Unraveling the mechanisms responsible for the interfacial region formation in 4H-SiC dry thermal oxidation

Detalhes bibliográficos
Autor(a) principal: Dartora, Gustavo Henrique Stedile
Data de Publicação: 2017
Outros Autores: Pitthan Filho, Eduardo, Stedile, Fernanda Chiarello
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/187943
Resumo: Aiming to understand the processes involved in the formation of the transition region between SiO2 and SiC, known as the interfacial region, early steps of SiC oxidation were investigated using mainly nuclear reaction analyses. Oxidation kinetics reveals that an abrupt change in the oxidation mechanism is observed in C-face oxide films when their thickness is around 10 nm, while a continuous change in the oxidation mechanism is observed in Si-face oxide films with thicknesses up to about 4 nm. This last thickness corresponds to the maximum width of the interfacial region. Changes observed in the oxidation mechanism were related to oxidation reaction and interfacial atom emission that may take place during oxide film growth. Besides, the activation energies of such processes were obtained.
id UFRGS-2_4b3a40765c53e4b40453084935beed8f
oai_identifier_str oai:www.lume.ufrgs.br:10183/187943
network_acronym_str UFRGS-2
network_name_str Repositório Institucional da UFRGS
repository_id_str
spelling Dartora, Gustavo Henrique StedilePitthan Filho, EduardoStedile, Fernanda Chiarello2019-01-19T02:34:02Z20170021-8979http://hdl.handle.net/10183/187943001072428Aiming to understand the processes involved in the formation of the transition region between SiO2 and SiC, known as the interfacial region, early steps of SiC oxidation were investigated using mainly nuclear reaction analyses. Oxidation kinetics reveals that an abrupt change in the oxidation mechanism is observed in C-face oxide films when their thickness is around 10 nm, while a continuous change in the oxidation mechanism is observed in Si-face oxide films with thicknesses up to about 4 nm. This last thickness corresponds to the maximum width of the interfacial region. Changes observed in the oxidation mechanism were related to oxidation reaction and interfacial atom emission that may take place during oxide film growth. Besides, the activation energies of such processes were obtained.application/pdfengJournal of applied physics. New York. Vol. 122, no. 21 (Dec. 2017), 215301, 6 p.Oxidação térmicaCarboneto de silícioCapacitores MOSUnraveling the mechanisms responsible for the interfacial region formation in 4H-SiC dry thermal oxidationEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSTEXT001072428.pdf.txt001072428.pdf.txtExtracted Texttext/plain31997http://www.lume.ufrgs.br/bitstream/10183/187943/2/001072428.pdf.txt9d19363f30ef292a63d0d0852508ad3aMD52ORIGINAL001072428.pdfTexto completo (inglês)application/pdf2611517http://www.lume.ufrgs.br/bitstream/10183/187943/1/001072428.pdf119e3573b2aa2a60009b5c5afcf11381MD5110183/1879432019-01-20 02:32:03.052479oai:www.lume.ufrgs.br:10183/187943Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2019-01-20T04:32:03Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Unraveling the mechanisms responsible for the interfacial region formation in 4H-SiC dry thermal oxidation
title Unraveling the mechanisms responsible for the interfacial region formation in 4H-SiC dry thermal oxidation
spellingShingle Unraveling the mechanisms responsible for the interfacial region formation in 4H-SiC dry thermal oxidation
Dartora, Gustavo Henrique Stedile
Oxidação térmica
Carboneto de silício
Capacitores MOS
title_short Unraveling the mechanisms responsible for the interfacial region formation in 4H-SiC dry thermal oxidation
title_full Unraveling the mechanisms responsible for the interfacial region formation in 4H-SiC dry thermal oxidation
title_fullStr Unraveling the mechanisms responsible for the interfacial region formation in 4H-SiC dry thermal oxidation
title_full_unstemmed Unraveling the mechanisms responsible for the interfacial region formation in 4H-SiC dry thermal oxidation
title_sort Unraveling the mechanisms responsible for the interfacial region formation in 4H-SiC dry thermal oxidation
author Dartora, Gustavo Henrique Stedile
author_facet Dartora, Gustavo Henrique Stedile
Pitthan Filho, Eduardo
Stedile, Fernanda Chiarello
author_role author
author2 Pitthan Filho, Eduardo
Stedile, Fernanda Chiarello
author2_role author
author
dc.contributor.author.fl_str_mv Dartora, Gustavo Henrique Stedile
Pitthan Filho, Eduardo
Stedile, Fernanda Chiarello
dc.subject.por.fl_str_mv Oxidação térmica
Carboneto de silício
Capacitores MOS
topic Oxidação térmica
Carboneto de silício
Capacitores MOS
description Aiming to understand the processes involved in the formation of the transition region between SiO2 and SiC, known as the interfacial region, early steps of SiC oxidation were investigated using mainly nuclear reaction analyses. Oxidation kinetics reveals that an abrupt change in the oxidation mechanism is observed in C-face oxide films when their thickness is around 10 nm, while a continuous change in the oxidation mechanism is observed in Si-face oxide films with thicknesses up to about 4 nm. This last thickness corresponds to the maximum width of the interfacial region. Changes observed in the oxidation mechanism were related to oxidation reaction and interfacial atom emission that may take place during oxide film growth. Besides, the activation energies of such processes were obtained.
publishDate 2017
dc.date.issued.fl_str_mv 2017
dc.date.accessioned.fl_str_mv 2019-01-19T02:34:02Z
dc.type.driver.fl_str_mv Estrangeiro
info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/187943
dc.identifier.issn.pt_BR.fl_str_mv 0021-8979
dc.identifier.nrb.pt_BR.fl_str_mv 001072428
identifier_str_mv 0021-8979
001072428
url http://hdl.handle.net/10183/187943
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Journal of applied physics. New York. Vol. 122, no. 21 (Dec. 2017), 215301, 6 p.
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFRGS
instname:Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
instname_str Universidade Federal do Rio Grande do Sul (UFRGS)
instacron_str UFRGS
institution UFRGS
reponame_str Repositório Institucional da UFRGS
collection Repositório Institucional da UFRGS
bitstream.url.fl_str_mv http://www.lume.ufrgs.br/bitstream/10183/187943/2/001072428.pdf.txt
http://www.lume.ufrgs.br/bitstream/10183/187943/1/001072428.pdf
bitstream.checksum.fl_str_mv 9d19363f30ef292a63d0d0852508ad3a
119e3573b2aa2a60009b5c5afcf11381
bitstream.checksumAlgorithm.fl_str_mv MD5
MD5
repository.name.fl_str_mv Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)
repository.mail.fl_str_mv
_version_ 1815447679455461376

Registros relacionados