Electrical isolation of n-type and p-type InP layers by proton bombardment

Detalhes bibliográficos
Autor(a) principal: Boudinov, Henri Ivanov
Data de Publicação: 2001
Outros Autores: Tan, Hoe H., Jagadish, Chenupati
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/95816
Resumo: The evolution of the sheet resistance (Rs) of n-type and p-type conductive InP layers during proton irradiation and the stability of the formed isolation during postirradiation annealing were investigated. It was found that the threshold dose (Dth) to convert the conductive layer to a highly resistive one is different for n- and p-type samples with similar initial free carrier concentrations. From our results, one infers that the antisite defects and/or related defect complexes formed by the replacement collisions are the carrier trapping centers, where InP is responsible for electron trapping and PIn for the hole trapping. A time dependence of the Rs was observed after each irradiation step to doses of -≈ Dth and higher. This time variation is related to metastable processes involving free carriers. The thermal stability of the isolation of n-type samples is limited to temperatures lower than 200 °C, irrespectively of the irradiated dose. For p-type samples the thermal stability of electrical isolation is extended to 450–500 °C.
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spelling Boudinov, Henri IvanovTan, Hoe H.Jagadish, Chenupati2014-05-31T02:06:39Z20010021-8979http://hdl.handle.net/10183/95816000292204The evolution of the sheet resistance (Rs) of n-type and p-type conductive InP layers during proton irradiation and the stability of the formed isolation during postirradiation annealing were investigated. It was found that the threshold dose (Dth) to convert the conductive layer to a highly resistive one is different for n- and p-type samples with similar initial free carrier concentrations. From our results, one infers that the antisite defects and/or related defect complexes formed by the replacement collisions are the carrier trapping centers, where InP is responsible for electron trapping and PIn for the hole trapping. A time dependence of the Rs was observed after each irradiation step to doses of -≈ Dth and higher. This time variation is related to metastable processes involving free carriers. The thermal stability of the isolation of n-type samples is limited to temperatures lower than 200 °C, irrespectively of the irradiated dose. For p-type samples the thermal stability of electrical isolation is extended to 450–500 °C.application/pdfengJournal of applied physics. Melville. Vol. 89, no. 10 (May 2001), p. 5343-5347RecozimentoDefeitos anti-sítioDensidade de portadoresResistividade elétricaSemicondutores iii-vCompostos de indioEstabilidade térmicaElectrical isolation of n-type and p-type InP layers by proton bombardmentEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000292204.pdf000292204.pdfTexto completo (inglês)application/pdf229065http://www.lume.ufrgs.br/bitstream/10183/95816/1/000292204.pdf2c39e1745f24ba0a99fb2f69ee44c4a0MD51TEXT000292204.pdf.txt000292204.pdf.txtExtracted Texttext/plain24266http://www.lume.ufrgs.br/bitstream/10183/95816/2/000292204.pdf.txt5c277d112c94f873b6b76b4e6a3d9bd9MD52THUMBNAIL000292204.pdf.jpg000292204.pdf.jpgGenerated Thumbnailimage/jpeg1560http://www.lume.ufrgs.br/bitstream/10183/95816/3/000292204.pdf.jpg4bf815fcf761c4e2166ef86ed3ab75d9MD5310183/958162018-10-15 08:18:13.255oai:www.lume.ufrgs.br:10183/95816Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2018-10-15T11:18:13Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Electrical isolation of n-type and p-type InP layers by proton bombardment
title Electrical isolation of n-type and p-type InP layers by proton bombardment
spellingShingle Electrical isolation of n-type and p-type InP layers by proton bombardment
Boudinov, Henri Ivanov
Recozimento
Defeitos anti-sítio
Densidade de portadores
Resistividade elétrica
Semicondutores iii-v
Compostos de indio
Estabilidade térmica
title_short Electrical isolation of n-type and p-type InP layers by proton bombardment
title_full Electrical isolation of n-type and p-type InP layers by proton bombardment
title_fullStr Electrical isolation of n-type and p-type InP layers by proton bombardment
title_full_unstemmed Electrical isolation of n-type and p-type InP layers by proton bombardment
title_sort Electrical isolation of n-type and p-type InP layers by proton bombardment
author Boudinov, Henri Ivanov
author_facet Boudinov, Henri Ivanov
Tan, Hoe H.
Jagadish, Chenupati
author_role author
author2 Tan, Hoe H.
Jagadish, Chenupati
author2_role author
author
dc.contributor.author.fl_str_mv Boudinov, Henri Ivanov
Tan, Hoe H.
Jagadish, Chenupati
dc.subject.por.fl_str_mv Recozimento
Defeitos anti-sítio
Densidade de portadores
Resistividade elétrica
Semicondutores iii-v
Compostos de indio
Estabilidade térmica
topic Recozimento
Defeitos anti-sítio
Densidade de portadores
Resistividade elétrica
Semicondutores iii-v
Compostos de indio
Estabilidade térmica
description The evolution of the sheet resistance (Rs) of n-type and p-type conductive InP layers during proton irradiation and the stability of the formed isolation during postirradiation annealing were investigated. It was found that the threshold dose (Dth) to convert the conductive layer to a highly resistive one is different for n- and p-type samples with similar initial free carrier concentrations. From our results, one infers that the antisite defects and/or related defect complexes formed by the replacement collisions are the carrier trapping centers, where InP is responsible for electron trapping and PIn for the hole trapping. A time dependence of the Rs was observed after each irradiation step to doses of -≈ Dth and higher. This time variation is related to metastable processes involving free carriers. The thermal stability of the isolation of n-type samples is limited to temperatures lower than 200 °C, irrespectively of the irradiated dose. For p-type samples the thermal stability of electrical isolation is extended to 450–500 °C.
publishDate 2001
dc.date.issued.fl_str_mv 2001
dc.date.accessioned.fl_str_mv 2014-05-31T02:06:39Z
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/95816
dc.identifier.issn.pt_BR.fl_str_mv 0021-8979
dc.identifier.nrb.pt_BR.fl_str_mv 000292204
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dc.language.iso.fl_str_mv eng
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dc.relation.ispartof.pt_BR.fl_str_mv Journal of applied physics. Melville. Vol. 89, no. 10 (May 2001), p. 5343-5347
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