Electrical isolation of p-type GaAs layers by ion irradiation
Autor(a) principal: | |
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Data de Publicação: | 2002 |
Outros Autores: | , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/95818 |
Resumo: | The electrical isolation of p-type GaAs layers doped with acceptor impurities incorporated in the Ga sublattice (Mg) or As sublattice (C) was studied using proton bombardment. It was found that practically the same proton dose is required to reach complete isolation (isolation threshold dose, Dth) in layers doped with either Mg or C of comparable original sheet hole concentration (ps). This result is evidence that the sublattice where the acceptor dopant atoms are incorporated does not play any significant role for the isolation formation process in GaAs. The behavior of the recovery of the conductivity during subsequent thermal annealing was found very similar in Mg and C doped samples irradiated to equal proton doses. In samples irradiated to doses <Dth, the sheet resistance (Rs) increases during annealing at temperatures >100°C, reaches a maximum at ~≈200°C, and then decreases progressively toward the original value. For proton doses ranging from Dth to 5Dth , the isolation is preserved up to the temperature of ~≈500°C. The temperature of ~≈700°C was found to be the upper limit for the thermal stability of the isolation in samples irradiated to doses of 100 Dth. |
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Boudinov, Henri IvanovCoelho, Artur Vicente PfeiferSouza, Joel Pereira de2014-05-31T02:06:40Z20020021-8979http://hdl.handle.net/10183/95818000323332The electrical isolation of p-type GaAs layers doped with acceptor impurities incorporated in the Ga sublattice (Mg) or As sublattice (C) was studied using proton bombardment. It was found that practically the same proton dose is required to reach complete isolation (isolation threshold dose, Dth) in layers doped with either Mg or C of comparable original sheet hole concentration (ps). This result is evidence that the sublattice where the acceptor dopant atoms are incorporated does not play any significant role for the isolation formation process in GaAs. The behavior of the recovery of the conductivity during subsequent thermal annealing was found very similar in Mg and C doped samples irradiated to equal proton doses. In samples irradiated to doses <Dth, the sheet resistance (Rs) increases during annealing at temperatures >100°C, reaches a maximum at ~≈200°C, and then decreases progressively toward the original value. For proton doses ranging from Dth to 5Dth , the isolation is preserved up to the temperature of ~≈500°C. The temperature of ~≈700°C was found to be the upper limit for the thermal stability of the isolation in samples irradiated to doses of 100 Dth.application/pdfengJournal of applied physics. Melville. Vol. 91, no. 10 (May 2002), p. 6585-6587CarbonoCondutividade elétricaArseneto de galioSemicondutores iii-vMagnésioCondutividadeElectrical isolation of p-type GaAs layers by ion irradiationEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000323332.pdf000323332.pdfTexto completo (inglês)application/pdf202361http://www.lume.ufrgs.br/bitstream/10183/95818/1/000323332.pdf98531ef2052a8a37bdce5b11cba71e7fMD51TEXT000323332.pdf.txt000323332.pdf.txtExtracted Texttext/plain17063http://www.lume.ufrgs.br/bitstream/10183/95818/2/000323332.pdf.txtf2cd402e598e4c951fa6c464f17fe818MD52THUMBNAIL000323332.pdf.jpg000323332.pdf.jpgGenerated Thumbnailimage/jpeg1554http://www.lume.ufrgs.br/bitstream/10183/95818/3/000323332.pdf.jpg588fad5a768422c955ebc3b8c2fc918cMD5310183/958182018-10-15 08:20:29.599oai:www.lume.ufrgs.br:10183/95818Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2018-10-15T11:20:29Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Electrical isolation of p-type GaAs layers by ion irradiation |
title |
Electrical isolation of p-type GaAs layers by ion irradiation |
spellingShingle |
Electrical isolation of p-type GaAs layers by ion irradiation Boudinov, Henri Ivanov Carbono Condutividade elétrica Arseneto de galio Semicondutores iii-v Magnésio Condutividade |
title_short |
Electrical isolation of p-type GaAs layers by ion irradiation |
title_full |
Electrical isolation of p-type GaAs layers by ion irradiation |
title_fullStr |
Electrical isolation of p-type GaAs layers by ion irradiation |
title_full_unstemmed |
Electrical isolation of p-type GaAs layers by ion irradiation |
title_sort |
Electrical isolation of p-type GaAs layers by ion irradiation |
author |
Boudinov, Henri Ivanov |
author_facet |
Boudinov, Henri Ivanov Coelho, Artur Vicente Pfeifer Souza, Joel Pereira de |
author_role |
author |
author2 |
Coelho, Artur Vicente Pfeifer Souza, Joel Pereira de |
author2_role |
author author |
dc.contributor.author.fl_str_mv |
Boudinov, Henri Ivanov Coelho, Artur Vicente Pfeifer Souza, Joel Pereira de |
dc.subject.por.fl_str_mv |
Carbono Condutividade elétrica Arseneto de galio Semicondutores iii-v Magnésio Condutividade |
topic |
Carbono Condutividade elétrica Arseneto de galio Semicondutores iii-v Magnésio Condutividade |
description |
The electrical isolation of p-type GaAs layers doped with acceptor impurities incorporated in the Ga sublattice (Mg) or As sublattice (C) was studied using proton bombardment. It was found that practically the same proton dose is required to reach complete isolation (isolation threshold dose, Dth) in layers doped with either Mg or C of comparable original sheet hole concentration (ps). This result is evidence that the sublattice where the acceptor dopant atoms are incorporated does not play any significant role for the isolation formation process in GaAs. The behavior of the recovery of the conductivity during subsequent thermal annealing was found very similar in Mg and C doped samples irradiated to equal proton doses. In samples irradiated to doses <Dth, the sheet resistance (Rs) increases during annealing at temperatures >100°C, reaches a maximum at ~≈200°C, and then decreases progressively toward the original value. For proton doses ranging from Dth to 5Dth , the isolation is preserved up to the temperature of ~≈500°C. The temperature of ~≈700°C was found to be the upper limit for the thermal stability of the isolation in samples irradiated to doses of 100 Dth. |
publishDate |
2002 |
dc.date.issued.fl_str_mv |
2002 |
dc.date.accessioned.fl_str_mv |
2014-05-31T02:06:40Z |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
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info:eu-repo/semantics/publishedVersion |
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article |
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http://hdl.handle.net/10183/95818 |
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0021-8979 |
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000323332 |
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http://hdl.handle.net/10183/95818 |
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eng |
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eng |
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Journal of applied physics. Melville. Vol. 91, no. 10 (May 2002), p. 6585-6587 |
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openAccess |
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