Fabrication and electrical performance of high-density arrays of nanometric silicon tips.

Detalhes bibliográficos
Autor(a) principal: Carvalho, Edson José de
Data de Publicação: 2010
Outros Autores: Alves, Marco Antônio Robert, Braga, Edmundo da Silva, Cescato, Lucila Helena Deliesposte
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFOP
Texto Completo: http://www.repositorio.ufop.br/handle/123456789/1827
Resumo: We propose and demonstrate a simple and low cost process for the fabrication of large area arrays of nanometric silicon tips, for use as Field Emission Devices (FEDs). The process combines Interference Lithography (IL) with isotropic Reactive Ion Etching (RIE). Si tips with typical curvature radius of 20 nm and height of 900 nm were recorded with a periodicity of 1 lm (density of 106 tips/mm2 ) covering a Silicon wafer of 2 in. The measurement of the electrical performance of the arrays demonstrates the fea-sibility of the association of these two techniques for recording Field Emission Tips.
id UFOP_c7d6cf55afae27d74a32f730d42622ec
oai_identifier_str oai:localhost:123456789/1827
network_acronym_str UFOP
network_name_str Repositório Institucional da UFOP
repository_id_str 3233
spelling Carvalho, Edson José deAlves, Marco Antônio RobertBraga, Edmundo da SilvaCescato, Lucila Helena Deliesposte2012-11-26T16:20:20Z2012-11-26T16:20:20Z2010CARVALHO, E. J. et al. Fabrication and electrical performance of high-density arrays of nanometric silicon tips. Microelectronic Engineering. v. 87, p. 2544–2548, 2010. Disponível em: <https://www.sciencedirect.com/science/article/pii/S0167931710002327>. Acesso em: 26 nov. 2012.01679317http://www.repositorio.ufop.br/handle/123456789/1827We propose and demonstrate a simple and low cost process for the fabrication of large area arrays of nanometric silicon tips, for use as Field Emission Devices (FEDs). The process combines Interference Lithography (IL) with isotropic Reactive Ion Etching (RIE). Si tips with typical curvature radius of 20 nm and height of 900 nm were recorded with a periodicity of 1 lm (density of 106 tips/mm2 ) covering a Silicon wafer of 2 in. The measurement of the electrical performance of the arrays demonstrates the fea-sibility of the association of these two techniques for recording Field Emission Tips.Interference lithographyReactive ion etchingSilicon tipsField emission devicesFabrication and electrical performance of high-density arrays of nanometric silicon tips.info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleO periódico Microelectronic Engineering concede permissão para depósito do artigo no Repositório Institucional da UFOP. Número da licença: 3306990421263.info:eu-repo/semantics/openAccessengreponame:Repositório Institucional da UFOPinstname:Universidade Federal de Ouro Preto (UFOP)instacron:UFOPLICENSElicense.txtlicense.txttext/plain; charset=utf-81748http://www.repositorio.ufop.br/bitstream/123456789/1827/2/license.txt8a4605be74aa9ea9d79846c1fba20a33MD52ORIGINALARTIGO_FabricationElectricalPerformance.pdfARTIGO_FabricationElectricalPerformance.pdfapplication/pdf910208http://www.repositorio.ufop.br/bitstream/123456789/1827/1/ARTIGO_FabricationElectricalPerformance.pdfed8d091ad6a02f2aeb4a91ec72a40801MD51123456789/18272019-03-13 13:29:33.853oai:localhost: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Repositório InstitucionalPUBhttp://www.repositorio.ufop.br/oai/requestrepositorio@ufop.edu.bropendoar:32332019-03-13T17:29:33Repositório Institucional da UFOP - Universidade Federal de Ouro Preto (UFOP)false
dc.title.pt_BR.fl_str_mv Fabrication and electrical performance of high-density arrays of nanometric silicon tips.
title Fabrication and electrical performance of high-density arrays of nanometric silicon tips.
spellingShingle Fabrication and electrical performance of high-density arrays of nanometric silicon tips.
