Tellurium - modified surface states of GaAs(001) and InAs(001)
Autor(a) principal: | |
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Data de Publicação: | 1999 |
Outros Autores: | |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Brazilian Journal of Physics |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400045 |
Resumo: | We investigate the stability and electronic structure of 1×2 and 2×2 GaAs(001):Te and InAs(001):Te surfaces with different degrees of tellurium coverage (thetaTe = <img src="http:/img/fbpe/bjp/v29n4/a4414.gif" alt="a4414.gif (106 bytes)" align="absmiddle">, <img src="http:/img/fbpe/bjp/v29n4/a4412.gif" alt="a4412.gif (100 bytes)" align="absmiddle">, <img src="http:/img/fbpe/bjp/v29n4/a4434.gif" alt="a4434.gif (104 bytes)" align="absmiddle">, 1), by means of rst-principles pseudopotential calculations within density-functional theory. The adsorption stability decreases as the tellurium coverage increases. The adsorption on InAs(001) is more stable than on GaAs(001). As-Ga (or As-In) bonds for the uppermost As atoms are s²p² -like (nearly planar), while the Te bonds at the surfaces are sp³-like. The hetero-dimers in thetaTe = <img src="http:/img/fbpe/bjp/v29n4/a4412.gif" alt="a4412.gif (100 bytes)" align="absmiddle"> modify the character of GaAs(001):Te and InAs(001):Te surfaces resulting in a semiconductor structure. |
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Brazilian Journal of Physics |
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Tellurium - modified surface states of GaAs(001) and InAs(001)We investigate the stability and electronic structure of 1×2 and 2×2 GaAs(001):Te and InAs(001):Te surfaces with different degrees of tellurium coverage (thetaTe = <img src="http:/img/fbpe/bjp/v29n4/a4414.gif" alt="a4414.gif (106 bytes)" align="absmiddle">, <img src="http:/img/fbpe/bjp/v29n4/a4412.gif" alt="a4412.gif (100 bytes)" align="absmiddle">, <img src="http:/img/fbpe/bjp/v29n4/a4434.gif" alt="a4434.gif (104 bytes)" align="absmiddle">, 1), by means of rst-principles pseudopotential calculations within density-functional theory. The adsorption stability decreases as the tellurium coverage increases. The adsorption on InAs(001) is more stable than on GaAs(001). As-Ga (or As-In) bonds for the uppermost As atoms are s²p² -like (nearly planar), while the Te bonds at the surfaces are sp³-like. The hetero-dimers in thetaTe = <img src="http:/img/fbpe/bjp/v29n4/a4412.gif" alt="a4412.gif (100 bytes)" align="absmiddle"> modify the character of GaAs(001):Te and InAs(001):Te surfaces resulting in a semiconductor structure.Sociedade Brasileira de Física1999-12-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400045Brazilian Journal of Physics v.29 n.4 1999reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97331999000400045info:eu-repo/semantics/openAccessSilva,R. Claudino daFerraz,A. C.eng2001-02-23T00:00:00Zoai:scielo:S0103-97331999000400045Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2001-02-23T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false |
dc.title.none.fl_str_mv |
Tellurium - modified surface states of GaAs(001) and InAs(001) |
title |
Tellurium - modified surface states of GaAs(001) and InAs(001) |
spellingShingle |
Tellurium - modified surface states of GaAs(001) and InAs(001) Silva,R. Claudino da |
title_short |
Tellurium - modified surface states of GaAs(001) and InAs(001) |
title_full |
Tellurium - modified surface states of GaAs(001) and InAs(001) |
title_fullStr |
Tellurium - modified surface states of GaAs(001) and InAs(001) |
title_full_unstemmed |
Tellurium - modified surface states of GaAs(001) and InAs(001) |
title_sort |
Tellurium - modified surface states of GaAs(001) and InAs(001) |
author |
Silva,R. Claudino da |
author_facet |
Silva,R. Claudino da Ferraz,A. C. |
author_role |
author |
author2 |
Ferraz,A. C. |
author2_role |
author |
dc.contributor.author.fl_str_mv |
Silva,R. Claudino da Ferraz,A. C. |
description |
We investigate the stability and electronic structure of 1×2 and 2×2 GaAs(001):Te and InAs(001):Te surfaces with different degrees of tellurium coverage (thetaTe = <img src="http:/img/fbpe/bjp/v29n4/a4414.gif" alt="a4414.gif (106 bytes)" align="absmiddle">, <img src="http:/img/fbpe/bjp/v29n4/a4412.gif" alt="a4412.gif (100 bytes)" align="absmiddle">, <img src="http:/img/fbpe/bjp/v29n4/a4434.gif" alt="a4434.gif (104 bytes)" align="absmiddle">, 1), by means of rst-principles pseudopotential calculations within density-functional theory. The adsorption stability decreases as the tellurium coverage increases. The adsorption on InAs(001) is more stable than on GaAs(001). As-Ga (or As-In) bonds for the uppermost As atoms are s²p² -like (nearly planar), while the Te bonds at the surfaces are sp³-like. The hetero-dimers in thetaTe = <img src="http:/img/fbpe/bjp/v29n4/a4412.gif" alt="a4412.gif (100 bytes)" align="absmiddle"> modify the character of GaAs(001):Te and InAs(001):Te surfaces resulting in a semiconductor structure. |
publishDate |
1999 |
dc.date.none.fl_str_mv |
1999-12-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400045 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400045 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/S0103-97331999000400045 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
dc.source.none.fl_str_mv |
Brazilian Journal of Physics v.29 n.4 1999 reponame:Brazilian Journal of Physics instname:Sociedade Brasileira de Física (SBF) instacron:SBF |
instname_str |
Sociedade Brasileira de Física (SBF) |
instacron_str |
SBF |
institution |
SBF |
reponame_str |
Brazilian Journal of Physics |
collection |
Brazilian Journal of Physics |
repository.name.fl_str_mv |
Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF) |
repository.mail.fl_str_mv |
sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br |
_version_ |
1754734858837426176 |