Metal-insulator transition at B=0 in an AlGaAs/GaAs two-dimensional electron gas under the influence of InAs self-assembled quantum dots

Detalhes bibliográficos
Autor(a) principal: Ribeiro,E.
Data de Publicação: 1999
Outros Autores: Jäggi,R., Heinzel,T., Ensslin,K., Medeiros-Ribeiro,G., Petroff,P. M.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400026
Resumo: We report the observation of a metal-insulator transition in zero magnetic eld in a two dimensional electron gas under the influence of a plane of InAs self-assembled quantum dots located at 30 Å below the AlGaAs/GaAs heterointerface. The transition is observed as a function of temperature and electric field at B=0. A scaling analysis yields exponents similar to those obtained for Si MOSFET's . We suggest that the disorder introduced by the quantum dots plays a crucial role.
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spelling Metal-insulator transition at B=0 in an AlGaAs/GaAs two-dimensional electron gas under the influence of InAs self-assembled quantum dotsWe report the observation of a metal-insulator transition in zero magnetic eld in a two dimensional electron gas under the influence of a plane of InAs self-assembled quantum dots located at 30 Å below the AlGaAs/GaAs heterointerface. The transition is observed as a function of temperature and electric field at B=0. A scaling analysis yields exponents similar to those obtained for Si MOSFET's . We suggest that the disorder introduced by the quantum dots plays a crucial role.Sociedade Brasileira de Física1999-12-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400026Brazilian Journal of Physics v.29 n.4 1999reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97331999000400026info:eu-repo/semantics/openAccessRibeiro,E.Jäggi,R.Heinzel,T.Ensslin,K.Medeiros-Ribeiro,G.Petroff,P. M.eng2001-02-23T00:00:00Zoai:scielo:S0103-97331999000400026Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2001-02-23T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Metal-insulator transition at B=0 in an AlGaAs/GaAs two-dimensional electron gas under the influence of InAs self-assembled quantum dots
title Metal-insulator transition at B=0 in an AlGaAs/GaAs two-dimensional electron gas under the influence of InAs self-assembled quantum dots
spellingShingle Metal-insulator transition at B=0 in an AlGaAs/GaAs two-dimensional electron gas under the influence of InAs self-assembled quantum dots
Ribeiro,E.
title_short Metal-insulator transition at B=0 in an AlGaAs/GaAs two-dimensional electron gas under the influence of InAs self-assembled quantum dots
title_full Metal-insulator transition at B=0 in an AlGaAs/GaAs two-dimensional electron gas under the influence of InAs self-assembled quantum dots
title_fullStr Metal-insulator transition at B=0 in an AlGaAs/GaAs two-dimensional electron gas under the influence of InAs self-assembled quantum dots
title_full_unstemmed Metal-insulator transition at B=0 in an AlGaAs/GaAs two-dimensional electron gas under the influence of InAs self-assembled quantum dots
title_sort Metal-insulator transition at B=0 in an AlGaAs/GaAs two-dimensional electron gas under the influence of InAs self-assembled quantum dots
author Ribeiro,E.
author_facet Ribeiro,E.
Jäggi,R.
Heinzel,T.
Ensslin,K.
Medeiros-Ribeiro,G.
Petroff,P. M.
author_role author
author2 Jäggi,R.
Heinzel,T.
Ensslin,K.
Medeiros-Ribeiro,G.
Petroff,P. M.
author2_role author
author
author
author
author
dc.contributor.author.fl_str_mv Ribeiro,E.
Jäggi,R.
Heinzel,T.
Ensslin,K.
Medeiros-Ribeiro,G.
Petroff,P. M.
description We report the observation of a metal-insulator transition in zero magnetic eld in a two dimensional electron gas under the influence of a plane of InAs self-assembled quantum dots located at 30 Å below the AlGaAs/GaAs heterointerface. The transition is observed as a function of temperature and electric field at B=0. A scaling analysis yields exponents similar to those obtained for Si MOSFET's . We suggest that the disorder introduced by the quantum dots plays a crucial role.
publishDate 1999
dc.date.none.fl_str_mv 1999-12-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400026
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400026
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97331999000400026
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.29 n.4 1999
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
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