Raman evidence for pressure-induced formation of diamondene.

• Autor(a) principal: Martins, Luiz Gustavo Pimenta
• Data de Publicação: 2017
• Outros Autores: Matos, Matheus Josué de Souza, Paschoal, Alexandre R., Freire, Paulo T. C., Andrade, Nádia Ferreira de, Aguiar, Acrisio Lins de, Kong, Jing, Neves, Bernardo Ruegger Almeida, Oliveira, Alan Barros de, Mazzoni, Mario Sergio de Carvalho, Souza Filho, Antonio Gomes, Cançado, Luiz Gustavo de Oliveira Lopes
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFOP
• Texto Completo: http://www.repositorio.ufop.br/handle/123456789/9404; https://doi.org/10.1038/s41467-017-00149-8

Despite the advanced stage of diamond thin-film technology, with applications ranging from superconductivity to biosensing, the realization of a stable and atomically thick two-dimensional diamond material, named here as diamondene, is still forthcoming. Adding to the outstanding properties of its bulk and thin-film counterparts, diamondene is predicted to be a ferromagnetic semiconductor with spin polarized bands. Here, we provide spectroscopic evidence for the formation of diamondene by performing Raman spectroscopy of double-layer graphene under high pressure. The results are explained in terms of a breakdown in the Kohn anomaly associated with the finite size of the remaining graphene sites surrounded by the diamondene matrix. Ab initio calculations and molecular dynamics simulations are employed to clarify the mechanism of diamondene formation, which requires two or more layers of graphene subjected to high pressures in the presence of specific chemical groups such as hydroxyl groups or hydrogens.