Electron g factor anisotropy in asymmetric III–V semiconductor quantum wells

Detalhes bibliográficos
Autor(a) principal: Sandoval, M. A. Toloza
Data de Publicação: 2016
Outros Autores: Silva, E. A. de Andrada e, Rocca, G. C. La, Silva, Antônio Ferreira da
Tipo de documento: Artigo
Idioma: por
Título da fonte: Repositório Institucional da UFBA
Texto Completo: http://repositorio.ufba.br/ri/handle/ri/23932
Resumo: The electron effective g factor tensor in asymmetric III–V semiconductor quantum wells (AQWs) and its tuning with the structure parameters and composition are investigated with envelope-function theory and the 8´8 k · p Kane model. The spin-dependent terms in the electron effective Hamiltonian in the presence of an external magnetic field are treated as a perturbation and the g factors * ^ g and * g , for the magnetic field in the QW plane and along the growth direction, are obtained analytically as a function of the well width L. The effects of the structure inversion asymmetry (SIA) on the electron g factor are analyzed. For the g-factor main anisotropy D = *- * g g^ g in AQWs, a sign change is predicted in the narrow well limit due to SIA, which can explain recent measurements and be useful in spintronic applications. Specific results for narrow-gap AlSb InAs GaSb and AlxGa1-xAs GaAs AlyGa1-yAs AQWs are presented and discussed with the available experimental data; in particular InAs QWs are shown to not only present much larger g factors but also a larger g-factor anisotropy, and with the opposite sign with respect to GaAs QWs.
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spelling Sandoval, M. A. TolozaSilva, E. A. de Andrada eRocca, G. C. LaSilva, Antônio Ferreira da2017-08-10T15:26:40Z2017-08-10T15:26:40Z2016http://repositorio.ufba.br/ri/handle/ri/23932The electron effective g factor tensor in asymmetric III–V semiconductor quantum wells (AQWs) and its tuning with the structure parameters and composition are investigated with envelope-function theory and the 8´8 k · p Kane model. The spin-dependent terms in the electron effective Hamiltonian in the presence of an external magnetic field are treated as a perturbation and the g factors * ^ g and * g , for the magnetic field in the QW plane and along the growth direction, are obtained analytically as a function of the well width L. The effects of the structure inversion asymmetry (SIA) on the electron g factor are analyzed. For the g-factor main anisotropy D = *- * g g^ g in AQWs, a sign change is predicted in the narrow well limit due to SIA, which can explain recent measurements and be useful in spintronic applications. Specific results for narrow-gap AlSb InAs GaSb and AlxGa1-xAs GaAs AlyGa1-yAs AQWs are presented and discussed with the available experimental data; in particular InAs QWs are shown to not only present much larger g factors but also a larger g-factor anisotropy, and with the opposite sign with respect to GaAs QWs.Submitted by Renorbio (renorbioba@ufba.br) on 2017-08-09T16:23:12Z No. of bitstreams: 1 10.10880268-12423111115008.pdf: 705393 bytes, checksum: b9af194338804487a3ee1da07fb83235 (MD5)Approved for entry into archive by Delba Rosa (delba@ufba.br) on 2017-08-10T15:26:40Z (GMT) No. of bitstreams: 1 10.10880268-12423111115008.pdf: 705393 bytes, checksum: b9af194338804487a3ee1da07fb83235 (MD5)Made available in DSpace on 2017-08-10T15:26:40Z (GMT). No. of bitstreams: 1 10.10880268-12423111115008.pdf: 705393 bytes, checksum: b9af194338804487a3ee1da07fb83235 (MD5) Previous issue date: 201610.1088/0268-1242/31/11/115008reponame:Repositório Institucional da UFBAinstname:Universidade Federal da Bahia (UFBA)instacron:UFBAsemiconductor quantum wells,spin–orbit interactionelectron g factor,Electron g factor anisotropy in asymmetric III–V semiconductor quantum wellsinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleinfo:eu-repo/semantics/openAccessporORIGINAL10.10880268-12423111115008.pdf10.10880268-12423111115008.pdfapplication/pdf705393https://repositorio.ufba.br/bitstream/ri/23932/1/10.10880268-12423111115008.pdfb9af194338804487a3ee1da07fb83235MD51LICENSElicense.txtlicense.txttext/plain1383https://repositorio.ufba.br/bitstream/ri/23932/2/license.txt05eca2f01d0b3307819d0369dab18a34MD52TEXT10.10880268-12423111115008.pdf.txt10.10880268-12423111115008.pdf.txtExtracted texttext/plain35865https://repositorio.ufba.br/bitstream/ri/23932/3/10.10880268-12423111115008.pdf.txted54020ab1c33ecd939cf9d5e6a4a8dfMD53ri/239322022-02-21 00:10:36.755oai:repositorio.ufba.br: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ório InstitucionalPUBhttp://192.188.11.11:8080/oai/requestopendoar:19322022-02-21T03:10:36Repositório Institucional da UFBA - Universidade Federal da Bahia (UFBA)false
dc.title.pt_BR.fl_str_mv Electron g factor anisotropy in asymmetric III–V semiconductor quantum wells
title Electron g factor anisotropy in asymmetric III–V semiconductor quantum wells
spellingShingle Electron g factor anisotropy in asymmetric III–V semiconductor quantum wells
Sandoval, M. A. Toloza
semiconductor quantum wells,
spin–orbit interaction
electron g factor,
title_short Electron g factor anisotropy in asymmetric III–V semiconductor quantum wells
title_full Electron g factor anisotropy in asymmetric III–V semiconductor quantum wells
title_fullStr Electron g factor anisotropy in asymmetric III–V semiconductor quantum wells
title_full_unstemmed Electron g factor anisotropy in asymmetric III–V semiconductor quantum wells
title_sort Electron g factor anisotropy in asymmetric III–V semiconductor quantum wells
author Sandoval, M. A. Toloza
author_facet Sandoval, M. A. Toloza
Silva, E. A. de Andrada e
Rocca, G. C. La
Silva, Antônio Ferreira da
author_role author
author2 Silva, E. A. de Andrada e
Rocca, G. C. La
Silva, Antônio Ferreira da
author2_role author
author
author
dc.contributor.author.fl_str_mv Sandoval, M. A. Toloza
Silva, E. A. de Andrada e
Rocca, G. C. La
Silva, Antônio Ferreira da
dc.subject.por.fl_str_mv semiconductor quantum wells,
spin–orbit interaction
electron g factor,
topic semiconductor quantum wells,
spin–orbit interaction
electron g factor,
description The electron effective g factor tensor in asymmetric III–V semiconductor quantum wells (AQWs) and its tuning with the structure parameters and composition are investigated with envelope-function theory and the 8´8 k · p Kane model. The spin-dependent terms in the electron effective Hamiltonian in the presence of an external magnetic field are treated as a perturbation and the g factors * ^ g and * g , for the magnetic field in the QW plane and along the growth direction, are obtained analytically as a function of the well width L. The effects of the structure inversion asymmetry (SIA) on the electron g factor are analyzed. For the g-factor main anisotropy D = *- * g g^ g in AQWs, a sign change is predicted in the narrow well limit due to SIA, which can explain recent measurements and be useful in spintronic applications. Specific results for narrow-gap AlSb InAs GaSb and AlxGa1-xAs GaAs AlyGa1-yAs AQWs are presented and discussed with the available experimental data; in particular InAs QWs are shown to not only present much larger g factors but also a larger g-factor anisotropy, and with the opposite sign with respect to GaAs QWs.
publishDate 2016
dc.date.issued.fl_str_mv 2016
dc.date.accessioned.fl_str_mv 2017-08-10T15:26:40Z
dc.date.available.fl_str_mv 2017-08-10T15:26:40Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
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dc.identifier.uri.fl_str_mv http://repositorio.ufba.br/ri/handle/ri/23932
url http://repositorio.ufba.br/ri/handle/ri/23932
dc.language.iso.fl_str_mv por
language por
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
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institution UFBA
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