Latent ion tracks in amorphous silicon

Detalhes bibliográficos
Autor(a) principal: Bierschenk, Thomas
Data de Publicação: 2013
Outros Autores: Giulian, Raquel, Afra, Boshra, Rodriguez, M. D., Schauries, Daniel, Mudie, Stephen, Pakarinen, O. H., Djurabekova, F., Nordlund, K., Osmani, O., Medvedev, N., Rethfeld, B., Ridgway, M.C., Kluth, Patrick
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/104567
Resumo: We present experimental evidence for the formation of ion tracks in amorphous Si induced by swift heavy-ion irradiation. An underlying core-shell structure consistent with remnants of a high-density liquid structure was revealed by small-angle x-ray scattering and molecular dynamics simulations. Ion track dimensions differ for as-implanted and relaxed Si as attributed to differentmicrostructures andmelting temperatures. The identification and characterization of ion tracks in amorphous Si yields new insight into mechanisms of damage formation due to swift heavy-ion irradiation in amorphous semiconductors.
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spelling Bierschenk, ThomasGiulian, RaquelAfra, BoshraRodriguez, M. D.Schauries, DanielMudie, StephenPakarinen, O. H.Djurabekova, F.Nordlund, K.Osmani, O.Medvedev, N.Rethfeld, B.Ridgway, M.C.Kluth, Patrick2014-10-15T02:12:42Z20131098-0121http://hdl.handle.net/10183/104567000906992We present experimental evidence for the formation of ion tracks in amorphous Si induced by swift heavy-ion irradiation. An underlying core-shell structure consistent with remnants of a high-density liquid structure was revealed by small-angle x-ray scattering and molecular dynamics simulations. Ion track dimensions differ for as-implanted and relaxed Si as attributed to differentmicrostructures andmelting temperatures. The identification and characterization of ion tracks in amorphous Si yields new insight into mechanisms of damage formation due to swift heavy-ion irradiation in amorphous semiconductors.application/pdfengPhysical review. B, Condensed matter and materials physics. Woodbury. Vol. 88, no. 17 (Nov. 2013), 174111, 5 p.Dinâmica molecularEfeitos de radiaçãoMicroestrutura cristalinaSemicondutores amorfosSemicondutores elementaresSilícioLatent ion tracks in amorphous siliconEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000906992.pdf000906992.pdfTexto completo (inglês)application/pdf597499http://www.lume.ufrgs.br/bitstream/10183/104567/1/000906992.pdf9ac16257ab6682cf4a063aac432ac600MD51TEXT000906992.pdf.txt000906992.pdf.txtExtracted Texttext/plain27601http://www.lume.ufrgs.br/bitstream/10183/104567/2/000906992.pdf.txt603a611da0f673b45a33ccee23a15c36MD52THUMBNAIL000906992.pdf.jpg000906992.pdf.jpgGenerated Thumbnailimage/jpeg2139http://www.lume.ufrgs.br/bitstream/10183/104567/3/000906992.pdf.jpgccf3a7f0c26d16dccfd1d564bb2d8f37MD5310183/1045672023-07-12 03:35:19.104845oai:www.lume.ufrgs.br:10183/104567Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2023-07-12T06:35:19Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Latent ion tracks in amorphous silicon
title Latent ion tracks in amorphous silicon
spellingShingle Latent ion tracks in amorphous silicon
Bierschenk, Thomas
Dinâmica molecular
Efeitos de radiação
Microestrutura cristalina
Semicondutores amorfos
Semicondutores elementares
Silício
title_short Latent ion tracks in amorphous silicon
title_full Latent ion tracks in amorphous silicon
title_fullStr Latent ion tracks in amorphous silicon
title_full_unstemmed Latent ion tracks in amorphous silicon
title_sort Latent ion tracks in amorphous silicon
author Bierschenk, Thomas
author_facet Bierschenk, Thomas
Giulian, Raquel
Afra, Boshra
Rodriguez, M. D.
Schauries, Daniel
Mudie, Stephen
Pakarinen, O. H.
Djurabekova, F.
Nordlund, K.
Osmani, O.
Medvedev, N.
Rethfeld, B.
Ridgway, M.C.
Kluth, Patrick
author_role author
author2 Giulian, Raquel
Afra, Boshra
Rodriguez, M. D.
Schauries, Daniel
Mudie, Stephen
Pakarinen, O. H.
Djurabekova, F.
Nordlund, K.
Osmani, O.
Medvedev, N.
Rethfeld, B.
Ridgway, M.C.
Kluth, Patrick
author2_role author
author
author
author
author
author
author
author
author
author
author
author
author
dc.contributor.author.fl_str_mv Bierschenk, Thomas
Giulian, Raquel
Afra, Boshra
Rodriguez, M. D.
Schauries, Daniel
Mudie, Stephen
Pakarinen, O. H.
Djurabekova, F.
Nordlund, K.
Osmani, O.
Medvedev, N.
Rethfeld, B.
Ridgway, M.C.
Kluth, Patrick
dc.subject.por.fl_str_mv Dinâmica molecular
Efeitos de radiação
Microestrutura cristalina
Semicondutores amorfos
Semicondutores elementares
Silício
topic Dinâmica molecular
Efeitos de radiação
Microestrutura cristalina
Semicondutores amorfos
Semicondutores elementares
Silício
description We present experimental evidence for the formation of ion tracks in amorphous Si induced by swift heavy-ion irradiation. An underlying core-shell structure consistent with remnants of a high-density liquid structure was revealed by small-angle x-ray scattering and molecular dynamics simulations. Ion track dimensions differ for as-implanted and relaxed Si as attributed to differentmicrostructures andmelting temperatures. The identification and characterization of ion tracks in amorphous Si yields new insight into mechanisms of damage formation due to swift heavy-ion irradiation in amorphous semiconductors.
publishDate 2013
dc.date.issued.fl_str_mv 2013
dc.date.accessioned.fl_str_mv 2014-10-15T02:12:42Z
dc.type.driver.fl_str_mv Estrangeiro
info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/104567
dc.identifier.issn.pt_BR.fl_str_mv 1098-0121
dc.identifier.nrb.pt_BR.fl_str_mv 000906992
identifier_str_mv 1098-0121
000906992
url http://hdl.handle.net/10183/104567
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Physical review. B, Condensed matter and materials physics. Woodbury. Vol. 88, no. 17 (Nov. 2013), 174111, 5 p.
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
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