Influence of thermal growth parameters on the SiO2/4H-SiC interfacial region

Detalhes bibliográficos
Autor(a) principal: Pitthan Filho, Eduardo
Data de Publicação: 2013
Outros Autores: Lopes, L. D., Palmieri, Rodrigo, Corrêa, Silma Alberton, Soares, Gabriel Vieira, Boudinov, Henri Ivanov, Stedile, Fernanda Chiarello
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/140170
Resumo: In order to elucidate the origin of SiC electrical degradation from thermal oxidation, 4H-SiC substrates were thermally oxidized under different conditions of time and pressure. Results from nuclear reaction analyses were correlated to those from electrical measurements. Although the increase in the flatband voltage shift and in the film thickness were related to the oxidation parameters, the results exclude the thickness of the SiO2/4H-SiC interfacial region and the amount of residual oxygen compounds present on the SiC surface as the main cause of the electrical degradation from the SiC oxidation.
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spelling Pitthan Filho, EduardoLopes, L. D.Palmieri, RodrigoCorrêa, Silma AlbertonSoares, Gabriel VieiraBoudinov, Henri IvanovStedile, Fernanda Chiarello2016-05-04T02:07:45Z20132166-532Xhttp://hdl.handle.net/10183/140170000913265In order to elucidate the origin of SiC electrical degradation from thermal oxidation, 4H-SiC substrates were thermally oxidized under different conditions of time and pressure. Results from nuclear reaction analyses were correlated to those from electrical measurements. Although the increase in the flatband voltage shift and in the film thickness were related to the oxidation parameters, the results exclude the thickness of the SiO2/4H-SiC interfacial region and the amount of residual oxygen compounds present on the SiC surface as the main cause of the electrical degradation from the SiC oxidation.application/pdfengAPL Materials. New York. Vol. 1, no. 2 (Aug. 2013), p. 022101-022107Carboneto de silícioOxidação térmicaInfluence of thermal growth parameters on the SiO2/4H-SiC interfacial regionEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000913265.pdf000913265.pdfTexto completo (inglês)application/pdf1252267http://www.lume.ufrgs.br/bitstream/10183/140170/1/000913265.pdf69218fcfcb3f2060a7254b07bc8034c2MD51TEXT000913265.pdf.txt000913265.pdf.txtExtracted Texttext/plain25045http://www.lume.ufrgs.br/bitstream/10183/140170/2/000913265.pdf.txt4465804bc3aeac68074db0130f62c88cMD52THUMBNAIL000913265.pdf.jpg000913265.pdf.jpgGenerated Thumbnailimage/jpeg2163http://www.lume.ufrgs.br/bitstream/10183/140170/3/000913265.pdf.jpg859de0c00dc621628d64df239ea0cf2eMD5310183/1401702023-05-18 03:55:46.543925oai:www.lume.ufrgs.br:10183/140170Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2023-05-18T06:55:46Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Influence of thermal growth parameters on the SiO2/4H-SiC interfacial region
title Influence of thermal growth parameters on the SiO2/4H-SiC interfacial region
spellingShingle Influence of thermal growth parameters on the SiO2/4H-SiC interfacial region
Pitthan Filho, Eduardo
Carboneto de silício
Oxidação térmica
title_short Influence of thermal growth parameters on the SiO2/4H-SiC interfacial region
title_full Influence of thermal growth parameters on the SiO2/4H-SiC interfacial region
title_fullStr Influence of thermal growth parameters on the SiO2/4H-SiC interfacial region
title_full_unstemmed Influence of thermal growth parameters on the SiO2/4H-SiC interfacial region
title_sort Influence of thermal growth parameters on the SiO2/4H-SiC interfacial region
author Pitthan Filho, Eduardo
author_facet Pitthan Filho, Eduardo
Lopes, L. D.
Palmieri, Rodrigo
Corrêa, Silma Alberton
Soares, Gabriel Vieira
Boudinov, Henri Ivanov
Stedile, Fernanda Chiarello
author_role author
author2 Lopes, L. D.
Palmieri, Rodrigo
Corrêa, Silma Alberton
Soares, Gabriel Vieira
Boudinov, Henri Ivanov
Stedile, Fernanda Chiarello
author2_role author
author
author
author
author
author
dc.contributor.author.fl_str_mv Pitthan Filho, Eduardo
Lopes, L. D.
Palmieri, Rodrigo
Corrêa, Silma Alberton
Soares, Gabriel Vieira
Boudinov, Henri Ivanov
Stedile, Fernanda Chiarello
dc.subject.por.fl_str_mv Carboneto de silício
Oxidação térmica
topic Carboneto de silício
Oxidação térmica
description In order to elucidate the origin of SiC electrical degradation from thermal oxidation, 4H-SiC substrates were thermally oxidized under different conditions of time and pressure. Results from nuclear reaction analyses were correlated to those from electrical measurements. Although the increase in the flatband voltage shift and in the film thickness were related to the oxidation parameters, the results exclude the thickness of the SiO2/4H-SiC interfacial region and the amount of residual oxygen compounds present on the SiC surface as the main cause of the electrical degradation from the SiC oxidation.
publishDate 2013
dc.date.issued.fl_str_mv 2013
dc.date.accessioned.fl_str_mv 2016-05-04T02:07:45Z
dc.type.driver.fl_str_mv Estrangeiro
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/140170
dc.identifier.issn.pt_BR.fl_str_mv 2166-532X
dc.identifier.nrb.pt_BR.fl_str_mv 000913265
identifier_str_mv 2166-532X
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dc.language.iso.fl_str_mv eng
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dc.relation.ispartof.pt_BR.fl_str_mv APL Materials. New York. Vol. 1, no. 2 (Aug. 2013), p. 022101-022107
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