Optical Studies of Undoped and Doped Wide Bandgap Carbide and Nitride Semiconductors

Detalhes bibliográficos
Autor(a) principal: Freitas, Jr.,J.A.
Data de Publicação: 1998
Outros Autores: Moore,W.J.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331998000100002
Resumo: The wide bandgap semiconductors Silicon carbide and gallium nitride have been studied by Raman scattering, photoluminescense, and infrared absorption. Raman scattering studies determined crystalline quality and polytype of bulk and thin film samples at room temperature to detected and/or identify impurity centers and structure related defects and their role on the electronic properties of the materiais. Infrared absorption spectroscpopy was used to measure the binding enrgy of donors and their concentration.
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spelling Optical Studies of Undoped and Doped Wide Bandgap Carbide and Nitride SemiconductorsThe wide bandgap semiconductors Silicon carbide and gallium nitride have been studied by Raman scattering, photoluminescense, and infrared absorption. Raman scattering studies determined crystalline quality and polytype of bulk and thin film samples at room temperature to detected and/or identify impurity centers and structure related defects and their role on the electronic properties of the materiais. Infrared absorption spectroscpopy was used to measure the binding enrgy of donors and their concentration.Sociedade Brasileira de Física1998-03-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331998000100002Brazilian Journal of Physics v.28 n.1 1998reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97331998000100002info:eu-repo/semantics/openAccessFreitas, Jr.,J.A.Moore,W.J.eng1999-04-28T00:00:00Zoai:scielo:S0103-97331998000100002Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:1999-04-28T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Optical Studies of Undoped and Doped Wide Bandgap Carbide and Nitride Semiconductors
title Optical Studies of Undoped and Doped Wide Bandgap Carbide and Nitride Semiconductors
spellingShingle Optical Studies of Undoped and Doped Wide Bandgap Carbide and Nitride Semiconductors
Freitas, Jr.,J.A.
title_short Optical Studies of Undoped and Doped Wide Bandgap Carbide and Nitride Semiconductors
title_full Optical Studies of Undoped and Doped Wide Bandgap Carbide and Nitride Semiconductors
title_fullStr Optical Studies of Undoped and Doped Wide Bandgap Carbide and Nitride Semiconductors
title_full_unstemmed Optical Studies of Undoped and Doped Wide Bandgap Carbide and Nitride Semiconductors
title_sort Optical Studies of Undoped and Doped Wide Bandgap Carbide and Nitride Semiconductors
author Freitas, Jr.,J.A.
author_facet Freitas, Jr.,J.A.
Moore,W.J.
author_role author
author2 Moore,W.J.
author2_role author
dc.contributor.author.fl_str_mv Freitas, Jr.,J.A.
Moore,W.J.
description The wide bandgap semiconductors Silicon carbide and gallium nitride have been studied by Raman scattering, photoluminescense, and infrared absorption. Raman scattering studies determined crystalline quality and polytype of bulk and thin film samples at room temperature to detected and/or identify impurity centers and structure related defects and their role on the electronic properties of the materiais. Infrared absorption spectroscpopy was used to measure the binding enrgy of donors and their concentration.
publishDate 1998
dc.date.none.fl_str_mv 1998-03-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331998000100002
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331998000100002
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97331998000100002
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.28 n.1 1998
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
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