Four-point probe electrical measurements on p-n-p InP structures

Detalhes bibliográficos
Autor(a) principal: Sequeira,C. A. C.
Data de Publicação: 2007
Outros Autores: Santos,D. M. F.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332007000700002
Resumo: The diffusion of zinc into n-type InP has been studied by four-point probe electrical measurements on homogeneously doped crystals at 750 ºC. The zinc carrier concentration in the diffused layer was approximately 3 x 10(18) cm-3 and its mobility was assumed to be about 40 cm² V-1 s-1. It was observed that the concentration of free carriers throughout the entire diffused region is always less than the number of introduced impurity atoms. Possible reasons are discussed to explain the observed differences. Moreover this non-correlation phenomenon did provide substantial backing to the Hall Effect and C-V measurements that are being carried out to further analyse the Zn-InP diffused layer.
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spelling Four-point probe electrical measurements on p-n-p InP structuresIndium phosphideFour-point probe techniqueZinc diffusionImpurity profilesThe diffusion of zinc into n-type InP has been studied by four-point probe electrical measurements on homogeneously doped crystals at 750 ºC. The zinc carrier concentration in the diffused layer was approximately 3 x 10(18) cm-3 and its mobility was assumed to be about 40 cm² V-1 s-1. It was observed that the concentration of free carriers throughout the entire diffused region is always less than the number of introduced impurity atoms. Possible reasons are discussed to explain the observed differences. Moreover this non-correlation phenomenon did provide substantial backing to the Hall Effect and C-V measurements that are being carried out to further analyse the Zn-InP diffused layer.Sociedade Brasileira de Física2007-09-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332007000700002Brazilian Journal of Physics v.37 n.3b 2007reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332007000700002info:eu-repo/semantics/openAccessSequeira,C. A. C.Santos,D. M. F.eng2007-10-19T00:00:00Zoai:scielo:S0103-97332007000700002Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2007-10-19T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Four-point probe electrical measurements on p-n-p InP structures
title Four-point probe electrical measurements on p-n-p InP structures
spellingShingle Four-point probe electrical measurements on p-n-p InP structures
Sequeira,C. A. C.
Indium phosphide
Four-point probe technique
Zinc diffusion
Impurity profiles
title_short Four-point probe electrical measurements on p-n-p InP structures
title_full Four-point probe electrical measurements on p-n-p InP structures
title_fullStr Four-point probe electrical measurements on p-n-p InP structures
title_full_unstemmed Four-point probe electrical measurements on p-n-p InP structures
title_sort Four-point probe electrical measurements on p-n-p InP structures
author Sequeira,C. A. C.
author_facet Sequeira,C. A. C.
Santos,D. M. F.
author_role author
author2 Santos,D. M. F.
author2_role author
dc.contributor.author.fl_str_mv Sequeira,C. A. C.
Santos,D. M. F.
dc.subject.por.fl_str_mv Indium phosphide
Four-point probe technique
Zinc diffusion
Impurity profiles
topic Indium phosphide
Four-point probe technique
Zinc diffusion
Impurity profiles
description The diffusion of zinc into n-type InP has been studied by four-point probe electrical measurements on homogeneously doped crystals at 750 ºC. The zinc carrier concentration in the diffused layer was approximately 3 x 10(18) cm-3 and its mobility was assumed to be about 40 cm² V-1 s-1. It was observed that the concentration of free carriers throughout the entire diffused region is always less than the number of introduced impurity atoms. Possible reasons are discussed to explain the observed differences. Moreover this non-correlation phenomenon did provide substantial backing to the Hall Effect and C-V measurements that are being carried out to further analyse the Zn-InP diffused layer.
publishDate 2007
dc.date.none.fl_str_mv 2007-09-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332007000700002
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332007000700002
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97332007000700002
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.37 n.3b 2007
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
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