MBE growth and characterization of Sn1-xEu xTe
Autor(a) principal: | |
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Data de Publicação: | 2004 |
Outros Autores: | , , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Brazilian Journal of Physics |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400039 |
Resumo: | Epilayers of Sn1-xEu xTe (0 < x < 0:03) were grown by molecular beam epitaxy on freshly cleaved BaF2(111) substrates and their structural, electrical and optical properties were investigated. The thicknesses of epilayers were about 1.5 mum and deposition was carried out at growth temperatures of 300 ºC. The structural properties were investigated by high resolution X-ray diffraction and a sharp film degradation could be observed with increasing europium content. Electrical measurements with temperature varying from 300 to 10K indicated that the epilayers present carrier concentration ranging between 3 x 10(20) and 6 x 10(20)cm-3 and a low resistivity from 6.3 x 10-5 to 1.2 x 10-4 omega.cm. From optical measurements it could be seen that spectra present a low energy edge corresponding to the beginning of intra band excitations and the high energy edge due to inter band excitations. |
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Brazilian Journal of Physics |
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MBE growth and characterization of Sn1-xEu xTeEpilayers of Sn1-xEu xTe (0 < x < 0:03) were grown by molecular beam epitaxy on freshly cleaved BaF2(111) substrates and their structural, electrical and optical properties were investigated. The thicknesses of epilayers were about 1.5 mum and deposition was carried out at growth temperatures of 300 ºC. The structural properties were investigated by high resolution X-ray diffraction and a sharp film degradation could be observed with increasing europium content. Electrical measurements with temperature varying from 300 to 10K indicated that the epilayers present carrier concentration ranging between 3 x 10(20) and 6 x 10(20)cm-3 and a low resistivity from 6.3 x 10-5 to 1.2 x 10-4 omega.cm. From optical measurements it could be seen that spectra present a low energy edge corresponding to the beginning of intra band excitations and the high energy edge due to inter band excitations.Sociedade Brasileira de Física2004-06-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400039Brazilian Journal of Physics v.34 n.2b 2004reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332004000400039info:eu-repo/semantics/openAccessUeta,A. Y.Rappl,P. H. O.Closs,H.Motisuke,P.Abramof,E.Anjos,V. R. dosChitta,V. A.Coaquira,J. A.Oliveira Jr.,N. F.Bauer,G.eng2004-08-31T00:00:00Zoai:scielo:S0103-97332004000400039Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2004-08-31T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false |
dc.title.none.fl_str_mv |
MBE growth and characterization of Sn1-xEu xTe |
title |
MBE growth and characterization of Sn1-xEu xTe |
spellingShingle |
MBE growth and characterization of Sn1-xEu xTe Ueta,A. Y. |
title_short |
MBE growth and characterization of Sn1-xEu xTe |
title_full |
MBE growth and characterization of Sn1-xEu xTe |
title_fullStr |
MBE growth and characterization of Sn1-xEu xTe |
title_full_unstemmed |
MBE growth and characterization of Sn1-xEu xTe |
title_sort |
MBE growth and characterization of Sn1-xEu xTe |
author |
Ueta,A. Y. |
author_facet |
Ueta,A. Y. Rappl,P. H. O. Closs,H. Motisuke,P. Abramof,E. Anjos,V. R. dos Chitta,V. A. Coaquira,J. A. Oliveira Jr.,N. F. Bauer,G. |
author_role |
author |
author2 |
Rappl,P. H. O. Closs,H. Motisuke,P. Abramof,E. Anjos,V. R. dos Chitta,V. A. Coaquira,J. A. Oliveira Jr.,N. F. Bauer,G. |
author2_role |
author author author author author author author author author |
dc.contributor.author.fl_str_mv |
Ueta,A. Y. Rappl,P. H. O. Closs,H. Motisuke,P. Abramof,E. Anjos,V. R. dos Chitta,V. A. Coaquira,J. A. Oliveira Jr.,N. F. Bauer,G. |
description |
Epilayers of Sn1-xEu xTe (0 < x < 0:03) were grown by molecular beam epitaxy on freshly cleaved BaF2(111) substrates and their structural, electrical and optical properties were investigated. The thicknesses of epilayers were about 1.5 mum and deposition was carried out at growth temperatures of 300 ºC. The structural properties were investigated by high resolution X-ray diffraction and a sharp film degradation could be observed with increasing europium content. Electrical measurements with temperature varying from 300 to 10K indicated that the epilayers present carrier concentration ranging between 3 x 10(20) and 6 x 10(20)cm-3 and a low resistivity from 6.3 x 10-5 to 1.2 x 10-4 omega.cm. From optical measurements it could be seen that spectra present a low energy edge corresponding to the beginning of intra band excitations and the high energy edge due to inter band excitations. |
publishDate |
2004 |
dc.date.none.fl_str_mv |
2004-06-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400039 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400039 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/S0103-97332004000400039 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
dc.source.none.fl_str_mv |
Brazilian Journal of Physics v.34 n.2b 2004 reponame:Brazilian Journal of Physics instname:Sociedade Brasileira de Física (SBF) instacron:SBF |
instname_str |
Sociedade Brasileira de Física (SBF) |
instacron_str |
SBF |
institution |
SBF |
reponame_str |
Brazilian Journal of Physics |
collection |
Brazilian Journal of Physics |
repository.name.fl_str_mv |
Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF) |
repository.mail.fl_str_mv |
sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br |
_version_ |
1754734861070893056 |