Electrochemical atomic layer epitaxy deposition of ultrathin SnTe films.
Autor(a) principal: | |
---|---|
Data de Publicação: | 2019 |
Outros Autores: | , , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFOP |
Texto Completo: | http://www.repositorio.ufop.br/handle/123456789/12589 https://doi.org/10.21926/rpm.1904005 |
Resumo: | Tin telluride (SnTe) ultrathin films were deposited electrochemically on polycrystalline and monocrystalline gold substrates using the electrochemical atomic layer epitaxy (ECALE) method. The electrochemical behaviors of Sn and Te were studied systematically by means of cyclic voltammetry. Cyclic voltammetry curves for Sn displayed a broad peak in the region between -0.15 V and -0.35 V, which was related to the under-potential deposition (UPD), while the curves for Te displayed a peak at 0.3 V for Te UPD. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Raman spectroscopy, and scanning electron microscopy (SEM) were employed for the characterization of the ultrathin SnTe films. XRD and Raman spectroscopy confirmed the deposition of a single SnTe phase, while SEM revealed that the deposits were composed of nanocrystallites. |
id |
UFOP_7e6ede66d08f9cfa4ab8992f8f8553fd |
---|---|
oai_identifier_str |
oai:localhost:123456789/12589 |
network_acronym_str |
UFOP |
network_name_str |
Repositório Institucional da UFOP |
repository_id_str |
3233 |
spelling |
Manhabosco, Taíse MatteAloni, ShaulKuykendall, Tevye R.Manhabosco, Sara MatteBatista, Ana BárbaraSoares, Jaqueline dos SantosBarboza, Ana Paula MoreiraOliveira, Alan Barros deBatista, Ronaldo Junio CamposUrban, Jeffrey J.2020-08-13T16:55:19Z2020-08-13T16:55:19Z2019MANHABOSCO, T. M. et al. Electrochemical atomic layer epitaxy deposition of ultrathin SnTe films. Recent Progress in Materials, v. 1, n. 4, out. 2019. Disponível em: <https://www.lidsen.com/journals/rpm/rpm-01-04-005>. Acesso em: 03 jul. 2020.2689-5846http://www.repositorio.ufop.br/handle/123456789/12589https://doi.org/10.21926/rpm.1904005Tin telluride (SnTe) ultrathin films were deposited electrochemically on polycrystalline and monocrystalline gold substrates using the electrochemical atomic layer epitaxy (ECALE) method. The electrochemical behaviors of Sn and Te were studied systematically by means of cyclic voltammetry. Cyclic voltammetry curves for Sn displayed a broad peak in the region between -0.15 V and -0.35 V, which was related to the under-potential deposition (UPD), while the curves for Te displayed a peak at 0.3 V for Te UPD. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Raman spectroscopy, and scanning electron microscopy (SEM) were employed for the characterization of the ultrathin SnTe films. XRD and Raman spectroscopy confirmed the deposition of a single SnTe phase, while SEM revealed that the deposits were composed of nanocrystallites.This is an open access article distributed under the conditions of the Creative Commons by Attribution License, which permits unrestricted use, distribution, and reproduction in any medium or format, provided the original work is correctly cited. Fonte: o próprio artigo.info:eu-repo/semantics/openAccessUnder-potential depositionElectrochemical atomic layer epitaxy deposition of ultrathin SnTe films.info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleengreponame:Repositório Institucional da UFOPinstname:Universidade Federal de Ouro Preto (UFOP)instacron:UFOPLICENSElicense.txtlicense.txttext/plain; charset=utf-8924http://www.repositorio.ufop.br/bitstream/123456789/12589/2/license.txt62604f8d955274beb56c80ce1ee5dcaeMD52ORIGINALARTIGO_ElectrochemicalAtomicLayer.pdfARTIGO_ElectrochemicalAtomicLayer.pdfapplication/pdf1145602http://www.repositorio.ufop.br/bitstream/123456789/12589/1/ARTIGO_ElectrochemicalAtomicLayer.pdfb85e6d48ae268c0f9e1fceb0a581dfa0MD51123456789/125892020-08-13 12:55:19.46oai:localhost: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ório InstitucionalPUBhttp://www.repositorio.ufop.br/oai/requestrepositorio@ufop.edu.bropendoar:32332020-08-13T16:55:19Repositório Institucional da UFOP - Universidade Federal de Ouro Preto (UFOP)false |
dc.title.pt_BR.fl_str_mv |
Electrochemical atomic layer epitaxy deposition of ultrathin SnTe films. |
title |
Electrochemical atomic layer epitaxy deposition of ultrathin SnTe films. |
spellingShingle |
