Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering

Detalhes bibliográficos
Autor(a) principal: Toku,H.
Data de Publicação: 2010
Outros Autores: Pessoa,R.S., Maciel,H.S., Massi,M., Mengui,U.A.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000300015
Resumo: In this work is investigated the optimal conditions for deposition of pure- phase anatase and rutile thin films prepared at low temperatures (less than 150ºC) by reactive dc magnetron sputtering onto well- cleaned p- type Si substrates. For this, the variation of deposition plasma parameters as substrate- to- target distance, total gas pressure, oxygen concentration, and substrate bias were studied and correlated with the characteristics of the deposited films. The XRD analysis indicates the formation of pure rutile phase when the substrate is biased at voltages between - 200 and - 300 V. Pure anatase phase is only attained when the total pressure is higher than 0.7 Pa. Moreover, it's noticeable a strong dependence of surface roughness with parameters studied.
id SBF-2_d82f473df120257188e0936da53a9c9c
oai_identifier_str oai:scielo:S0103-97332010000300015
network_acronym_str SBF-2
network_name_str Brazilian Journal of Physics
repository_id_str
spelling Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputteringtitanium dioxidemagnetron sputteringX- ray diffractionAtomic force microscopyIn this work is investigated the optimal conditions for deposition of pure- phase anatase and rutile thin films prepared at low temperatures (less than 150ºC) by reactive dc magnetron sputtering onto well- cleaned p- type Si substrates. For this, the variation of deposition plasma parameters as substrate- to- target distance, total gas pressure, oxygen concentration, and substrate bias were studied and correlated with the characteristics of the deposited films. The XRD analysis indicates the formation of pure rutile phase when the substrate is biased at voltages between - 200 and - 300 V. Pure anatase phase is only attained when the total pressure is higher than 0.7 Pa. Moreover, it's noticeable a strong dependence of surface roughness with parameters studied.Sociedade Brasileira de Física2010-09-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000300015Brazilian Journal of Physics v.40 n.3 2010reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332010000300015info:eu-repo/semantics/openAccessToku,H.Pessoa,R.S.Maciel,H.S.Massi,M.Mengui,U.A.eng2010-09-27T00:00:00Zoai:scielo:S0103-97332010000300015Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2010-09-27T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering
title Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering
spellingShingle Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering
Toku,H.
titanium dioxide
magnetron sputtering
X- ray diffraction
Atomic force microscopy
title_short Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering
title_full Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering
title_fullStr Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering
title_full_unstemmed Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering
title_sort Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering
author Toku,H.
author_facet Toku,H.
Pessoa,R.S.
Maciel,H.S.
Massi,M.
Mengui,U.A.
author_role author
author2 Pessoa,R.S.
Maciel,H.S.
Massi,M.
Mengui,U.A.
author2_role author
author
author
author
dc.contributor.author.fl_str_mv Toku,H.
Pessoa,R.S.
Maciel,H.S.
Massi,M.
Mengui,U.A.
dc.subject.por.fl_str_mv titanium dioxide
magnetron sputtering
X- ray diffraction
Atomic force microscopy
topic titanium dioxide
magnetron sputtering
X- ray diffraction
Atomic force microscopy
description In this work is investigated the optimal conditions for deposition of pure- phase anatase and rutile thin films prepared at low temperatures (less than 150ºC) by reactive dc magnetron sputtering onto well- cleaned p- type Si substrates. For this, the variation of deposition plasma parameters as substrate- to- target distance, total gas pressure, oxygen concentration, and substrate bias were studied and correlated with the characteristics of the deposited films. The XRD analysis indicates the formation of pure rutile phase when the substrate is biased at voltages between - 200 and - 300 V. Pure anatase phase is only attained when the total pressure is higher than 0.7 Pa. Moreover, it's noticeable a strong dependence of surface roughness with parameters studied.
publishDate 2010
dc.date.none.fl_str_mv 2010-09-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000300015
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000300015
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97332010000300015
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.40 n.3 2010
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
_version_ 1754734865427726336