Erbium in a-Si:H
Autor(a) principal: | |
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Data de Publicação: | 1999 |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Brazilian Journal of Physics |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400003 |
Resumo: | A review of the current status of research on Er 3+ doped hydrogenated amorphous silicon (a-Si:H) is presented. Er has been introduced in a-Si:H and a-SiOx:H by ion implantation, co-sputtering and PECVD. In all cases, the characteristic atomic-like intra-4f 4I13/2 -> 4I15/2 photoluminescence emission at ~ 1.54 µm is observed at room temperature. The Er 3+ luminescence probability is determined by the local neighborhood of the ions. Therefore, local probes like EXAFS and Mössbauer spectroscopy have yielded very important information. A discussion of excitation processes, electroluminescence, and electronic doping effects, is also presented. |
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Brazilian Journal of Physics |
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Erbium in a-Si:HA review of the current status of research on Er 3+ doped hydrogenated amorphous silicon (a-Si:H) is presented. Er has been introduced in a-Si:H and a-SiOx:H by ion implantation, co-sputtering and PECVD. In all cases, the characteristic atomic-like intra-4f 4I13/2 -> 4I15/2 photoluminescence emission at ~ 1.54 µm is observed at room temperature. The Er 3+ luminescence probability is determined by the local neighborhood of the ions. Therefore, local probes like EXAFS and Mössbauer spectroscopy have yielded very important information. A discussion of excitation processes, electroluminescence, and electronic doping effects, is also presented.Sociedade Brasileira de Física1999-12-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400003Brazilian Journal of Physics v.29 n.4 1999reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97331999000400003info:eu-repo/semantics/openAccessTessler,Leandro R.eng2001-02-23T00:00:00Zoai:scielo:S0103-97331999000400003Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2001-02-23T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false |
dc.title.none.fl_str_mv |
Erbium in a-Si:H |
title |
Erbium in a-Si:H |
spellingShingle |
Erbium in a-Si:H Tessler,Leandro R. |
title_short |
Erbium in a-Si:H |
title_full |
Erbium in a-Si:H |
title_fullStr |
Erbium in a-Si:H |
title_full_unstemmed |
Erbium in a-Si:H |
title_sort |
Erbium in a-Si:H |
author |
Tessler,Leandro R. |
author_facet |
Tessler,Leandro R. |
author_role |
author |
dc.contributor.author.fl_str_mv |
Tessler,Leandro R. |
description |
A review of the current status of research on Er 3+ doped hydrogenated amorphous silicon (a-Si:H) is presented. Er has been introduced in a-Si:H and a-SiOx:H by ion implantation, co-sputtering and PECVD. In all cases, the characteristic atomic-like intra-4f 4I13/2 -> 4I15/2 photoluminescence emission at ~ 1.54 µm is observed at room temperature. The Er 3+ luminescence probability is determined by the local neighborhood of the ions. Therefore, local probes like EXAFS and Mössbauer spectroscopy have yielded very important information. A discussion of excitation processes, electroluminescence, and electronic doping effects, is also presented. |
publishDate |
1999 |
dc.date.none.fl_str_mv |
1999-12-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400003 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400003 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/S0103-97331999000400003 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
dc.source.none.fl_str_mv |
Brazilian Journal of Physics v.29 n.4 1999 reponame:Brazilian Journal of Physics instname:Sociedade Brasileira de Física (SBF) instacron:SBF |
instname_str |
Sociedade Brasileira de Física (SBF) |
instacron_str |
SBF |
institution |
SBF |
reponame_str |
Brazilian Journal of Physics |
collection |
Brazilian Journal of Physics |
repository.name.fl_str_mv |
Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF) |
repository.mail.fl_str_mv |
sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br |
_version_ |
1754734858786045952 |