Electrochemical atomic layer epitaxy deposition of ultrathin SnTe films. Manhabosco, Taíse Matte Under-potential deposition |
title_short |
Electrochemical atomic layer epitaxy deposition of ultrathin SnTe films. |
title_full |
Electrochemical atomic layer epitaxy deposition of ultrathin SnTe films. |
title_fullStr |
Electrochemical atomic layer epitaxy deposition of ultrathin SnTe films. |
title_full_unstemmed |
Electrochemical atomic layer epitaxy deposition of ultrathin SnTe films. |
title_sort |
Electrochemical atomic layer epitaxy deposition of ultrathin SnTe films. |
author |
Manhabosco, Taíse Matte |
author_facet |
Manhabosco, Taíse Matte Aloni, Shaul Kuykendall, Tevye R. Manhabosco, Sara Matte Batista, Ana Bárbara Soares, Jaqueline dos Santos Barboza, Ana Paula Moreira Oliveira, Alan Barros de Batista, Ronaldo Junio Campos Urban, Jeffrey J. |
author_role |
author |
author2 |
Aloni, Shaul Kuykendall, Tevye R. Manhabosco, Sara Matte Batista, Ana Bárbara Soares, Jaqueline dos Santos Barboza, Ana Paula Moreira Oliveira, Alan Barros de Batista, Ronaldo Junio Campos Urban, Jeffrey J. |
author2_role |
author author author author author author author author author |
dc.contributor.author.fl_str_mv |
Manhabosco, Taíse Matte Aloni, Shaul Kuykendall, Tevye R. Manhabosco, Sara Matte Batista, Ana Bárbara Soares, Jaqueline dos Santos Barboza, Ana Paula Moreira Oliveira, Alan Barros de Batista, Ronaldo Junio Campos Urban, Jeffrey J. |
dc.subject.por.fl_str_mv |
Under-potential deposition |
topic |
Under-potential deposition |
description |
Tin telluride (SnTe) ultrathin films were deposited electrochemically on polycrystalline and monocrystalline gold substrates using the electrochemical atomic layer epitaxy (ECALE) method. The electrochemical behaviors of Sn and Te were studied systematically by means of cyclic voltammetry. Cyclic voltammetry curves for Sn displayed a broad peak in the region between -0.15 V and -0.35 V, which was related to the under-potential deposition (UPD), while the curves for Te displayed a peak at 0.3 V for Te UPD. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Raman spectroscopy, and scanning electron microscopy (SEM) were employed for the characterization of the ultrathin SnTe films. XRD and Raman spectroscopy confirmed the deposition of a single SnTe phase, while SEM revealed that the deposits were composed of nanocrystallites. |
publishDate |
2019 |
dc.date.issued.fl_str_mv |
2019 |
dc.date.accessioned.fl_str_mv |
2020-08-13T16:55:19Z |
dc.date.available.fl_str_mv |
2020-08-13T16:55:19Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.citation.fl_str_mv |
MANHABOSCO, T. M. et al. Electrochemical atomic layer epitaxy deposition of ultrathin SnTe films. Recent Progress in Materials, v. 1, n. 4, out. 2019. Disponível em: <https://www.lidsen.com/journals/rpm/rpm-01-04-005>. Acesso em: 03 jul. 2020. |
dc.identifier.uri.fl_str_mv |
http://www.repositorio.ufop.br/handle/123456789/12589 |
dc.identifier.issn.none.fl_str_mv |
2689-5846 |
dc.identifier.doi.pt_BR.fl_str_mv |
https://doi.org/10.21926/rpm.1904005 |
identifier_str_mv |
MANHABOSCO, T. M. et al. Electrochemical atomic layer epitaxy deposition of ultrathin SnTe films. Recent Progress in Materials, v. 1, n. 4, out. 2019. Disponível em: <https://www.lidsen.com/journals/rpm/rpm-01-04-005>. Acesso em: 03 jul. 2020. 2689-5846 |
url |
http://www.repositorio.ufop.br/handle/123456789/12589 https://doi.org/10.21926/rpm.1904005 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
reponame:Repositório Institucional da UFOP instname:Universidade Federal de Ouro Preto (UFOP) instacron:UFOP |
instname_str |
Universidade Federal de Ouro Preto (UFOP) |
instacron_str |
UFOP |
institution |
UFOP |
reponame_str |
Repositório Institucional da UFOP |
collection |
Repositório Institucional da UFOP |
bitstream.url.fl_str_mv |
http://www.repositorio.ufop.br/bitstream/123456789/12589/2/license.txt http://www.repositorio.ufop.br/bitstream/123456789/12589/1/ARTIGO_ElectrochemicalAtomicLayer.pdf |
bitstream.checksum.fl_str_mv |
62604f8d955274beb56c80ce1ee5dcae b85e6d48ae268c0f9e1fceb0a581dfa0 |
bitstream.checksumAlgorithm.fl_str_mv |
MD5 MD5 |
repository.name.fl_str_mv |
Repositório Institucional da UFOP - Universidade Federal de Ouro Preto (UFOP) |
repository.mail.fl_str_mv |
repositorio@ufop.edu.br |
_version_ |
1801685736924119040 |