Raman evidence for pressure-induced formation of diamondene.
Autor(a) principal: | |
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Data de Publicação: | 2017 |
Outros Autores: | , , , , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFOP |
Texto Completo: | http://www.repositorio.ufop.br/handle/123456789/9404 https://doi.org/10.1038/s41467-017-00149-8 |
Resumo: | Despite the advanced stage of diamond thin-film technology, with applications ranging from superconductivity to biosensing, the realization of a stable and atomically thick two-dimensional diamond material, named here as diamondene, is still forthcoming. Adding to the outstanding properties of its bulk and thin-film counterparts, diamondene is predicted to be a ferromagnetic semiconductor with spin polarized bands. Here, we provide spectroscopic evidence for the formation of diamondene by performing Raman spectroscopy of double-layer graphene under high pressure. The results are explained in terms of a breakdown in the Kohn anomaly associated with the finite size of the remaining graphene sites surrounded by the diamondene matrix. Ab initio calculations and molecular dynamics simulations are employed to clarify the mechanism of diamondene formation, which requires two or more layers of graphene subjected to high pressures in the presence of specific chemical groups such as hydroxyl groups or hydrogens. |
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Martins, Luiz Gustavo PimentaMatos, Matheus Josué de SouzaPaschoal, Alexandre R.Freire, Paulo T. C.Andrade, Nádia Ferreira deAguiar, Acrisio Lins deKong, JingNeves, Bernardo Ruegger AlmeidaOliveira, Alan Barros deMazzoni, Mario Sergio de CarvalhoSouza Filho, Antonio GomesCançado, Luiz Gustavo de Oliveira Lopes2018-02-01T13:51:52Z2018-02-01T13:51:52Z2017MARTINS, L. G. P. et al. Raman evidence for pressure-induced formation of diamondene. Nature Communications, v. 8, p. 96-105, 2017. Disponível em: <https://www.nature.com/articles/s41467-017-00149-8#additional-information>. Acesso em: 16 jan. 2018.2041-1723 http://www.repositorio.ufop.br/handle/123456789/9404https://doi.org/10.1038/s41467-017-00149-8Despite the advanced stage of diamond thin-film technology, with applications ranging from superconductivity to biosensing, the realization of a stable and atomically thick two-dimensional diamond material, named here as diamondene, is still forthcoming. Adding to the outstanding properties of its bulk and thin-film counterparts, diamondene is predicted to be a ferromagnetic semiconductor with spin polarized bands. Here, we provide spectroscopic evidence for the formation of diamondene by performing Raman spectroscopy of double-layer graphene under high pressure. The results are explained in terms of a breakdown in the Kohn anomaly associated with the finite size of the remaining graphene sites surrounded by the diamondene matrix. Ab initio calculations and molecular dynamics simulations are employed to clarify the mechanism of diamondene formation, which requires two or more layers of graphene subjected to high pressures in the presence of specific chemical groups such as hydroxyl groups or hydrogens.This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. Fonte: o próprio artigo.info:eu-repo/semantics/openAccessRaman evidence for pressure-induced formation of diamondene.info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleengreponame:Repositório Institucional da UFOPinstname:Universidade Federal de Ouro Preto (UFOP)instacron:UFOPLICENSElicense.txtlicense.txttext/plain; charset=utf-8924http://www.repositorio.ufop.br/bitstream/123456789/9404/2/license.txt62604f8d955274beb56c80ce1ee5dcaeMD52ORIGINALARTIGO_RamanEvidencePressure.pdfARTIGO_RamanEvidencePressure.pdfapplication/pdf1161380http://www.repositorio.ufop.br/bitstream/123456789/9404/1/ARTIGO_RamanEvidencePressure.pdfd09427bee09db8d8e618939a63293e41MD51123456789/94042020-02-27 09:17:52.399oai:localhost: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ório InstitucionalPUBhttp://www.repositorio.ufop.br/oai/requestrepositorio@ufop.edu.bropendoar:32332020-02-27T14:17:52Repositório Institucional da UFOP - Universidade Federal de Ouro Preto (UFOP)false |
