Effect of the dot-dot interaction strength on the conductance of side-connected quantum dots

Detalhes bibliográficos
Autor(a) principal: Davidovich,Maria A.
Data de Publicação: 2006
Outros Autores: Apel,V. M., Anda,E. V.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600033
Resumo: The conductance of two interacting dots connected to leads is studied. The configuration is such that one dot is embedded into the leads while the other is tunneling-coupled only to the first dot. The effect of the tunneling interaction strength on the conductance is discussed. As the two dot levels cross the Fermi level the low temperature conductance of the system cancels out, due to interference effects. This cancellation persists over a range of gate potential that depends upon the interaction strength: the greater the interaction the larger the range of gate potential where the current vanishes.
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spelling Effect of the dot-dot interaction strength on the conductance of side-connected quantum dotsDouble-dotConductanceKondo effectThe conductance of two interacting dots connected to leads is studied. The configuration is such that one dot is embedded into the leads while the other is tunneling-coupled only to the first dot. The effect of the tunneling interaction strength on the conductance is discussed. As the two dot levels cross the Fermi level the low temperature conductance of the system cancels out, due to interference effects. This cancellation persists over a range of gate potential that depends upon the interaction strength: the greater the interaction the larger the range of gate potential where the current vanishes.Sociedade Brasileira de Física2006-09-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600033Brazilian Journal of Physics v.36 n.3b 2006reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332006000600033info:eu-repo/semantics/openAccessDavidovich,Maria A.Apel,V. M.Anda,E. V.eng2006-11-29T00:00:00Zoai:scielo:S0103-97332006000600033Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2006-11-29T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Effect of the dot-dot interaction strength on the conductance of side-connected quantum dots
title Effect of the dot-dot interaction strength on the conductance of side-connected quantum dots
spellingShingle Effect of the dot-dot interaction strength on the conductance of side-connected quantum dots
Davidovich,Maria A.
Double-dot
Conductance
Kondo effect
title_short Effect of the dot-dot interaction strength on the conductance of side-connected quantum dots
title_full Effect of the dot-dot interaction strength on the conductance of side-connected quantum dots
title_fullStr Effect of the dot-dot interaction strength on the conductance of side-connected quantum dots
title_full_unstemmed Effect of the dot-dot interaction strength on the conductance of side-connected quantum dots
title_sort Effect of the dot-dot interaction strength on the conductance of side-connected quantum dots
author Davidovich,Maria A.
author_facet Davidovich,Maria A.
Apel,V. M.
Anda,E. V.
author_role author
author2 Apel,V. M.
Anda,E. V.
author2_role author
author
dc.contributor.author.fl_str_mv Davidovich,Maria A.
Apel,V. M.
Anda,E. V.
dc.subject.por.fl_str_mv Double-dot
Conductance
Kondo effect
topic Double-dot
Conductance
Kondo effect
description The conductance of two interacting dots connected to leads is studied. The configuration is such that one dot is embedded into the leads while the other is tunneling-coupled only to the first dot. The effect of the tunneling interaction strength on the conductance is discussed. As the two dot levels cross the Fermi level the low temperature conductance of the system cancels out, due to interference effects. This cancellation persists over a range of gate potential that depends upon the interaction strength: the greater the interaction the larger the range of gate potential where the current vanishes.
publishDate 2006
dc.date.none.fl_str_mv 2006-09-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600033
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600033
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97332006000600033
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.36 n.3b 2006
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
_version_ 1754734863341060097

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