Ultrafast trapping times in ion implanted InP

Detalhes bibliográficos
Autor(a) principal: Carmody, Christine
Data de Publicação: 2002
Outros Autores: Boudinov, Henri Ivanov, Tan, Hoe H., Jagadish, Chenupati, Lederer, Max J., Koley, Vesselin, Luther-Davies, B., Dao, L.V., Gal, Michael
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/95824
Resumo: As+ and P+ implantation was performed on semi-insulating (SI) and p-type InP samples for the purpose of creating a material suitable for ultrafast optoelectronic applications. SI InP samples were implanted with a dose of 1x1016 cm-² and p-type InP was implanted with doses between 1x1012 and 1x1016 cm-². Subsequently, rapid thermal annealing at temperatures between 400 and 700°C was performed for 30 sec. Hall-effect measurements, double-crystal x-ray diffraction, and time-resolved femtosecond differential reflectivity showed that, for the highest-annealing temperatures, the implanted SI InP samples exhibited high mobility, low resistivity, short response times, and minimal structural damage. Similar measurements on implanted p-type InP showed that the fast response time, high mobility, and good structural recovery could be retained while increasing the resistivity.
id UFRGS-2_32630c00fb707f37e42df9a511241115
oai_identifier_str oai:www.lume.ufrgs.br:10183/95824
network_acronym_str UFRGS-2
network_name_str Repositório Institucional da UFRGS
repository_id_str
spelling Carmody, ChristineBoudinov, Henri IvanovTan, Hoe H.Jagadish, ChenupatiLederer, Max J.Koley, VesselinLuther-Davies, B.Dao, L.V.Gal, Michael2014-05-31T02:06:43Z20020021-8979http://hdl.handle.net/10183/95824000334504As+ and P+ implantation was performed on semi-insulating (SI) and p-type InP samples for the purpose of creating a material suitable for ultrafast optoelectronic applications. SI InP samples were implanted with a dose of 1x1016 cm-² and p-type InP was implanted with doses between 1x1012 and 1x1016 cm-². Subsequently, rapid thermal annealing at temperatures between 400 and 700°C was performed for 30 sec. Hall-effect measurements, double-crystal x-ray diffraction, and time-resolved femtosecond differential reflectivity showed that, for the highest-annealing temperatures, the implanted SI InP samples exhibited high mobility, low resistivity, short response times, and minimal structural damage. Similar measurements on implanted p-type InP showed that the fast response time, high mobility, and good structural recovery could be retained while increasing the resistivity.application/pdfengJournal of applied physics. Melville. Vol. 92, no. 5 (Sept. 2002), p. 2420-2423Mobilidade de portadoresResistividade elétricaEfeito hallSemicondutores iii-vCompostos de indioImplantação de íonsRecozimento térmico rápidoRefletividadeEspectros de evolução no tempoDifração de raios XUltrafast trapping times in ion implanted InPEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000334504.pdf000334504.pdfTexto completo (inglês)application/pdf223983http://www.lume.ufrgs.br/bitstream/10183/95824/1/000334504.pdfe09f3b2dd3a25175eb023a00632ba612MD51TEXT000334504.pdf.txt000334504.pdf.txtExtracted Texttext/plain18007http://www.lume.ufrgs.br/bitstream/10183/95824/2/000334504.pdf.txte6b1c1763c1c78b74df893fb864ec46dMD52THUMBNAIL000334504.pdf.jpg000334504.pdf.jpgGenerated Thumbnailimage/jpeg1595http://www.lume.ufrgs.br/bitstream/10183/95824/3/000334504.pdf.jpg66684a502fba869a839699d7a8996f7bMD5310183/958242022-02-22 04:45:44.515821oai:www.lume.ufrgs.br:10183/95824Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2022-02-22T07:45:44Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Ultrafast trapping times in ion implanted InP
title Ultrafast trapping times in ion implanted InP
spellingShingle Ultrafast trapping times in ion implanted InP
Carmody, Christine
Mobilidade de portadores
Resistividade elétrica
Efeito hall
Semicondutores iii-v
Compostos de indio
Implantação de íons
Recozimento térmico rápido
Refletividade
Espectros de evolução no tempo
Difração de raios X
title_short Ultrafast trapping times in ion implanted InP
title_full Ultrafast trapping times in ion implanted InP
title_fullStr Ultrafast trapping times in ion implanted InP
title_full_unstemmed Ultrafast trapping times in ion implanted InP
title_sort Ultrafast trapping times in ion implanted InP
author Carmody, Christine
author_facet Carmody, Christine
Boudinov, Henri Ivanov
Tan, Hoe H.
