Growth of CaF2 buffer on Si using low energy cluster beam deposition technique and study of its properties

Detalhes bibliográficos
Autor(a) principal: Bhagwat,S.S.
Data de Publicação: 1999
Outros Autores: Bhangale,A.R., Patil,J.M., Shirodkar,V.S., Pinto,R., Apte,P.R., Pai,S.P.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000200020
Resumo: Calcium Fluoride buffer lavers were grown on Si < 100 > substrates using the low energy cluster beam deposition technique. The films were annealed at various temperatures ranging between 500oC and 700oC. The SEM studies showed that as-deposited films were well oriented along the c-axis and had very smooth surface morphology. The annealed films on the contarary, showed lowering of peak intensities and roughening of the surface. The dielectric constant derived from the C-V measurements at 1 MHz were 2.01 and 18 for as-deposited and annealed films respectively.
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spelling Growth of CaF2 buffer on Si using low energy cluster beam deposition technique and study of its propertiesCalcium Fluoride buffer lavers were grown on Si < 100 > substrates using the low energy cluster beam deposition technique. The films were annealed at various temperatures ranging between 500oC and 700oC. The SEM studies showed that as-deposited films were well oriented along the c-axis and had very smooth surface morphology. The annealed films on the contarary, showed lowering of peak intensities and roughening of the surface. The dielectric constant derived from the C-V measurements at 1 MHz were 2.01 and 18 for as-deposited and annealed films respectively.Sociedade Brasileira de Física1999-06-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000200020Brazilian Journal of Physics v.29 n.2 1999reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97331999000200020info:eu-repo/semantics/openAccessBhagwat,S.S.Bhangale,A.R.Patil,J.M.Shirodkar,V.S.Pinto,R.Apte,P.R.Pai,S.P.eng1999-10-08T00:00:00Zoai:scielo:S0103-97331999000200020Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:1999-10-08T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Growth of CaF2 buffer on Si using low energy cluster beam deposition technique and study of its properties
title Growth of CaF2 buffer on Si using low energy cluster beam deposition technique and study of its properties
spellingShingle Growth of CaF2 buffer on Si using low energy cluster beam deposition technique and study of its properties
Bhagwat,S.S.
title_short Growth of CaF2 buffer on Si using low energy cluster beam deposition technique and study of its properties
title_full Growth of CaF2 buffer on Si using low energy cluster beam deposition technique and study of its properties
title_fullStr Growth of CaF2 buffer on Si using low energy cluster beam deposition technique and study of its properties
title_full_unstemmed Growth of CaF2 buffer on Si using low energy cluster beam deposition technique and study of its properties
title_sort Growth of CaF2 buffer on Si using low energy cluster beam deposition technique and study of its properties
author Bhagwat,S.S.
author_facet Bhagwat,S.S.
Bhangale,A.R.
Patil,J.M.
Shirodkar,V.S.
Pinto,R.
Apte,P.R.
Pai,S.P.
author_role author
author2 Bhangale,A.R.
Patil,J.M.
Shirodkar,V.S.
Pinto,R.
Apte,P.R.
Pai,S.P.
author2_role author
author
author
author
author
author
dc.contributor.author.fl_str_mv Bhagwat,S.S.
Bhangale,A.R.
Patil,J.M.
Shirodkar,V.S.
Pinto,R.
Apte,P.R.
Pai,S.P.
description Calcium Fluoride buffer lavers were grown on Si < 100 > substrates using the low energy cluster beam deposition technique. The films were annealed at various temperatures ranging between 500oC and 700oC. The SEM studies showed that as-deposited films were well oriented along the c-axis and had very smooth surface morphology. The annealed films on the contarary, showed lowering of peak intensities and roughening of the surface. The dielectric constant derived from the C-V measurements at 1 MHz were 2.01 and 18 for as-deposited and annealed films respectively.
publishDate 1999
dc.date.none.fl_str_mv 1999-06-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000200020
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000200020
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97331999000200020
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.29 n.2 1999
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
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