Electrochemical atomic layer epitaxy deposition of ultrathin SnTe films.

Detalhes bibliográficos
Autor(a) principal: Manhabosco, Taíse Matte
Data de Publicação: 2019
Outros Autores: Aloni, Shaul, Kuykendall, Tevye R., Manhabosco, Sara Matte, Batista, Ana Bárbara, Soares, Jaqueline dos Santos, Barboza, Ana Paula Moreira, Oliveira, Alan Barros de, Batista, Ronaldo Junio Campos, Urban, Jeffrey J.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFOP
Texto Completo: http://www.repositorio.ufop.br/handle/123456789/12589
https://doi.org/10.21926/rpm.1904005
Resumo: Tin telluride (SnTe) ultrathin films were deposited electrochemically on polycrystalline and monocrystalline gold substrates using the electrochemical atomic layer epitaxy (ECALE) method. The electrochemical behaviors of Sn and Te were studied systematically by means of cyclic voltammetry. Cyclic voltammetry curves for Sn displayed a broad peak in the region between -0.15 V and -0.35 V, which was related to the under-potential deposition (UPD), while the curves for Te displayed a peak at 0.3 V for Te UPD. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Raman spectroscopy, and scanning electron microscopy (SEM) were employed for the characterization of the ultrathin SnTe films. XRD and Raman spectroscopy confirmed the deposition of a single SnTe phase, while SEM revealed that the deposits were composed of nanocrystallites.
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spelling Electrochemical atomic layer epitaxy deposition of ultrathin SnTe films.Under-potential depositionTin telluride (SnTe) ultrathin films were deposited electrochemically on polycrystalline and monocrystalline gold substrates using the electrochemical atomic layer epitaxy (ECALE) method. The electrochemical behaviors of Sn and Te were studied systematically by means of cyclic voltammetry. Cyclic voltammetry curves for Sn displayed a broad peak in the region between -0.15 V and -0.35 V, which was related to the under-potential deposition (UPD), while the curves for Te displayed a peak at 0.3 V for Te UPD. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Raman spectroscopy, and scanning electron microscopy (SEM) were employed for the characterization of the ultrathin SnTe films. XRD and Raman spectroscopy confirmed the deposition of a single SnTe phase, while SEM revealed that the deposits were composed of nanocrystallites.2020-08-13T16:55:19Z2020-08-13T16:55:19Z2019info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfMANHABOSCO, T. M. et al. Electrochemical atomic layer epitaxy deposition of ultrathin SnTe films. Recent Progress in Materials, v. 1, n. 4, out. 2019. Disponível em: <https://www.lidsen.com/journals/rpm/rpm-01-04-005>. Acesso em: 03 jul. 2020.2689-5846http://www.repositorio.ufop.br/handle/123456789/12589https://doi.org/10.21926/rpm.1904005This is an open access article distributed under the conditions of the Creative Commons by Attribution License, which permits unrestricted use, distribution, and reproduction in any medium or format, provided the original work is correctly cited. Fonte: o próprio artigo.info:eu-repo/semantics/openAccessManhabosco, Taíse MatteAloni, ShaulKuykendall, Tevye R.Manhabosco, Sara MatteBatista, Ana BárbaraSoares, Jaqueline dos SantosBarboza, Ana Paula MoreiraOliveira, Alan Barros deBatista, Ronaldo Junio CamposUrban, Jeffrey J.engreponame:Repositório Institucional da UFOPinstname:Universidade Federal de Ouro Preto (UFOP)instacron:UFOP2020-08-13T16:55:19Zoai:repositorio.ufop.br:123456789/12589Repositório InstitucionalPUBhttp://www.repositorio.ufop.br/oai/requestrepositorio@ufop.edu.bropendoar:32332020-08-13T16:55:19Repositório Institucional da UFOP - Universidade Federal de Ouro Preto (UFOP)false
dc.title.none.fl_str_mv Electrochemical atomic layer epitaxy deposition of ultrathin SnTe films.
title Electrochemical atomic layer epitaxy deposition of ultrathin SnTe films.
spellingShingle Electrochemical atomic layer epitaxy deposition of ultrathin SnTe films.
