Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering
Autor(a) principal: | |
---|---|
Data de Publicação: | 2010 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Brazilian Journal of Physics |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000300015 |
Resumo: | In this work is investigated the optimal conditions for deposition of pure- phase anatase and rutile thin films prepared at low temperatures (less than 150ºC) by reactive dc magnetron sputtering onto well- cleaned p- type Si substrates. For this, the variation of deposition plasma parameters as substrate- to- target distance, total gas pressure, oxygen concentration, and substrate bias were studied and correlated with the characteristics of the deposited films. The XRD analysis indicates the formation of pure rutile phase when the substrate is biased at voltages between - 200 and - 300 V. Pure anatase phase is only attained when the total pressure is higher than 0.7 Pa. Moreover, it's noticeable a strong dependence of surface roughness with parameters studied. |
id |
SBF-2_d82f473df120257188e0936da53a9c9c |
---|---|
oai_identifier_str |
oai:scielo:S0103-97332010000300015 |
network_acronym_str |
SBF-2 |
network_name_str |
Brazilian Journal of Physics |
repository_id_str |
|
spelling |
Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputteringtitanium dioxidemagnetron sputteringX- ray diffractionAtomic force microscopyIn this work is investigated the optimal conditions for deposition of pure- phase anatase and rutile thin films prepared at low temperatures (less than 150ºC) by reactive dc magnetron sputtering onto well- cleaned p- type Si substrates. For this, the variation of deposition plasma parameters as substrate- to- target distance, total gas pressure, oxygen concentration, and substrate bias were studied and correlated with the characteristics of the deposited films. The XRD analysis indicates the formation of pure rutile phase when the substrate is biased at voltages between - 200 and - 300 V. Pure anatase phase is only attained when the total pressure is higher than 0.7 Pa. Moreover, it's noticeable a strong dependence of surface roughness with parameters studied.Sociedade Brasileira de Física2010-09-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000300015Brazilian Journal of Physics v.40 n.3 2010reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332010000300015info:eu-repo/semantics/openAccessToku,H.Pessoa,R.S.Maciel,H.S.Massi,M.Mengui,U.A.eng2010-09-27T00:00:00Zoai:scielo:S0103-97332010000300015Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2010-09-27T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false |
dc.title.none.fl_str_mv |
Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering |
title |
Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering |
spellingShingle |
Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering Toku,H. titanium dioxide magnetron sputtering X- ray diffraction Atomic force microscopy |
title_short |
Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering |
title_full |
Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering |
title_fullStr |
Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering |
title_full_unstemmed |
Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering |
title_sort |
Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering |
author |
Toku,H. |
author_facet |
Toku,H. Pessoa,R.S. Maciel,H.S. Massi,M. Mengui,U.A. |
author_role |
author |
author2 |
Pessoa,R.S. Maciel,H.S. Massi,M. Mengui,U.A. |
author2_role |
author author author author |
dc.contributor.author.fl_str_mv |
Toku,H. Pessoa,R.S. Maciel,H.S. Massi,M. Mengui,U.A. |
dc.subject.por.fl_str_mv |
titanium dioxide magnetron sputtering X- ray diffraction Atomic force microscopy |
topic |
titanium dioxide magnetron sputtering X- ray diffraction Atomic force microscopy |
description |
In this work is investigated the optimal conditions for deposition of pure- phase anatase and rutile thin films prepared at low temperatures (less than 150ºC) by reactive dc magnetron sputtering onto well- cleaned p- type Si substrates. For this, the variation of deposition plasma parameters as substrate- to- target distance, total gas pressure, oxygen concentration, and substrate bias were studied and correlated with the characteristics of the deposited films. The XRD analysis indicates the formation of pure rutile phase when the substrate is biased at voltages between - 200 and - 300 V. Pure anatase phase is only attained when the total pressure is higher than 0.7 Pa. Moreover, it's noticeable a strong dependence of surface roughness with parameters studied. |
publishDate |
2010 |
dc.date.none.fl_str_mv |
2010-09-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000300015 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000300015 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/S0103-97332010000300015 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
dc.source.none.fl_str_mv |
Brazilian Journal of Physics v.40 n.3 2010 reponame:Brazilian Journal of Physics instname:Sociedade Brasileira de Física (SBF) instacron:SBF |
instname_str |
Sociedade Brasileira de Física (SBF) |
instacron_str |
SBF |
institution |
SBF |
reponame_str |
Brazilian Journal of Physics |
collection |
Brazilian Journal of Physics |
repository.name.fl_str_mv |
Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF) |
repository.mail.fl_str_mv |
sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br |
_version_ |
1754734865427726336 |