CMOS multiplier based on the relationship between drain current and inversion charge

Detalhes bibliográficos
Autor(a) principal: Machado, M. B.
Data de Publicação: 2009
Outros Autores: Cunha, A. I. A., Lacerda, L. A. de, Galup Montoro, C., Schneider, Marcio Cherem
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFBA
Texto Completo: http://repositorio.ufba.br/ri/handle/ri/13786
Resumo: Texto completo: acesso restrito. p. 239-247
id UFBA-2_5b35b6f64e44465554ec293422e4a707
oai_identifier_str oai:repositorio.ufba.br:ri/13786
network_acronym_str UFBA-2
network_name_str Repositório Institucional da UFBA
repository_id_str 1932
spelling Machado, M. B.Cunha, A. I. A.Lacerda, L. A. deGalup Montoro, C.Schneider, Marcio CheremMachado, M. B.Cunha, A. I. A.Lacerda, L. A. deGalup Montoro, C.Schneider, Marcio Cherem2013-11-19T20:33:34Z20091751-858Xhttp://repositorio.ufba.br/ri/handle/ri/13786v. 3, n. 5Texto completo: acesso restrito. p. 239-247The authors propose a four-quadrant multiplier based on a core cell that exploits the general relationship between the saturation current of an MOS transistor and the source inversion charge density, valid from weak to strong inversion. The advantages of the proposed circuit are simplicity, low distortion and feasibility of low-voltage operation. Experimental results in a 0.35 mum CMOS prototype indicate 1 mA consumption for 1 MHz bandwidth, and distortion level below 1 for an input current of 80 of the full-scale range. The multiplier core area is around 10 000 m2.Submitted by Suelen Reis (suziy.ellen@gmail.com) on 2013-09-24T14:50:18Z No. of bitstreams: 1 05285987.pdf: 607389 bytes, checksum: 7bf95c4d4e7807b789f64aef53308c9d (MD5)Approved for entry into archive by Rodrigo Meirelles (rodrigomei@ufba.br) on 2013-11-19T20:33:34Z (GMT) No. of bitstreams: 1 05285987.pdf: 607389 bytes, checksum: 7bf95c4d4e7807b789f64aef53308c9d (MD5)Made available in DSpace on 2013-11-19T20:33:34Z (GMT). No. of bitstreams: 1 05285987.pdf: 607389 bytes, checksum: 7bf95c4d4e7807b789f64aef53308c9d (MD5) Previous issue date: 2009http://dx.doi.org/10.1049/iet-cds.2008.0287reponame:Repositório Institucional da UFBAinstname:Universidade Federal da Bahia (UFBA)instacron:UFBACMOS multiplier based on the relationship between drain current and inversion chargeIET Circuits, Devices and Systemsinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article10000-01-01info:eu-repo/semantics/openAccessengORIGINAL05285987.pdf05285987.pdfapplication/pdf607389https://repositorio.ufba.br/bitstream/ri/13786/1/05285987.pdf7bf95c4d4e7807b789f64aef53308c9dMD51LICENSElicense.txtlicense.txttext/plain1365https://repositorio.ufba.br/bitstream/ri/13786/2/license.txt5371a150bdc863f78dcf39281543bd86MD52TEXT05285987.pdf.txt05285987.pdf.txtExtracted texttext/plain30557https://repositorio.ufba.br/bitstream/ri/13786/3/05285987.pdf.txt96d90c116e24583bf2252adfb184e874MD53ri/137862022-07-05 14:02:48.989oai:repositorio.ufba.br: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Repositório InstitucionalPUBhttp://192.188.11.11:8080/oai/requestopendoar:19322022-07-05T17:02:48Repositório Institucional da UFBA - Universidade Federal da Bahia (UFBA)false
dc.title.pt_BR.fl_str_mv CMOS multiplier based on the relationship between drain current and inversion charge
dc.title.alternative.pt_BR.fl_str_mv IET Circuits, Devices and Systems
title CMOS multiplier based on the relationship between drain current and inversion charge
spellingShingle CMOS multiplier based on the relationship between drain current and inversion charge
Machado, M. B.
title_short CMOS multiplier based on the relationship between drain current and inversion charge
title_full CMOS multiplier based on the relationship between drain current and inversion charge
title_fullStr CMOS multiplier based on the relationship between drain current and inversion charge
title_full_unstemmed CMOS multiplier based on the relationship between drain current and inversion charge
title_sort CMOS multiplier based on the relationship between drain current and inversion charge
author Machado, M. B.
author_facet Machado, M. B.
Cunha, A. I. A.
Lacerda, L. A. de
Galup Montoro, C.
Schneider, Marcio Cherem
author_role author
author2 Cunha, A. I. A.
Lacerda, L. A. de
Galup Montoro, C.
Schneider, Marcio Cherem
author2_role author
author
author
author
dc.contributor.author.fl_str_mv Machado, M. B.
Cunha, A. I. A.
Lacerda, L. A. de
Galup Montoro, C.
Schneider, Marcio Cherem
Machado, M. B.
Cunha, A. I. A.
Lacerda, L. A. de
Galup Montoro, C.
Schneider, Marcio Cherem
description Texto completo: acesso restrito. p. 239-247
publishDate 2009
dc.date.issued.fl_str_mv 2009
dc.date.accessioned.fl_str_mv 2013-11-19T20:33:34Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://repositorio.ufba.br/ri/handle/ri/13786
dc.identifier.issn.none.fl_str_mv 1751-858X
dc.identifier.number.pt_BR.fl_str_mv v. 3, n. 5
identifier_str_mv 1751-858X
v. 3, n. 5
url http://repositorio.ufba.br/ri/handle/ri/13786
dc.language.iso.fl_str_mv eng
language eng
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.pt_BR.fl_str_mv http://dx.doi.org/10.1049/iet-cds.2008.0287
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFBA
instname:Universidade Federal da Bahia (UFBA)
instacron:UFBA
instname_str Universidade Federal da Bahia (UFBA)
instacron_str UFBA
institution UFBA
reponame_str Repositório Institucional da UFBA
collection Repositório Institucional da UFBA
bitstream.url.fl_str_mv https://repositorio.ufba.br/bitstream/ri/13786/1/05285987.pdf
https://repositorio.ufba.br/bitstream/ri/13786/2/license.txt
https://repositorio.ufba.br/bitstream/ri/13786/3/05285987.pdf.txt
bitstream.checksum.fl_str_mv 7bf95c4d4e7807b789f64aef53308c9d
5371a150bdc863f78dcf39281543bd86
96d90c116e24583bf2252adfb184e874
bitstream.checksumAlgorithm.fl_str_mv MD5
MD5
MD5
repository.name.fl_str_mv Repositório Institucional da UFBA - Universidade Federal da Bahia (UFBA)
repository.mail.fl_str_mv
_version_ 1808459460182540288

Registros relacionados