Electron mobility study of hot-wall CVD GaN and InN nanowires

Detalhes bibliográficos
Autor(a) principal: Cimpoiasu,Elena
Data de Publicação: 2006
Outros Autores: Stern,Eric, Cheng,Guosheng, Munden,Ryan, Sanders,Aric, Reed,Mark A.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600007
Resumo: A review of the dependence of the electron mobility on the free carrier concentration for gallium nitride and indium nitride nanowires grown using hot-wall chemical vapour deposition is presented. Gallium nitride nanowires exhibit mobilities of 100 cm²/Vs to below 1 cm²/Vs for carrier concentrations of 10(19) to 10(20) cm- 3. Theoretical estimations and annealing experiments indicate that the nanowires are heavily compensated. Indium nitride nanowires also exhibit high carrier concentrations, of the order of 10(20) to 10(22) cm- 3. For both types of nanowires, mobility decreases with increasing carrier concentration, consistent with transport limited by impurity scattering.
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spelling Electron mobility study of hot-wall CVD GaN and InN nanowiresGaNInNNanowiresElectron transportA review of the dependence of the electron mobility on the free carrier concentration for gallium nitride and indium nitride nanowires grown using hot-wall chemical vapour deposition is presented. Gallium nitride nanowires exhibit mobilities of 100 cm²/Vs to below 1 cm²/Vs for carrier concentrations of 10(19) to 10(20) cm- 3. Theoretical estimations and annealing experiments indicate that the nanowires are heavily compensated. Indium nitride nanowires also exhibit high carrier concentrations, of the order of 10(20) to 10(22) cm- 3. For both types of nanowires, mobility decreases with increasing carrier concentration, consistent with transport limited by impurity scattering.Sociedade Brasileira de Física2006-09-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600007Brazilian Journal of Physics v.36 n.3b 2006reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332006000600007info:eu-repo/semantics/openAccessCimpoiasu,ElenaStern,EricCheng,GuoshengMunden,RyanSanders,AricReed,Mark A.eng2006-11-29T00:00:00Zoai:scielo:S0103-97332006000600007Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2006-11-29T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Electron mobility study of hot-wall CVD GaN and InN nanowires
title Electron mobility study of hot-wall CVD GaN and InN nanowires
spellingShingle Electron mobility study of hot-wall CVD GaN and InN nanowires
Cimpoiasu,Elena
GaN
InN
Nanowires
Electron transport
title_short Electron mobility study of hot-wall CVD GaN and InN nanowires
title_full Electron mobility study of hot-wall CVD GaN and InN nanowires
title_fullStr Electron mobility study of hot-wall CVD GaN and InN nanowires
title_full_unstemmed Electron mobility study of hot-wall CVD GaN and InN nanowires
title_sort Electron mobility study of hot-wall CVD GaN and InN nanowires
author Cimpoiasu,Elena
author_facet Cimpoiasu,Elena
Stern,Eric
Cheng,Guosheng
Munden,Ryan
Sanders,Aric
Reed,Mark A.
author_role author
author2 Stern,Eric
Cheng,Guosheng
Munden,Ryan
Sanders,Aric
Reed,Mark A.
author2_role author
author
author
author
author
dc.contributor.author.fl_str_mv Cimpoiasu,Elena
Stern,Eric
Cheng,Guosheng
Munden,Ryan
Sanders,Aric
Reed,Mark A.
dc.subject.por.fl_str_mv GaN
InN
Nanowires
Electron transport
topic GaN
InN
Nanowires
Electron transport
description A review of the dependence of the electron mobility on the free carrier concentration for gallium nitride and indium nitride nanowires grown using hot-wall chemical vapour deposition is presented. Gallium nitride nanowires exhibit mobilities of 100 cm²/Vs to below 1 cm²/Vs for carrier concentrations of 10(19) to 10(20) cm- 3. Theoretical estimations and annealing experiments indicate that the nanowires are heavily compensated. Indium nitride nanowires also exhibit high carrier concentrations, of the order of 10(20) to 10(22) cm- 3. For both types of nanowires, mobility decreases with increasing carrier concentration, consistent with transport limited by impurity scattering.
publishDate 2006
dc.date.none.fl_str_mv 2006-09-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600007
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600007
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97332006000600007
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.36 n.3b 2006
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
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