Manufactured silicon diode used as an internal conversion electrons detector

Detalhes bibliográficos
Autor(a) principal: Corrêa,A. A. S.
Data de Publicação: 2004
Outros Autores: Bueno,Carmen C., Gonçalves,Josemary A.C., Mendes,P. F. P. Rato, Pinto,J. K. C., Souza,J. P. de, Santos,M. D. de S.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000500073
Resumo: In this work we have studied the direct detection and spectrometric capabilities for internal conversion electrons of an ion-implanted diode, developed in the framework of R&D programs at CERN, envisaging its use in an electron-gamma coincidence system for nuclear parameters measurements. The best energy resolution obtained until now, 12.6 keV (FWHM) for the 133Ba 320.32 keV electron emission, is sufficiently good to justify the use of this diode for spectrometry of low energy electrons.
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spelling Manufactured silicon diode used as an internal conversion electrons detectorIn this work we have studied the direct detection and spectrometric capabilities for internal conversion electrons of an ion-implanted diode, developed in the framework of R&D programs at CERN, envisaging its use in an electron-gamma coincidence system for nuclear parameters measurements. The best energy resolution obtained until now, 12.6 keV (FWHM) for the 133Ba 320.32 keV electron emission, is sufficiently good to justify the use of this diode for spectrometry of low energy electrons.Sociedade Brasileira de Física2004-09-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000500073Brazilian Journal of Physics v.34 n.3a 2004reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332004000500073info:eu-repo/semantics/openAccessCorrêa,A. A. S.Bueno,Carmen C.Gonçalves,Josemary A.C.Mendes,P. F. P. RatoPinto,J. K. C.Souza,J. P. deSantos,M. D. de S.eng2004-10-26T00:00:00Zoai:scielo:S0103-97332004000500073Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2004-10-26T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Manufactured silicon diode used as an internal conversion electrons detector
title Manufactured silicon diode used as an internal conversion electrons detector
spellingShingle Manufactured silicon diode used as an internal conversion electrons detector
Corrêa,A. A. S.
title_short Manufactured silicon diode used as an internal conversion electrons detector
title_full Manufactured silicon diode used as an internal conversion electrons detector
title_fullStr Manufactured silicon diode used as an internal conversion electrons detector
title_full_unstemmed Manufactured silicon diode used as an internal conversion electrons detector
title_sort Manufactured silicon diode used as an internal conversion electrons detector
author Corrêa,A. A. S.
author_facet Corrêa,A. A. S.
Bueno,Carmen C.
Gonçalves,Josemary A.C.
Mendes,P. F. P. Rato
Pinto,J. K. C.
Souza,J. P. de
Santos,M. D. de S.
author_role author
author2 Bueno,Carmen C.
Gonçalves,Josemary A.C.
Mendes,P. F. P. Rato
Pinto,J. K. C.
Souza,J. P. de
Santos,M. D. de S.
author2_role author
author
author
author
author
author
dc.contributor.author.fl_str_mv Corrêa,A. A. S.
Bueno,Carmen C.
Gonçalves,Josemary A.C.
Mendes,P. F. P. Rato
Pinto,J. K. C.
Souza,J. P. de
Santos,M. D. de S.
description In this work we have studied the direct detection and spectrometric capabilities for internal conversion electrons of an ion-implanted diode, developed in the framework of R&D programs at CERN, envisaging its use in an electron-gamma coincidence system for nuclear parameters measurements. The best energy resolution obtained until now, 12.6 keV (FWHM) for the 133Ba 320.32 keV electron emission, is sufficiently good to justify the use of this diode for spectrometry of low energy electrons.
publishDate 2004
dc.date.none.fl_str_mv 2004-09-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000500073
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000500073
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97332004000500073
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.34 n.3a 2004
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
_version_ 1754734861509197824

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