Sponge-like and columnar porous silicon implanted with nitrogen by plasma immersion ion implantation (PIII)

Detalhes bibliográficos
Autor(a) principal: Beloto, Antonio Fernando
Data de Publicação: 2002
Outros Autores: Ueda, Mario, Abramof, Eduardo, Senna, Jose Roberto Sbragia, Silva, Marcos Dias da, Kuranaga, Carlos, Reuther, H., Silva, Antonio Ferreira da, Pepe, Iuri Muniz
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFBA
Texto Completo: http://www.repositorio.ufba.br/ri/handle/ri/7519
Resumo: Texto completo: acesso restrito. p. 267–271
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spelling Beloto, Antonio FernandoUeda, MarioAbramof, EduardoSenna, Jose Roberto SbragiaSilva, Marcos Dias daKuranaga, CarlosReuther, H.Silva, Antonio Ferreira daPepe, Iuri MunizBeloto, Antonio FernandoUeda, MarioAbramof, EduardoSenna, Jose Roberto SbragiaSilva, Marcos Dias daKuranaga, CarlosReuther, H.Silva, Antonio Ferreira daPepe, Iuri Muniz2012-12-14T11:02:46Z20020257-8972http://www.repositorio.ufba.br/ri/handle/ri/7519v. 156, n. 1-3Texto completo: acesso restrito. p. 267–271Sponge-like and columnar porous silicon (PS) were prepared from p- and n-type (100) monocrystalline silicon wafers using different anodization conditions (hydrofluoric acid concentration, current density and anodization time) and then implanted with nitrogen by plasma immersion ion implantation (PIII). The effect of the implantation and of the compounds formed was analyzed by measuring the reflectance of the implanted samples for wavelengths between 220 and 800 nm. A reduction in reflectance in the ultraviolet (UV) region of the spectrum was observed for polished Si samples and for all kinds of PS samples. Increased UV-induced photoluminescence in these samples caused by the increase in absorption in the UV region is expected.Submitted by Suelen Reis (suelen_suzane@hotmail.com) on 2012-12-14T11:02:46Z No. of bitstreams: 1 1-s2.0-S0257897202001068-main.pdf: 420207 bytes, checksum: 42e4df0832dc18a47817b83164d7aa74 (MD5)Made available in DSpace on 2012-12-14T11:02:46Z (GMT). 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dc.title.pt_BR.fl_str_mv Sponge-like and columnar porous silicon implanted with nitrogen by plasma immersion ion implantation (PIII)
dc.title.alternative.pt_BR.fl_str_mv Surface and Coatings Technology
title Sponge-like and columnar porous silicon implanted with nitrogen by plasma immersion ion implantation (PIII)
spellingShingle Sponge-like and columnar porous silicon implanted with nitrogen by plasma immersion ion implantation (PIII)
Beloto, Antonio Fernando
Porous silicon
Plasma immersion ion implantation (PIII)
Reflectance
title_short Sponge-like and columnar porous silicon implanted with nitrogen by plasma immersion ion implantation (PIII)
title_full Sponge-like and columnar porous silicon implanted with nitrogen by plasma immersion ion implantation (PIII)
title_fullStr Sponge-like and columnar porous silicon implanted with nitrogen by plasma immersion ion implantation (PIII)
title_full_unstemmed Sponge-like and columnar porous silicon implanted with nitrogen by plasma immersion ion implantation (PIII)
title_sort Sponge-like and columnar porous silicon implanted with nitrogen by plasma immersion ion implantation (PIII)
author Beloto, Antonio Fernando
author_facet Beloto, Antonio Fernando
Ueda, Mario
Abramof, Eduardo
Senna, Jose Roberto Sbragia
Silva, Marcos Dias da
Kuranaga, Carlos
Reuther, H.
Silva, Antonio Ferreira da
Pepe, Iuri Muniz
author_role author
author2 Ueda, Mario
Abramof, Eduardo
Senna, Jose Roberto Sbragia
Silva, Marcos Dias da
Kuranaga, Carlos
Reuther, H.
Silva, Antonio Ferreira da
Pepe, Iuri Muniz
author2_role author
author
author
author
author
author
author
author
dc.contributor.author.fl_str_mv Beloto, Antonio Fernando
Ueda, Mario
Abramof, Eduardo
Senna, Jose Roberto Sbragia
Silva, Marcos Dias da
Kuranaga, Carlos
Reuther, H.
Silva, Antonio Ferreira da
Pepe, Iuri Muniz
Beloto, Antonio Fernando
Ueda, Mario
Abramof, Eduardo
Senna, Jose Roberto Sbragia
Silva, Marcos Dias da
Kuranaga, Carlos
Reuther, H.
Silva, Antonio Ferreira da
Pepe, Iuri Muniz
dc.subject.por.fl_str_mv Porous silicon
Plasma immersion ion implantation (PIII)
Reflectance
topic Porous silicon
Plasma immersion ion implantation (PIII)
Reflectance
description Texto completo: acesso restrito. p. 267–271
publishDate 2002
dc.date.issued.fl_str_mv 2002
dc.date.accessioned.fl_str_mv 2012-12-14T11:02:46Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://www.repositorio.ufba.br/ri/handle/ri/7519
dc.identifier.issn.none.fl_str_mv 0257-8972
dc.identifier.number.pt_BR.fl_str_mv v. 156, n. 1-3
identifier_str_mv 0257-8972
v. 156, n. 1-3
url http://www.repositorio.ufba.br/ri/handle/ri/7519
dc.language.iso.fl_str_mv eng
language eng
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.pt_BR.fl_str_mv http://dx.doi.org/10.1016/S0257-8972(02)00106-8
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reponame_str Repositório Institucional da UFBA
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