Manhabosco, Taíse Matte
Under-potential deposition
title_short Electrochemical atomic layer epitaxy deposition of ultrathin SnTe films.
title_full Electrochemical atomic layer epitaxy deposition of ultrathin SnTe films.
title_fullStr Electrochemical atomic layer epitaxy deposition of ultrathin SnTe films.
title_full_unstemmed Electrochemical atomic layer epitaxy deposition of ultrathin SnTe films.
title_sort Electrochemical atomic layer epitaxy deposition of ultrathin SnTe films.
author Manhabosco, Taíse Matte
author_facet Manhabosco, Taíse Matte
Aloni, Shaul
Kuykendall, Tevye R.
Manhabosco, Sara Matte
Batista, Ana Bárbara
Soares, Jaqueline dos Santos
Barboza, Ana Paula Moreira
Oliveira, Alan Barros de
Batista, Ronaldo Junio Campos
Urban, Jeffrey J.
author_role author
author2 Aloni, Shaul
Kuykendall, Tevye R.
Manhabosco, Sara Matte
Batista, Ana Bárbara
Soares, Jaqueline dos Santos
Barboza, Ana Paula Moreira
Oliveira, Alan Barros de
Batista, Ronaldo Junio Campos
Urban, Jeffrey J.
author2_role author
author
author
author
author
author
author
author
author
dc.contributor.author.fl_str_mv Manhabosco, Taíse Matte
Aloni, Shaul
Kuykendall, Tevye R.
Manhabosco, Sara Matte
Batista, Ana Bárbara
Soares, Jaqueline dos Santos
Barboza, Ana Paula Moreira
Oliveira, Alan Barros de
Batista, Ronaldo Junio Campos
Urban, Jeffrey J.
dc.subject.por.fl_str_mv Under-potential deposition
topic Under-potential deposition
description Tin telluride (SnTe) ultrathin films were deposited electrochemically on polycrystalline and monocrystalline gold substrates using the electrochemical atomic layer epitaxy (ECALE) method. The electrochemical behaviors of Sn and Te were studied systematically by means of cyclic voltammetry. Cyclic voltammetry curves for Sn displayed a broad peak in the region between -0.15 V and -0.35 V, which was related to the under-potential deposition (UPD), while the curves for Te displayed a peak at 0.3 V for Te UPD. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Raman spectroscopy, and scanning electron microscopy (SEM) were employed for the characterization of the ultrathin SnTe films. XRD and Raman spectroscopy confirmed the deposition of a single SnTe phase, while SEM revealed that the deposits were composed of nanocrystallites.
publishDate 2019
dc.date.none.fl_str_mv 2019
2020-08-13T16:55:19Z
2020-08-13T16:55:19Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv MANHABOSCO, T. M. et al. Electrochemical atomic layer epitaxy deposition of ultrathin SnTe films. Recent Progress in Materials, v. 1, n. 4, out. 2019. Disponível em: <https://www.lidsen.com/journals/rpm/rpm-01-04-005>. Acesso em: 03 jul. 2020.
2689-5846
http://www.repositorio.ufop.br/handle/123456789/12589
https://doi.org/10.21926/rpm.1904005
identifier_str_mv MANHABOSCO, T. M. et al. Electrochemical atomic layer epitaxy deposition of ultrathin SnTe films. Recent Progress in Materials, v. 1, n. 4, out. 2019. Disponível em: <https://www.lidsen.com/journals/rpm/rpm-01-04-005>. Acesso em: 03 jul. 2020.
2689-5846
url http://www.repositorio.ufop.br/handle/123456789/12589
https://doi.org/10.21926/rpm.1904005
dc.language.iso.fl_str_mv eng
language eng
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFOP
instname:Universidade Federal de Ouro Preto (UFOP)
instacron:UFOP
instname_str Universidade Federal de Ouro Preto (UFOP)
instacron_str UFOP
institution UFOP
reponame_str Repositório Institucional da UFOP
collection Repositório Institucional da UFOP
repository.name.fl_str_mv Repositório Institucional da UFOP - Universidade Federal de Ouro Preto (UFOP)
repository.mail.fl_str_mv repositorio@ufop.edu.br
_version_ 1813002821419663360

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