MBE growth and characterization of Sn1-xEu xTe

• Autor(a) principal: Ueta,A. Y.
• Data de Publicação: 2004
• Outros Autores: Rappl,P. H. O., Closs,H., Motisuke,P., Abramof,E., Anjos,V. R. dos, Chitta,V. A., Coaquira,J. A., Oliveira Jr.,N. F., Bauer,G.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Brazilian Journal of Physics
• Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400039

Epilayers of Sn1-xEu xTe (0 < x < 0:03) were grown by molecular beam epitaxy on freshly cleaved BaF2(111) substrates and their structural, electrical and optical properties were investigated. The thicknesses of epilayers were about 1.5 mum and deposition was carried out at growth temperatures of 300 ºC. The structural properties were investigated by high resolution X-ray diffraction and a sharp film degradation could be observed with increasing europium content. Electrical measurements with temperature varying from 300 to 10K indicated that the epilayers present carrier concentration ranging between 3 x 10(20) and 6 x 10(20)cm-3 and a low resistivity from 6.3 x 10-5 to 1.2 x 10-4 omega.cm. From optical measurements it could be seen that spectra present a low energy edge corresponding to the beginning of intra band excitations and the high energy edge due to inter band excitations.