainly U and M valley). The simulated device geometries and doping are matched to the nominal parameters described for the experimental structures as closely as possible, and the predicted drain current and other electrical characteristics for the simulated device including upper valleys show much closer agreement with the available experimantal data. |
publishDate |
2010 |
dc.date.none.fl_str_mv |
2010-09-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000300002 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000300002 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/S0103-97332010000300002 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
dc.source.none.fl_str_mv |
Brazilian Journal of Physics v.40 n.3 2010 reponame:Brazilian Journal of Physics instname:Sociedade Brasileira de Física (SBF) instacron:SBF |
instname_str |
Sociedade Brasileira de Física (SBF) |
instacron_str |
SBF |
institution |
SBF |
reponame_str |
Brazilian Journal of Physics |
collection |
Brazilian Journal of Physics |
repository.name.fl_str_mv |
Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF) |
repository.mail.fl_str_mv |
sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br |
_version_ |
1754734865407803392 |