Ambipolar carrier diffusion in In0.53Ga0.47As single quantum wells

Detalhes bibliográficos
Autor(a) principal: Monte,A.F.G.
Data de Publicação: 1999
Outros Autores: Silva,S.W. da, Cruz,J.M.R., Morais,P.C., Cox,H.M.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400014
Resumo: The microluminescence surface scan technique (MSST) has been used to investigate photocarrier diffusion in undoped In0.53Ga0.47 As - InP single quantum well (QW), in the temperature (T) range from 15 K to 295 K. Narrowing of the photoluminescence (PL) spatial profile is observed as the temperature is lowered, indicating reduction of the photocarrier diffusion length upon cooling. It was found that the width of the PL spatial profile follows a linear function of temperature, but a change in slope by a factor of 2.6 is observed at about 200 K, indicating a change of the dominant carrier scattering mechanism. In the temperature range of 15 K to 200 K, the ambipolar photocarrier diffusion mechanism seems to be correlated to impurity states thermally activated.
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spelling Ambipolar carrier diffusion in In0.53Ga0.47As single quantum wellsThe microluminescence surface scan technique (MSST) has been used to investigate photocarrier diffusion in undoped In0.53Ga0.47 As - InP single quantum well (QW), in the temperature (T) range from 15 K to 295 K. Narrowing of the photoluminescence (PL) spatial profile is observed as the temperature is lowered, indicating reduction of the photocarrier diffusion length upon cooling. It was found that the width of the PL spatial profile follows a linear function of temperature, but a change in slope by a factor of 2.6 is observed at about 200 K, indicating a change of the dominant carrier scattering mechanism. In the temperature range of 15 K to 200 K, the ambipolar photocarrier diffusion mechanism seems to be correlated to impurity states thermally activated.Sociedade Brasileira de Física1999-12-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400014Brazilian Journal of Physics v.29 n.4 1999reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97331999000400014info:eu-repo/semantics/openAccessMonte,A.F.G.Silva,S.W. daCruz,J.M.R.Morais,P.C.Cox,H.M.eng2001-02-23T00:00:00Zoai:scielo:S0103-97331999000400014Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2001-02-23T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Ambipolar carrier diffusion in In0.53Ga0.47As single quantum wells
title Ambipolar carrier diffusion in In0.53Ga0.47As single quantum wells
spellingShingle Ambipolar carrier diffusion in In0.53Ga0.47As single quantum wells
Monte,A.F.G.
title_short Ambipolar carrier diffusion in In0.53Ga0.47As single quantum wells
title_full Ambipolar carrier diffusion in In0.53Ga0.47As single quantum wells
title_fullStr Ambipolar carrier diffusion in In0.53Ga0.47As single quantum wells
title_full_unstemmed Ambipolar carrier diffusion in In0.53Ga0.47As single quantum wells
title_sort Ambipolar carrier diffusion in In0.53Ga0.47As single quantum wells
author Monte,A.F.G.
author_facet Monte,A.F.G.
Silva,S.W. da
Cruz,J.M.R.
Morais,P.C.
Cox,H.M.
author_role author
author2 Silva,S.W. da
Cruz,J.M.R.
Morais,P.C.
Cox,H.M.
author2_role author
author
author
author
dc.contributor.author.fl_str_mv Monte,A.F.G.
Silva,S.W. da
Cruz,J.M.R.
Morais,P.C.
Cox,H.M.
description The microluminescence surface scan technique (MSST) has been used to investigate photocarrier diffusion in undoped In0.53Ga0.47 As - InP single quantum well (QW), in the temperature (T) range from 15 K to 295 K. Narrowing of the photoluminescence (PL) spatial profile is observed as the temperature is lowered, indicating reduction of the photocarrier diffusion length upon cooling. It was found that the width of the PL spatial profile follows a linear function of temperature, but a change in slope by a factor of 2.6 is observed at about 200 K, indicating a change of the dominant carrier scattering mechanism. In the temperature range of 15 K to 200 K, the ambipolar photocarrier diffusion mechanism seems to be correlated to impurity states thermally activated.
publishDate 1999
dc.date.none.fl_str_mv 1999-12-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400014
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400014
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97331999000400014
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.29 n.4 1999
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
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