Jagadish, Chenupati
Lederer, Max J.
Koley, Vesselin
Luther-Davies, B.
Dao, L.V.
Gal, Michael
author_role author
author2 Boudinov, Henri Ivanov
Tan, Hoe H.
Jagadish, Chenupati
Lederer, Max J.
Koley, Vesselin
Luther-Davies, B.
Dao, L.V.
Gal, Michael
author2_role author
author
author
author
author
author
author
author
dc.contributor.author.fl_str_mv Carmody, Christine
Boudinov, Henri Ivanov
Tan, Hoe H.
Jagadish, Chenupati
Lederer, Max J.
Koley, Vesselin
Luther-Davies, B.
Dao, L.V.
Gal, Michael
dc.subject.por.fl_str_mv Mobilidade de portadores
Resistividade elétrica
Efeito hall
Semicondutores iii-v
Compostos de indio
Implantação de íons
Recozimento térmico rápido
Refletividade
Espectros de evolução no tempo
Difração de raios X
topic Mobilidade de portadores
Resistividade elétrica
Efeito hall
Semicondutores iii-v
Compostos de indio
Implantação de íons
Recozimento térmico rápido
Refletividade
Espectros de evolução no tempo
Difração de raios X
description As+ and P+ implantation was performed on semi-insulating (SI) and p-type InP samples for the purpose of creating a material suitable for ultrafast optoelectronic applications. SI InP samples were implanted with a dose of 1x1016 cm-² and p-type InP was implanted with doses between 1x1012 and 1x1016 cm-². Subsequently, rapid thermal annealing at temperatures between 400 and 700°C was performed for 30 sec. Hall-effect measurements, double-crystal x-ray diffraction, and time-resolved femtosecond differential reflectivity showed that, for the highest-annealing temperatures, the implanted SI InP samples exhibited high mobility, low resistivity, short response times, and minimal structural damage. Similar measurements on implanted p-type InP showed that the fast response time, high mobility, and good structural recovery could be retained while increasing the resistivity.
publishDate 2002
dc.date.issued.fl_str_mv 2002
dc.date.accessioned.fl_str_mv 2014-05-31T02:06:43Z
dc.type.driver.fl_str_mv Estrangeiro
info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/95824
dc.identifier.issn.pt_BR.fl_str_mv 0021-8979
dc.identifier.nrb.pt_BR.fl_str_mv 000334504
identifier_str_mv 0021-8979
000334504
url http://hdl.handle.net/10183/95824
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Journal of applied physics. Melville. Vol. 92, no. 5 (Sept. 2002), p. 2420-2423
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFRGS
instname:Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
instname_str Universidade Federal do Rio Grande do Sul (UFRGS)
instacron_str UFRGS
institution UFRGS
reponame_str Repositório Institucional da UFRGS
collection Repositório Institucional da UFRGS
bitstream.url.fl_str_mv http://www.lume.ufrgs.br/bitstream/10183/95824/1/000334504.pdf
http://www.lume.ufrgs.br/bitstream/10183/95824/2/000334504.pdf.txt
http://www.lume.ufrgs.br/bitstream/10183/95824/3/000334504.pdf.jpg
bitstream.checksum.fl_str_mv e09f3b2dd3a25175eb023a00632ba612
e6b1c1763c1c78b74df893fb864ec46d
66684a502fba869a839699d7a8996f7b
bitstream.checksumAlgorithm.fl_str_mv MD5
MD5
MD5
repository.name.fl_str_mv Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)
repository.mail.fl_str_mv
_version_ 1801224835269918720

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