A compact model of MOSFET mismatch for circuit design

Detalhes bibliográficos
Autor(a) principal: Montoro, Carlos Galup
Data de Publicação: 2005
Outros Autores: Schneider, Marcio Cherem, Klimach, Hamilton Duarte, Arnaud, Alfredo
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/27580
Resumo: This paper presents a compact model for MOS transistor mismatch. The mismatch model uses the carrier number fluctuation theory to account for the effects of local doping fluctuations along with an accurate and compact dc MOSFET model. The resulting matching model is valid for any operation condition, from weak to strong inversion, from the linear to the saturation region, and allows the assessment of mismatch from process and geometric parameters. Experimental results from a set of transistors integrated on a 0.35 m technology confirm the accuracy of our mismatch model under various bias conditions.
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spelling Montoro, Carlos GalupSchneider, Marcio CheremKlimach, Hamilton DuarteArnaud, Alfredo2011-01-28T05:59:10Z20050018-9200http://hdl.handle.net/10183/27580000510147This paper presents a compact model for MOS transistor mismatch. The mismatch model uses the carrier number fluctuation theory to account for the effects of local doping fluctuations along with an accurate and compact dc MOSFET model. The resulting matching model is valid for any operation condition, from weak to strong inversion, from the linear to the saturation region, and allows the assessment of mismatch from process and geometric parameters. Experimental results from a set of transistors integrated on a 0.35 m technology confirm the accuracy of our mismatch model under various bias conditions.application/pdfengIEEE journal of solid-state circuits. New York, N. Y. vol. 40, no. 8 (Aug. 2005), p. 1649-1657Circuitos eletrônicosMicroeletrônicaMOSFETAnalog designMatchingMismatchCompact modelsA compact model of MOSFET mismatch for circuit designEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000510147.pdf000510147.pdfTexto completo (inglês)application/pdf571410http://www.lume.ufrgs.br/bitstream/10183/27580/1/000510147.pdfe9da63593a82ba0dfd5bc7f4670eb0e6MD51TEXT000510147.pdf.txt000510147.pdf.txtExtracted Texttext/plain44102http://www.lume.ufrgs.br/bitstream/10183/27580/2/000510147.pdf.txt5c1da2d30d404e64b10655528dc364c3MD52THUMBNAIL000510147.pdf.jpg000510147.pdf.jpgGenerated Thumbnailimage/jpeg2193http://www.lume.ufrgs.br/bitstream/10183/27580/3/000510147.pdf.jpg32ba384a03058febf466197c115e8d68MD5310183/275802021-06-13 04:34:25.951686oai:www.lume.ufrgs.br:10183/27580Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2021-06-13T07:34:25Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv A compact model of MOSFET mismatch for circuit design
title A compact model of MOSFET mismatch for circuit design
spellingShingle A compact model of MOSFET mismatch for circuit design
Montoro, Carlos Galup
Circuitos eletrônicos
Microeletrônica
MOSFET
Analog design
Matching
Mismatch
Compact models
title_short A compact model of MOSFET mismatch for circuit design
title_full A compact model of MOSFET mismatch for circuit design
title_fullStr A compact model of MOSFET mismatch for circuit design
title_full_unstemmed A compact model of MOSFET mismatch for circuit design
title_sort A compact model of MOSFET mismatch for circuit design
author Montoro, Carlos Galup
author_facet Montoro, Carlos Galup
Schneider, Marcio Cherem
Klimach, Hamilton Duarte
Arnaud, Alfredo
author_role author
author2 Schneider, Marcio Cherem
Klimach, Hamilton Duarte
Arnaud, Alfredo
author2_role author
author
author
dc.contributor.author.fl_str_mv Montoro, Carlos Galup
Schneider, Marcio Cherem
Klimach, Hamilton Duarte
Arnaud, Alfredo
dc.subject.por.fl_str_mv Circuitos eletrônicos
Microeletrônica
topic Circuitos eletrônicos
Microeletrônica
MOSFET
Analog design
Matching
Mismatch
Compact models
dc.subject.eng.fl_str_mv MOSFET
Analog design
Matching
Mismatch
Compact models
description This paper presents a compact model for MOS transistor mismatch. The mismatch model uses the carrier number fluctuation theory to account for the effects of local doping fluctuations along with an accurate and compact dc MOSFET model. The resulting matching model is valid for any operation condition, from weak to strong inversion, from the linear to the saturation region, and allows the assessment of mismatch from process and geometric parameters. Experimental results from a set of transistors integrated on a 0.35 m technology confirm the accuracy of our mismatch model under various bias conditions.
publishDate 2005
dc.date.issued.fl_str_mv 2005
dc.date.accessioned.fl_str_mv 2011-01-28T05:59:10Z
dc.type.driver.fl_str_mv Estrangeiro
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dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
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status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/27580
dc.identifier.issn.pt_BR.fl_str_mv 0018-9200
dc.identifier.nrb.pt_BR.fl_str_mv 000510147
identifier_str_mv 0018-9200
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url http://hdl.handle.net/10183/27580
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv IEEE journal of solid-state circuits. New York, N. Y. vol. 40, no. 8 (Aug. 2005), p. 1649-1657
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
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