Efeitos de campo magnético nas propriedades de transmissão de hetero-estruturas GaAs/AlxGa1-xAs

• Autor(a) principal: Feijão, Márcio Luis Ximenes
• Data de Publicação: 1997
• Tipo de documento: Dissertação
• Idioma: por
• Título da fonte: Repositório Institucional da Universidade Federal do Ceará (UFC)
• Texto Completo: http://www.repositorio.ufc.br/handle/riufc/63879
• topic: Elétrons; Schrodinger, Equação de

ln this work we investigate the effects of an applied transverse magnetic field in the growth direction of the GaAs/AlxGa1-xAs heterostructures (in particular hete­rojunctions, single and double barriers) in the transmission properties of electrons, considering both abrupt and non-abrupt interfaces. The interfaces were described by a model in which the potential and carriers effective mass 'depends on the interfacial variation of the aluminum molar fraction. The carriers effective mass have spatial de­pendence in the interfaces, therefore the transmission properties in heterojunctions, single barriers, and double barriers of GaAs/AlxGa1-xAs are numerically calculatecl. We used the multsteps method, and the Schroedinger equations that merge from the position dependent energy kinetic operator p ̂[m(z) -1p ̂}/2. We verified that the magnetic field shifts the transmissions curves to high energy regions for heterostruc­tures GaAs/AlxGa1-xAs in the abrupt and nonabrupt interface abrupt. ln addition, the well known nonabrupt interface effects are altered by magnetic field when we study heterojunctions and single barriers of GaAs/AlxGa1-xAs. Considering double barriers of GaAs/AlxGa1-xAs, in the presence of a magnetic field, the assimetry of barriers is responsible for shifts in the resonances of the transmission coefficient.