Spin-dependent conductance in nonmagnetic InGaAs asymmetric double barrier devices
Autor(a) principal: | |
---|---|
Data de Publicação: | 2004 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Brazilian Journal of Physics |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400026 |
Resumo: | The spin dependence of the conductance of an asymmetric double-barrier InGaAs device is studied within the multiband k·p and envelope function approximations. The spin-dependent transmission probability for electrons across the structure is obtained using transfer matrices and the low bias conductance per unit area is calculated as a function of the Fermi energy (or doping) in the contacts. The possibility to obtain spin polarized currents in such devices is demonstrated, however, the resulting degree of polarization is rather small (a few percent) in the specific InGaAs structures considered here. |
id |
SBF-2_bcadf2866b470e0564af66dadca1eb71 |
---|---|
oai_identifier_str |
oai:scielo:S0103-97332004000400026 |
network_acronym_str |
SBF-2 |
network_name_str |
Brazilian Journal of Physics |
repository_id_str |
|
spelling |
Spin-dependent conductance in nonmagnetic InGaAs asymmetric double barrier devicesThe spin dependence of the conductance of an asymmetric double-barrier InGaAs device is studied within the multiband k·p and envelope function approximations. The spin-dependent transmission probability for electrons across the structure is obtained using transfer matrices and the low bias conductance per unit area is calculated as a function of the Fermi energy (or doping) in the contacts. The possibility to obtain spin polarized currents in such devices is demonstrated, however, the resulting degree of polarization is rather small (a few percent) in the specific InGaAs structures considered here.Sociedade Brasileira de Física2004-06-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400026Brazilian Journal of Physics v.34 n.2b 2004reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332004000400026info:eu-repo/semantics/openAccessAraujo,C. MoysesFerreira da Silva,A.Persson,C.Ahuja,R.Silva,E. A. de Andrada eeng2004-08-31T00:00:00Zoai:scielo:S0103-97332004000400026Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2004-08-31T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false |
dc.title.none.fl_str_mv |
Spin-dependent conductance in nonmagnetic InGaAs asymmetric double barrier devices |
title |
Spin-dependent conductance in nonmagnetic InGaAs asymmetric double barrier devices |
spellingShingle |
Spin-dependent conductance in nonmagnetic InGaAs asymmetric double barrier devices Araujo,C. Moyses |
title_short |
Spin-dependent conductance in nonmagnetic InGaAs asymmetric double barrier devices |
title_full |
Spin-dependent conductance in nonmagnetic InGaAs asymmetric double barrier devices |
title_fullStr |
Spin-dependent conductance in nonmagnetic InGaAs asymmetric double barrier devices |
title_full_unstemmed |
Spin-dependent conductance in nonmagnetic InGaAs asymmetric double barrier devices |
title_sort |
Spin-dependent conductance in nonmagnetic InGaAs asymmetric double barrier devices |
author |
Araujo,C. Moyses |
author_facet |
Araujo,C. Moyses Ferreira da Silva,A. Persson,C. Ahuja,R. Silva,E. A. de Andrada e |
author_role |
author |
author2 |
Ferreira da Silva,A. Persson,C. Ahuja,R. Silva,E. A. de Andrada e |
author2_role |
author author author author |
dc.contributor.author.fl_str_mv |
Araujo,C. Moyses Ferreira da Silva,A. Persson,C. Ahuja,R. Silva,E. A. de Andrada e |
description |
The spin dependence of the conductance of an asymmetric double-barrier InGaAs device is studied within the multiband k·p and envelope function approximations. The spin-dependent transmission probability for electrons across the structure is obtained using transfer matrices and the low bias conductance per unit area is calculated as a function of the Fermi energy (or doping) in the contacts. The possibility to obtain spin polarized currents in such devices is demonstrated, however, the resulting degree of polarization is rather small (a few percent) in the specific InGaAs structures considered here. |
publishDate |
2004 |
dc.date.none.fl_str_mv |
2004-06-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400026 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400026 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/S0103-97332004000400026 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
dc.source.none.fl_str_mv |
Brazilian Journal of Physics v.34 n.2b 2004 reponame:Brazilian Journal of Physics instname:Sociedade Brasileira de Física (SBF) instacron:SBF |
instname_str |
Sociedade Brasileira de Física (SBF) |
instacron_str |
SBF |
institution |
SBF |
reponame_str |
Brazilian Journal of Physics |
collection |
Brazilian Journal of Physics |
repository.name.fl_str_mv |
Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF) |
repository.mail.fl_str_mv |
sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br |
_version_ |
1754734861055164416 |