Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator

Detalhes bibliográficos
Autor(a) principal: Sarma,R.
Data de Publicação: 2010
Outros Autores: Saikia,D., Saikia,Puja, Saikia,P.K., Baishya,B.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000300019
Resumo: We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with High-k Dielectric Nd2O3. Use of high dielectric constant (high-k) gate insulator Nd2O3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 × 10(4) and mobility is 0.13cm²/V.s. Pentacene film is deposited on Nd2O3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature.
id SBF-2_e00b19cb4109635b85d7526d46514243
oai_identifier_str oai:scielo:S0103-97332010000300019
network_acronym_str SBF-2
network_name_str Brazilian Journal of Physics
repository_id_str
spelling Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulatorPentaceneOrganic Thin Film TransistorsLow Threshold voltageRare earth oxide Nd2O3Two Step DepositionWe have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with High-k Dielectric Nd2O3. Use of high dielectric constant (high-k) gate insulator Nd2O3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 × 10(4) and mobility is 0.13cm²/V.s. Pentacene film is deposited on Nd2O3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature.Sociedade Brasileira de Física2010-09-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000300019Brazilian Journal of Physics v.40 n.3 2010reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332010000300019info:eu-repo/semantics/openAccessSarma,R.Saikia,D.Saikia,PujaSaikia,P.K.Baishya,B.eng2010-09-27T00:00:00Zoai:scielo:S0103-97332010000300019Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2010-09-27T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator
title Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator
spellingShingle Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator
Sarma,R.
Pentacene
Organic Thin Film Transistors
Low Threshold voltage
Rare earth oxide Nd2O3
Two Step Deposition
title_short Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator
title_full Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator
title_fullStr Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator
title_full_unstemmed Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator
title_sort Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator
author Sarma,R.
author_facet Sarma,R.
Saikia,D.
Saikia,Puja
Saikia,P.K.
Baishya,B.
author_role author
author2 Saikia,D.
Saikia,Puja
Saikia,P.K.
Baishya,B.
author2_role author
author
author
author
dc.contributor.author.fl_str_mv Sarma,R.
Saikia,D.
Saikia,Puja
Saikia,P.K.
Baishya,B.
dc.subject.por.fl_str_mv Pentacene
Organic Thin Film Transistors
Low Threshold voltage
Rare earth oxide Nd2O3
Two Step Deposition
topic Pentacene
Organic Thin Film Transistors
Low Threshold voltage
Rare earth oxide Nd2O3
Two Step Deposition
description We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with High-k Dielectric Nd2O3. Use of high dielectric constant (high-k) gate insulator Nd2O3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 × 10(4) and mobility is 0.13cm²/V.s. Pentacene film is deposited on Nd2O3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature.
publishDate 2010
dc.date.none.fl_str_mv 2010-09-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000300019
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000300019
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97332010000300019
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.40 n.3 2010
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
_version_ 1754734865432969216

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