Carvalho, Edson José de
Interference lithography
Reactive ion etching
Silicon tips
Field emission devices
title_short Fabrication and electrical performance of high-density arrays of nanometric silicon tips.
title_full Fabrication and electrical performance of high-density arrays of nanometric silicon tips.
title_fullStr Fabrication and electrical performance of high-density arrays of nanometric silicon tips.
title_full_unstemmed Fabrication and electrical performance of high-density arrays of nanometric silicon tips.
title_sort Fabrication and electrical performance of high-density arrays of nanometric silicon tips.
author Carvalho, Edson José de
author_facet Carvalho, Edson José de
Alves, Marco Antônio Robert
Braga, Edmundo da Silva
Cescato, Lucila Helena Deliesposte
author_role author
author2 Alves, Marco Antônio Robert
Braga, Edmundo da Silva
Cescato, Lucila Helena Deliesposte
author2_role author
author
author
dc.contributor.author.fl_str_mv Carvalho, Edson José de
Alves, Marco Antônio Robert
Braga, Edmundo da Silva
Cescato, Lucila Helena Deliesposte
dc.subject.por.fl_str_mv Interference lithography
Reactive ion etching
Silicon tips
Field emission devices
topic Interference lithography
Reactive ion etching
Silicon tips
Field emission devices
description We propose and demonstrate a simple and low cost process for the fabrication of large area arrays of nanometric silicon tips, for use as Field Emission Devices (FEDs). The process combines Interference Lithography (IL) with isotropic Reactive Ion Etching (RIE). Si tips with typical curvature radius of 20 nm and height of 900 nm were recorded with a periodicity of 1 lm (density of 106 tips/mm2 ) covering a Silicon wafer of 2 in. The measurement of the electrical performance of the arrays demonstrates the fea-sibility of the association of these two techniques for recording Field Emission Tips.
publishDate 2010
dc.date.issued.fl_str_mv 2010
dc.date.accessioned.fl_str_mv 2012-11-26T16:20:20Z
dc.date.available.fl_str_mv 2012-11-26T16:20:20Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.citation.fl_str_mv CARVALHO, E. J. et al. Fabrication and electrical performance of high-density arrays of nanometric silicon tips. Microelectronic Engineering. v. 87, p. 2544–2548, 2010. Disponível em: <https://www.sciencedirect.com/science/article/pii/S0167931710002327>. Acesso em: 26 nov. 2012.
dc.identifier.uri.fl_str_mv http://www.repositorio.ufop.br/handle/123456789/1827
dc.identifier.issn.none.fl_str_mv 01679317
identifier_str_mv CARVALHO, E. J. et al. Fabrication and electrical performance of high-density arrays of nanometric silicon tips. Microelectronic Engineering. v. 87, p. 2544–2548, 2010. Disponível em: <https://www.sciencedirect.com/science/article/pii/S0167931710002327>. Acesso em: 26 nov. 2012.
01679317
url http://www.repositorio.ufop.br/handle/123456789/1827
dc.language.iso.fl_str_mv eng
language eng
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFOP
instname:Universidade Federal de Ouro Preto (UFOP)
instacron:UFOP
instname_str Universidade Federal de Ouro Preto (UFOP)
instacron_str UFOP
institution UFOP
reponame_str Repositório Institucional da UFOP
collection Repositório Institucional da UFOP
bitstream.url.fl_str_mv http://www.repositorio.ufop.br/bitstream/123456789/1827/2/license.txt
http://www.repositorio.ufop.br/bitstream/123456789/1827/1/ARTIGO_FabricationElectricalPerformance.pdf
bitstream.checksum.fl_str_mv 8a4605be74aa9ea9d79846c1fba20a33
ed8d091ad6a02f2aeb4a91ec72a40801
bitstream.checksumAlgorithm.fl_str_mv MD5
MD5
repository.name.fl_str_mv Repositório Institucional da UFOP - Universidade Federal de Ouro Preto (UFOP)
repository.mail.fl_str_mv repositorio@ufop.edu.br
_version_ 1801685714790776832

Registros relacionados