dc.title.pt_BR.fl_str_mv |
Raman evidence for pressure-induced formation of diamondene. |
title |
Raman evidence for pressure-induced formation of diamondene. |
spellingShingle |
Raman evidence for pressure-induced formation of diamondene. Martins, Luiz Gustavo Pimenta |
title_short |
Raman evidence for pressure-induced formation of diamondene. |
title_full |
Raman evidence for pressure-induced formation of diamondene. |
title_fullStr |
Raman evidence for pressure-induced formation of diamondene. |
title_full_unstemmed |
Raman evidence for pressure-induced formation of diamondene. |
title_sort |
Raman evidence for pressure-induced formation of diamondene. |
author |
Martins, Luiz Gustavo Pimenta |
author_facet |
Martins, Luiz Gustavo Pimenta Matos, Matheus Josué de Souza Paschoal, Alexandre R. Freire, Paulo T. C. Andrade, Nádia Ferreira de Aguiar, Acrisio Lins de Kong, Jing Neves, Bernardo Ruegger Almeida Oliveira, Alan Barros de Mazzoni, Mario Sergio de Carvalho Souza Filho, Antonio Gomes Cançado, Luiz Gustavo de Oliveira Lopes |
author_role |
author |
author2 |
Matos, Matheus Josué de Souza Paschoal, Alexandre R. Freire, Paulo T. C. Andrade, Nádia Ferreira de Aguiar, Acrisio Lins de Kong, Jing Neves, Bernardo Ruegger Almeida Oliveira, Alan Barros de Mazzoni, Mario Sergio de Carvalho Souza Filho, Antonio Gomes Cançado, Luiz Gustavo de Oliveira Lopes |
author2_role |
author author author author author author author author author author author |
dc.contributor.author.fl_str_mv |
Martins, Luiz Gustavo Pimenta Matos, Matheus Josué de Souza Paschoal, Alexandre R. Freire, Paulo T. C. Andrade, Nádia Ferreira de Aguiar, Acrisio Lins de Kong, Jing Neves, Bernardo Ruegger Almeida Oliveira, Alan Barros de Mazzoni, Mario Sergio de Carvalho Souza Filho, Antonio Gomes Cançado, Luiz Gustavo de Oliveira Lopes |
description |
Despite the advanced stage of diamond thin-film technology, with applications ranging from superconductivity to biosensing, the realization of a stable and atomically thick two-dimensional diamond material, named here as diamondene, is still forthcoming. Adding to the outstanding properties of its bulk and thin-film counterparts, diamondene is predicted to be a ferromagnetic semiconductor with spin polarized bands. Here, we provide spectroscopic evidence for the formation of diamondene by performing Raman spectroscopy of double-layer graphene under high pressure. The results are explained in terms of a breakdown in the Kohn anomaly associated with the finite size of the remaining graphene sites surrounded by the diamondene matrix. Ab initio calculations and molecular dynamics simulations are employed to clarify the mechanism of diamondene formation, which requires two or more layers of graphene subjected to high pressures in the presence of specific chemical groups such as hydroxyl groups or hydrogens. |
publishDate |
2017 |
dc.date.issued.fl_str_mv |
2017 |
dc.date.accessioned.fl_str_mv |
2018-02-01T13:51:52Z |
dc.date.available.fl_str_mv |
2018-02-01T13:51:52Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.citation.fl_str_mv |
MARTINS, L. G. P. et al. Raman evidence for pressure-induced formation of diamondene. Nature Communications, v. 8, p. 96-105, 2017. Disponível em: <https://www.nature.com/articles/s41467-017-00149-8#additional-information>. Acesso em: 16 jan. 2018. |
dc.identifier.uri.fl_str_mv |
http://www.repositorio.ufop.br/handle/123456789/9404 |
dc.identifier.issn.none.fl_str_mv |
2041-1723 |
dc.identifier.doi.none.fl_str_mv |
https://doi.org/10.1038/s41467-017-00149-8 |
identifier_str_mv |
MARTINS, L. G. P. et al. Raman evidence for pressure-induced formation of diamondene. Nature Communications, v. 8, p. 96-105, 2017. Disponível em: <https://www.nature.com/articles/s41467-017-00149-8#additional-information>. Acesso em: 16 jan. 2018. 2041-1723 |
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http://www.repositorio.ufop.br/handle/123456789/9404 https://doi.org/10.1038/s41467-017-00149-8 |
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eng |
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