Filmes finos de LaNiO3 depositados sobre substratos monocristalinos pelo método dos precursores poliméricos.

• Autor(a) principal: Mambrini, Giovanni Pimenta
• Data de Publicação: 2004
• Tipo de documento: Dissertação
• Idioma: por
• Título da fonte: Repositório Institucional da UFSCAR
• Texto Completo: https://repositorio.ufscar.br/handle/ufscar/6491
• topic: Físico-química; Filmes finos; Condutores cerâmicos; CIENCIAS EXATAS E DA TERRA::QUIMICA::FISICO-QUIMICA

This work reports a systematic study on the deposition and characterization of LaNiO3 thin films. This material is a ceramic conductor and presents a near metallic behavior, and is interesting for capacitor electrodes application in memories systems, because of the reduction of fatigue behavior. The synthesis of the precursor resin was realized by the polymeric precursor method. The films were deposited with the spin-coating technique on five different substrates: Si(100), Safire(0001), MgO(100), LaAlO3(100) and SrTiO3(100), and after they were crystallized at 700ºC for two hours in a conventional furnace or at 700ºC for ten minutes in a microwave oven. After that, the films were characterized by X ray diffraction, scanning electron microscopy, atomic force microscopy and measurements of electrical resistivity as a function of temperature. The films deposited on Si(100) were tested as electrodes for SrTiO3 capacitors, deposited with the same method. Polycrystalline and single phase LaNiO3 thin films were obtained on Si(100), Safire(0001) and MgO(100) substrates, whereas the films deposited on LaAlO3(100) and SrTiO3(100) substrates were epitaxial. The method enable a good thickness control and allows the deposition of films without cracks and very homogeneous. Electrical measurements shown a metallic behavior between 20 and 300K, and the epitaxial films have a smaller electrical resistivity, in comparison with the polycrystalline ones. The best result was obtained with the deposition on strontium titanate substrate and the measured resistivity was 250µΩcm, lower than that obtained with others methods reported in the literature. The crystallization in a microwave oven was not so satisfactory, since films with higher resistivity than that crystallized in conventional furnaces were obtained, because their morphology. However, these films are still good for an application in capacitors systems. The system Au/SrTiO3/LaNiO3/Si(100) was also studied being the lanthanum nickelate a good electrode for this system. Dielectric constant of 250 at 10 kHz was obtained which is about the same reported in the literature for this system with Pt electrodes. Dielectric constant measurements as a function of the applied potential of work shown an asymmetric behavior because the difference between the two electrodes of the capacitor. The charge imprisonment in the ceramic/electrode interface causes a reduction in the capacitance with applied potential. In this manner, a simple methodology for preparation of thin films was used resulting in good characteristics and promising for application in DRAM systems. THIN FILMS DEPOSITED ON SINGLE CRYSTAL SUBSTRATES BY THE POLIMERIC PRECURSOR METHOD: This work reports a systematic study on the deposition and characterization of LaNiO3 thin films. This material is a ceramic conductor and presents a near metallic behavior, and is interesting for capacitor electrodes application in memories systems, because of the reduction of fatigue behavior. The synthesis of the precursor resin was realized by the polymeric precursor method. The films were deposited with the spin-coating technique on five different substrates: Si(100), Safire(0001), MgO(100), LaAlO3(100) and SrTiO3(100), and after they were crystallized at 700ºC for two hours in a conventional furnace or at 700ºC for ten minutes in a microwave oven. After that, the films were characterized by X ray diffraction, scanning electron microscopy, atomic force microscopy and measurements of electrical resistivity as a function of temperature. The films deposited on Si(100) were tested as electrodes for SrTiO3 capacitors, deposited with the same method. Polycrystalline and single phase LaNiO3 thin films were obtained on Si(100), Safire(0001) and MgO(100) substrates, whereas the films deposited on LaAlO3(100) and SrTiO3(100) substrates were epitaxial. The method enable a good thickness control and allows the deposition of films without cracks and very homogeneous. Electrical measurements shown a metallic behavior between 20 and 300K, and the epitaxial films have a smaller electrical resistivity, in comparison with the polycrystalline ones. The best result was obtained with the deposition on strontium titanate substrate and the measured resistivity was 250µΩcm, lower than that obtained with others methods reported in the literature. The crystallization in a microwave oven was not so satisfactory, since films with higher resistivity than that crystallized in conventional furnaces were obtained, because their morphology. However, these films are still good for an application in capacitors systems. The system Au/SrTiO3/LaNiO3/Si(100) was also studied being the lanthanum nickelate a good electrode for this system. Dielectric constant of 250 at 10 kHz was obtained which is about the same reported in the literature for this system with Pt electrodes. Dielectric constant measurements as a function of the applied potential of work shown an asymmetric behavior because the difference between the two electrodes of the capacitor. The charge imprisonment in the ceramic/electrode interface causes a reduction in the capacitance with applied potential. In this manner, a simple methodology for preparation of thin films was used resulting in good characteristics and promising for application in DRAM systems.