Influence of annealing on the optical and electrical properties of multilayered InAs/GaAs quantum dots

Detalhes bibliográficos
Autor(a) principal: Chiquito,A. J.
Data de Publicação: 2002
Outros Autores: Pusep,Yu. A., Mergulhão,S., Gobato,Y. Galvão, Galzerani,J. C.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200009
Resumo: The characteristics of multi-layered InAs/GaAs self assembled quantum dots (SAQDs) annealed after the growth were here studied using a combination of capacitance-voltage (C-V) measurements,Raman scattering and photoluminescence (PL) spectroscopy. The combination of the results obtained with the three techniques, gave evidences that the annealing at 500º C causes the sharpness of the SAQDs interfaces, while the annealing at 600º C eliminated the SAQDs. However, the comparison with the case of single layered SAQDs, revealed a thermal stability of the last system even at an annealing temperature of 700º C, thus confirming the role of the interlayer strain in the low temperature diffusion process.
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spelling Influence of annealing on the optical and electrical properties of multilayered InAs/GaAs quantum dotsThe characteristics of multi-layered InAs/GaAs self assembled quantum dots (SAQDs) annealed after the growth were here studied using a combination of capacitance-voltage (C-V) measurements,Raman scattering and photoluminescence (PL) spectroscopy. The combination of the results obtained with the three techniques, gave evidences that the annealing at 500º C causes the sharpness of the SAQDs interfaces, while the annealing at 600º C eliminated the SAQDs. However, the comparison with the case of single layered SAQDs, revealed a thermal stability of the last system even at an annealing temperature of 700º C, thus confirming the role of the interlayer strain in the low temperature diffusion process.Sociedade Brasileira de Física2002-06-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200009Brazilian Journal of Physics v.32 n.2a 2002reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332002000200009info:eu-repo/semantics/openAccessChiquito,A. J.Pusep,Yu. A.Mergulhão,S.Gobato,Y. GalvãoGalzerani,J. C.eng2002-11-26T00:00:00Zoai:scielo:S0103-97332002000200009Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2002-11-26T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Influence of annealing on the optical and electrical properties of multilayered InAs/GaAs quantum dots
title Influence of annealing on the optical and electrical properties of multilayered InAs/GaAs quantum dots
spellingShingle Influence of annealing on the optical and electrical properties of multilayered InAs/GaAs quantum dots
Chiquito,A. J.
title_short Influence of annealing on the optical and electrical properties of multilayered InAs/GaAs quantum dots
title_full Influence of annealing on the optical and electrical properties of multilayered InAs/GaAs quantum dots
title_fullStr Influence of annealing on the optical and electrical properties of multilayered InAs/GaAs quantum dots
title_full_unstemmed Influence of annealing on the optical and electrical properties of multilayered InAs/GaAs quantum dots
title_sort Influence of annealing on the optical and electrical properties of multilayered InAs/GaAs quantum dots
author Chiquito,A. J.
author_facet Chiquito,A. J.
Pusep,Yu. A.
Mergulhão,S.
Gobato,Y. Galvão
Galzerani,J. C.
author_role author
author2 Pusep,Yu. A.
Mergulhão,S.
Gobato,Y. Galvão
Galzerani,J. C.
author2_role author
author
author
author
dc.contributor.author.fl_str_mv Chiquito,A. J.
Pusep,Yu. A.
Mergulhão,S.
Gobato,Y. Galvão
Galzerani,J. C.
description The characteristics of multi-layered InAs/GaAs self assembled quantum dots (SAQDs) annealed after the growth were here studied using a combination of capacitance-voltage (C-V) measurements,Raman scattering and photoluminescence (PL) spectroscopy. The combination of the results obtained with the three techniques, gave evidences that the annealing at 500º C causes the sharpness of the SAQDs interfaces, while the annealing at 600º C eliminated the SAQDs. However, the comparison with the case of single layered SAQDs, revealed a thermal stability of the last system even at an annealing temperature of 700º C, thus confirming the role of the interlayer strain in the low temperature diffusion process.
publishDate 2002
dc.date.none.fl_str_mv 2002-06-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200009
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200009
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97332002000200009
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.32 n.2a 2002
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
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