Transport properties of a Ga1-xMn xAs/Ga1-yAl yAs double-barrier

• Autor(a) principal: Ritter,C. F.
• Data de Publicação: 2006
• Outros Autores: Makler,S. S., Lima,I. C. da Cunha
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Brazilian Journal of Physics
• Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600003
• topic: Double barrier spin polarizer; Diluted magnetic semiconductors; Spintronic devices

We study the transport properties of a spin filter consisting of a double-barrier resonant tunneling device in which the well is made of a semimagnetic material. Even if the device could be made of several materials, we discuss here the case of a Ga1-xMn xAs/Ga1-yAl yAs system because it can be integrated into the well known AlAs/GaAs technology. We solve the Hamiltonian H = H K+H P+H E+H M+Hh-i+Hh-h. Its terms represent the kinetic energy, the double-barrier profile, the applied bias, the magnetic interaction, the hole-impurity attraction and the hole-hole repulsion, respectively. A very simple one-dimensional Green function is introduced to solve self-consistently the Poisson equation for the profile due to the charge distribution. A real space renormalization formalism is used to calculate exactly the currents. In a previous work we have shown that the Rashba effect is weak. Therefore the results show very well defined spin-polarized currents. Our results confirm that this system is a good device for spintronics.