Nanoscale density fluctuations in swift heavy ion irradiated amorphous SiO2

Detalhes bibliográficos
Autor(a) principal: Kluth, Patrick
Data de Publicação: 2011
Outros Autores: Pakarinen, O. H., Djurabekova, F., Giulian, Raquel, Ridgway, M.C., Byrne, A. P., Nordlund, K.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/206613
Resumo: We report on the observation of nanoscale density fluctuations in 2 μm thick amorphous SiO2 layers irradiated with 185 MeV Au ions. At high fluences, in excess of approximately 5 1012 ions=cm², where the surface is completely covered by ion tracks, synchrotron small angle x-ray scattering measurements reveal the existence of a steady state of density fluctuations. In agreement with molecular dynamics simulations, this steady state is consistent with an ion track “annihilation” process, where high-density regions generated in the periphery of new tracks fill in low-density regions located at the center of existing tracks.
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spelling Kluth, PatrickPakarinen, O. H.Djurabekova, F.Giulian, RaquelRidgway, M.C.Byrne, A. P.Nordlund, K.2020-03-11T04:16:52Z20110021-8979http://hdl.handle.net/10183/206613000829563We report on the observation of nanoscale density fluctuations in 2 μm thick amorphous SiO2 layers irradiated with 185 MeV Au ions. At high fluences, in excess of approximately 5 1012 ions=cm², where the surface is completely covered by ion tracks, synchrotron small angle x-ray scattering measurements reveal the existence of a steady state of density fluctuations. In agreement with molecular dynamics simulations, this steady state is consistent with an ion track “annihilation” process, where high-density regions generated in the periphery of new tracks fill in low-density regions located at the center of existing tracks.application/pdfengJournal of applied physics. Vol. 110, no. 12 (Dec. 2011), 123520, 5 p.Física da matéria condensadaSemicondutores amorfosEfeitos de feixe iônicoDinâmica molecularSincrotronsCompostos de silícioOuroNanoscale density fluctuations in swift heavy ion irradiated amorphous SiO2Estrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSTEXT000829563.pdf.txt000829563.pdf.txtExtracted Texttext/plain24997http://www.lume.ufrgs.br/bitstream/10183/206613/2/000829563.pdf.txt7c6d362c0f49370158f45cf074bd056eMD52ORIGINAL000829563.pdfTexto completo (inglês)application/pdf1571455http://www.lume.ufrgs.br/bitstream/10183/206613/1/000829563.pdff08950b213076036adffbc98cef497fbMD5110183/2066132023-07-12 03:34:26.372086oai:www.lume.ufrgs.br:10183/206613Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2023-07-12T06:34:26Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Nanoscale density fluctuations in swift heavy ion irradiated amorphous SiO2
title Nanoscale density fluctuations in swift heavy ion irradiated amorphous SiO2
spellingShingle Nanoscale density fluctuations in swift heavy ion irradiated amorphous SiO2
Kluth, Patrick
Física da matéria condensada
Semicondutores amorfos
Efeitos de feixe iônico
Dinâmica molecular
Sincrotrons
Compostos de silício
Ouro
title_short Nanoscale density fluctuations in swift heavy ion irradiated amorphous SiO2
title_full Nanoscale density fluctuations in swift heavy ion irradiated amorphous SiO2
title_fullStr Nanoscale density fluctuations in swift heavy ion irradiated amorphous SiO2
title_full_unstemmed Nanoscale density fluctuations in swift heavy ion irradiated amorphous SiO2
title_sort Nanoscale density fluctuations in swift heavy ion irradiated amorphous SiO2
author Kluth, Patrick
author_facet Kluth, Patrick
Pakarinen, O. H.
Djurabekova, F.
Giulian, Raquel
Ridgway, M.C.
Byrne, A. P.
Nordlund, K.
author_role author
author2 Pakarinen, O. H.
Djurabekova, F.
Giulian, Raquel
Ridgway, M.C.
Byrne, A. P.
Nordlund, K.
author2_role author
author
author
author
author
author
dc.contributor.author.fl_str_mv Kluth, Patrick
Pakarinen, O. H.
Djurabekova, F.
Giulian, Raquel
Ridgway, M.C.
Byrne, A. P.
Nordlund, K.
dc.subject.por.fl_str_mv Física da matéria condensada
Semicondutores amorfos
Efeitos de feixe iônico
Dinâmica molecular
Sincrotrons
Compostos de silício
Ouro
topic Física da matéria condensada
Semicondutores amorfos
Efeitos de feixe iônico
Dinâmica molecular
Sincrotrons
Compostos de silício
Ouro
description We report on the observation of nanoscale density fluctuations in 2 μm thick amorphous SiO2 layers irradiated with 185 MeV Au ions. At high fluences, in excess of approximately 5 1012 ions=cm², where the surface is completely covered by ion tracks, synchrotron small angle x-ray scattering measurements reveal the existence of a steady state of density fluctuations. In agreement with molecular dynamics simulations, this steady state is consistent with an ion track “annihilation” process, where high-density regions generated in the periphery of new tracks fill in low-density regions located at the center of existing tracks.
publishDate 2011
dc.date.issued.fl_str_mv 2011
dc.date.accessioned.fl_str_mv 2020-03-11T04:16:52Z
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/206613
dc.identifier.issn.pt_BR.fl_str_mv 0021-8979
dc.identifier.nrb.pt_BR.fl_str_mv 000829563
identifier_str_mv 0021-8979
000829563
url http://hdl.handle.net/10183/206613
dc.language.iso.fl_str_mv eng
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dc.relation.ispartof.pt_BR.fl_str_mv Journal of applied physics. Vol. 110, no. 12 (Dec. 2011), 123520, 5 p.
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reponame_str Repositório Institucional da UFRGS
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