Annealing time effect on the properties of CuInSe2 grown by electrodeposition using two electrodes system

Detalhes bibliográficos
Autor(a) principal: Bouraiou,A.
Data de Publicação: 2009
Outros Autores: Aida,M.S., Mosbah,A., Attaf,N.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332009000500006
Resumo: In this paper, we report the effect of annealing time on the properties of copper indium diselenide CuInSe2 films. The CuInSe2 thin films have been grown at room temperature by electrochemical deposition technique using two electrodes system. The as deposited films were annealed under argon atmosphere at 300 ºC during 15, 30, 45 and 60 min. The structural and morphological properties of the resulting films were characterized respectively by means of x-ray diffraction (XRD) and scanning electron microscopy (SEM). The optical band gap was estimated from transmittance measurements. We have found, that after annealing, all films present CuInSe2 in its chalcopyrite structure and with preferred orientation along <112> direction. The film annealed during 45 min exhibits better crystallinity and excellent optical properties. The SEM pictures show that the elaborated films have a uniform surface morphology with a homogeneity distribution of crystallites, the grain became higher in size with prolongation of annealing time; it lays in the range of 195 to 515 Å.
id SBF-2_badbb00658e50e8beb24b084559d9bca
oai_identifier_str oai:scielo:S0103-97332009000500006
network_acronym_str SBF-2
network_name_str Brazilian Journal of Physics
repository_id_str
spelling Annealing time effect on the properties of CuInSe2 grown by electrodeposition using two electrodes systemthin filmsCuInSe2electrodepositionannealing timeIn this paper, we report the effect of annealing time on the properties of copper indium diselenide CuInSe2 films. The CuInSe2 thin films have been grown at room temperature by electrochemical deposition technique using two electrodes system. The as deposited films were annealed under argon atmosphere at 300 ºC during 15, 30, 45 and 60 min. The structural and morphological properties of the resulting films were characterized respectively by means of x-ray diffraction (XRD) and scanning electron microscopy (SEM). The optical band gap was estimated from transmittance measurements. We have found, that after annealing, all films present CuInSe2 in its chalcopyrite structure and with preferred orientation along <112> direction. The film annealed during 45 min exhibits better crystallinity and excellent optical properties. The SEM pictures show that the elaborated films have a uniform surface morphology with a homogeneity distribution of crystallites, the grain became higher in size with prolongation of annealing time; it lays in the range of 195 to 515 Å.Sociedade Brasileira de Física2009-09-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332009000500006Brazilian Journal of Physics v.39 n.3 2009reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332009000500006info:eu-repo/semantics/openAccessBouraiou,A.Aida,M.S.Mosbah,A.Attaf,N.eng2009-10-15T00:00:00Zoai:scielo:S0103-97332009000500006Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2009-10-15T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Annealing time effect on the properties of CuInSe2 grown by electrodeposition using two electrodes system
title Annealing time effect on the properties of CuInSe2 grown by electrodeposition using two electrodes system
spellingShingle Annealing time effect on the properties of CuInSe2 grown by electrodeposition using two electrodes system
Bouraiou,A.
thin films
CuInSe2
electrodeposition
annealing time
title_short Annealing time effect on the properties of CuInSe2 grown by electrodeposition using two electrodes system
title_full Annealing time effect on the properties of CuInSe2 grown by electrodeposition using two electrodes system
title_fullStr Annealing time effect on the properties of CuInSe2 grown by electrodeposition using two electrodes system
title_full_unstemmed Annealing time effect on the properties of CuInSe2 grown by electrodeposition using two electrodes system
title_sort Annealing time effect on the properties of CuInSe2 grown by electrodeposition using two electrodes system
author Bouraiou,A.
author_facet Bouraiou,A.
Aida,M.S.
Mosbah,A.
Attaf,N.
author_role author
author2 Aida,M.S.
Mosbah,A.
Attaf,N.
author2_role author
author
author
dc.contributor.author.fl_str_mv Bouraiou,A.
Aida,M.S.
Mosbah,A.
Attaf,N.
dc.subject.por.fl_str_mv thin films
CuInSe2
electrodeposition
annealing time
topic thin films
CuInSe2
electrodeposition
annealing time
description In this paper, we report the effect of annealing time on the properties of copper indium diselenide CuInSe2 films. The CuInSe2 thin films have been grown at room temperature by electrochemical deposition technique using two electrodes system. The as deposited films were annealed under argon atmosphere at 300 ºC during 15, 30, 45 and 60 min. The structural and morphological properties of the resulting films were characterized respectively by means of x-ray diffraction (XRD) and scanning electron microscopy (SEM). The optical band gap was estimated from transmittance measurements. We have found, that after annealing, all films present CuInSe2 in its chalcopyrite structure and with preferred orientation along <112> direction. The film annealed during 45 min exhibits better crystallinity and excellent optical properties. The SEM pictures show that the elaborated films have a uniform surface morphology with a homogeneity distribution of crystallites, the grain became higher in size with prolongation of annealing time; it lays in the range of 195 to 515 Å.
publishDate 2009
dc.date.none.fl_str_mv 2009-09-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332009000500006
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332009000500006
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97332009000500006
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.39 n.3 2009
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
_version_ 1754734865204379648