Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator
Autor(a) principal: | |
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Data de Publicação: | 2010 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Brazilian Journal of Physics |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000300019 |
Resumo: | We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with High-k Dielectric Nd2O3. Use of high dielectric constant (high-k) gate insulator Nd2O3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 × 10(4) and mobility is 0.13cm²/V.s. Pentacene film is deposited on Nd2O3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature. |
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Brazilian Journal of Physics |
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Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulatorPentaceneOrganic Thin Film TransistorsLow Threshold voltageRare earth oxide Nd2O3Two Step DepositionWe have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with High-k Dielectric Nd2O3. Use of high dielectric constant (high-k) gate insulator Nd2O3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 × 10(4) and mobility is 0.13cm²/V.s. Pentacene film is deposited on Nd2O3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature.Sociedade Brasileira de Física2010-09-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000300019Brazilian Journal of Physics v.40 n.3 2010reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332010000300019info:eu-repo/semantics/openAccessSarma,R.Saikia,D.Saikia,PujaSaikia,P.K.Baishya,B.eng2010-09-27T00:00:00Zoai:scielo:S0103-97332010000300019Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2010-09-27T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false |
dc.title.none.fl_str_mv |
Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator |
title |
Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator |
spellingShingle |
Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator Sarma,R. Pentacene Organic Thin Film Transistors Low Threshold voltage Rare earth oxide Nd2O3 Two Step Deposition |
title_short |
Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator |
title_full |
Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator |
title_fullStr |
Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator |
title_full_unstemmed |
Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator |
title_sort |
Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator |
author |
Sarma,R. |
author_facet |
Sarma,R. Saikia,D. Saikia,Puja Saikia,P.K. Baishya,B. |
author_role |
author |
author2 |
Saikia,D. Saikia,Puja Saikia,P.K. Baishya,B. |
author2_role |
author author author author |
dc.contributor.author.fl_str_mv |
Sarma,R. Saikia,D. Saikia,Puja Saikia,P.K. Baishya,B. |
dc.subject.por.fl_str_mv |
Pentacene Organic Thin Film Transistors Low Threshold voltage Rare earth oxide Nd2O3 Two Step Deposition |
topic |
Pentacene Organic Thin Film Transistors Low Threshold voltage Rare earth oxide Nd2O3 Two Step Deposition |
description |
We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with High-k Dielectric Nd2O3. Use of high dielectric constant (high-k) gate insulator Nd2O3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 × 10(4) and mobility is 0.13cm²/V.s. Pentacene film is deposited on Nd2O3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature. |
publishDate |
2010 |
dc.date.none.fl_str_mv |
2010-09-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000300019 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000300019 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/S0103-97332010000300019 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
dc.source.none.fl_str_mv |
Brazilian Journal of Physics v.40 n.3 2010 reponame:Brazilian Journal of Physics instname:Sociedade Brasileira de Física (SBF) instacron:SBF |
instname_str |
Sociedade Brasileira de Física (SBF) |
instacron_str |
SBF |
institution |
SBF |
reponame_str |
Brazilian Journal of Physics |
collection |
Brazilian Journal of Physics |
repository.name.fl_str_mv |
Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF) |
repository.mail.fl_str_mv |
sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br |
_version_ |
1754734865432969216 |