Manufactured silicon diode used as an internal conversion electrons detector
Autor(a) principal: | |
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Data de Publicação: | 2004 |
Outros Autores: | , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Brazilian Journal of Physics |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000500073 |
Resumo: | In this work we have studied the direct detection and spectrometric capabilities for internal conversion electrons of an ion-implanted diode, developed in the framework of R&D programs at CERN, envisaging its use in an electron-gamma coincidence system for nuclear parameters measurements. The best energy resolution obtained until now, 12.6 keV (FWHM) for the 133Ba 320.32 keV electron emission, is sufficiently good to justify the use of this diode for spectrometry of low energy electrons. |
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Brazilian Journal of Physics |
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Manufactured silicon diode used as an internal conversion electrons detectorIn this work we have studied the direct detection and spectrometric capabilities for internal conversion electrons of an ion-implanted diode, developed in the framework of R&D programs at CERN, envisaging its use in an electron-gamma coincidence system for nuclear parameters measurements. The best energy resolution obtained until now, 12.6 keV (FWHM) for the 133Ba 320.32 keV electron emission, is sufficiently good to justify the use of this diode for spectrometry of low energy electrons.Sociedade Brasileira de Física2004-09-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000500073Brazilian Journal of Physics v.34 n.3a 2004reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332004000500073info:eu-repo/semantics/openAccessCorrêa,A. A. S.Bueno,Carmen C.Gonçalves,Josemary A.C.Mendes,P. F. P. RatoPinto,J. K. C.Souza,J. P. deSantos,M. D. de S.eng2004-10-26T00:00:00Zoai:scielo:S0103-97332004000500073Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2004-10-26T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false |
dc.title.none.fl_str_mv |
Manufactured silicon diode used as an internal conversion electrons detector |
title |
Manufactured silicon diode used as an internal conversion electrons detector |
spellingShingle |
Manufactured silicon diode used as an internal conversion electrons detector Corrêa,A. A. S. |
title_short |
Manufactured silicon diode used as an internal conversion electrons detector |
title_full |
Manufactured silicon diode used as an internal conversion electrons detector |
title_fullStr |
Manufactured silicon diode used as an internal conversion electrons detector |
title_full_unstemmed |
Manufactured silicon diode used as an internal conversion electrons detector |
title_sort |
Manufactured silicon diode used as an internal conversion electrons detector |
author |
Corrêa,A. A. S. |
author_facet |
Corrêa,A. A. S. Bueno,Carmen C. Gonçalves,Josemary A.C. Mendes,P. F. P. Rato Pinto,J. K. C. Souza,J. P. de Santos,M. D. de S. |
author_role |
author |
author2 |
Bueno,Carmen C. Gonçalves,Josemary A.C. Mendes,P. F. P. Rato Pinto,J. K. C. Souza,J. P. de Santos,M. D. de S. |
author2_role |
author author author author author author |
dc.contributor.author.fl_str_mv |
Corrêa,A. A. S. Bueno,Carmen C. Gonçalves,Josemary A.C. Mendes,P. F. P. Rato Pinto,J. K. C. Souza,J. P. de Santos,M. D. de S. |
description |
In this work we have studied the direct detection and spectrometric capabilities for internal conversion electrons of an ion-implanted diode, developed in the framework of R&D programs at CERN, envisaging its use in an electron-gamma coincidence system for nuclear parameters measurements. The best energy resolution obtained until now, 12.6 keV (FWHM) for the 133Ba 320.32 keV electron emission, is sufficiently good to justify the use of this diode for spectrometry of low energy electrons. |
publishDate |
2004 |
dc.date.none.fl_str_mv |
2004-09-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000500073 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000500073 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/S0103-97332004000500073 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
dc.source.none.fl_str_mv |
Brazilian Journal of Physics v.34 n.3a 2004 reponame:Brazilian Journal of Physics instname:Sociedade Brasileira de Física (SBF) instacron:SBF |
instname_str |
Sociedade Brasileira de Física (SBF) |
instacron_str |
SBF |
institution |
SBF |
reponame_str |
Brazilian Journal of Physics |
collection |
Brazilian Journal of Physics |
repository.name.fl_str_mv |
Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF) |
repository.mail.fl_str_mv |
sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br |
_version_ |
1754734861509197824 |